Rapid thermal processing lamp and method for manufacturing the same

• US 7,285,758 B2
• Filed: 12/12/2001
• Issued: 10/23/2007
• Est. Priority Date: 12/12/2000
• Status: Expired due to Fees

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: Johnson, Wayne L.
• Primary Examiner(s): Pelham; Joseph M.
• Application Number:
  US10/450,154
• Publication Number:
  US 20040099651A1
• Time in Patent Office: 2,141 Days
• Field of Search: 219/411, 219/390, 219/405, 219/634, 219/635, 392/416, 392/418, 118/724, 118/725, 118/50.1, 315/57, 315/62, 315/248, 315/267, 313/344, 313/156, 313/157, 313/158
• US Class Current: 219/411
• CPC Class Codes: F27B 17/0025 Especially adapted for treating semiconductor wafers
• CPC Class Codes: H01L 21/67115 mainly by radiation
• CPC Class Codes: H05B 3/0047 for semiconductor manufacture
• CPC Class Codes: H05B 6/105 using a susceptor

Abstract

A method and system for inductively coupling energy to a heating filament (7A′, 7B′, 7C′, 7A, 7B, 7C) in a thermal processing environment. By applying AC power to a coil antenna (11) and inductive coupling to a filament (e.g., a halogen lamp filament), a number of connections that are subject to fatigue is reduced, thereby increasing the reliability of the heater (2A, 2B). Such an environment can be used to process semiconductor wafers (3) and liquid crystal displays.

Claims

1. A thermal processing equipment for heating a substrate, comprising:

plural inductively coupled filaments including first and second inductively coupled filaments configured to heat the substrate via radiant heating while separated from the substrate by a gap and not physically connected to a power source; and

at least one induction coil configured to inductively heat the first and second inductively coupled filaments.

2. The thermal processing equipment according to claim 1, wherein the substrate comprises a semiconductor wafer.

3. The thermal processing equipment according to claim 1, wherein the substrate comprises a liquid crystal display panel.

4. The thermal processing equipment according to claim 1, further comprising:

plural AC power sources configured to selectively power the first and second inductively coupled filaments separately.

5. The thermal processing equipment according to claim 4, further comprising:

an outer metal enclosure and a Faraday shield configured to block energy from one of the plural AC power sources from being coupled to the first inductively coupled filament while configured to allow the energy from the one of the plural AC power sources to be coupled to the second inductively coupled filament.

6. The thermal processing equipment according to claim 1, further comprising:

plural cavities, between first and second isolation plates, configured to receive the plural inductively coupled filaments.

7. The thermal processing equipment according to claim 1, wherein the first inductively coupled filament comprises a tungsten filament.

8. The thermal processing equipment according to claim 1, wherein the first inductively coupled filament comprises a tungsten alloy filament.

9. The thermal processing equipment according to claim 1, wherein the at least one induction coil comprises plural induction coils including first and second induction coils, and the first and second induction coils are separated by an isolation feature so that the first and second induction coils independently and selectively heat the first and second inductively coupled filaments, respectively.

10. The thermal processing equipment according to claim 1, wherein the plural inductively coupled filaments are positioned to radiate only on one side of the substrate.

11. The thermal processing equipment according to claim 1, wherein the first inductively coupled filament is positioned to radiate on one side of the substrate, and the second inductively coupled filament is positioned to radiate on another side of the substrate.

12. The thermal processing equipment according to claim 1, further comprising:

a shield provided with slots and positioned between the plural inductively coupled filaments and the at least one induction coil.

13. The thermal processing equipment according to claim 6, wherein one of the first and second isolation plates positioned between the plural inductively coupled filaments and the at least one induction coil is configured to be a shield which keeps excessive heat generated by the plural inductively coupled filaments from reaching the at least one induction coil, while permitting the at least one induction coil to inductively heat the plural inductively coupled filaments.

14. The thermal processing equipment according to claim 6, wherein one of the first and second isolation plates positioned between the plural inductively coupled filaments and the substrate is configured to be a vacuum window providing vacuum conditions for heating the substrate.

15. The thermal processing equipment according to claim 6, wherein the plural cavities are provided with spacers to separate the plural inductively coupled filaments.

16. A thermal processing equipment for heating a substrate, comprising:

a first inductively coupled filament configured to heat the substrate;

a first cavity, between first and second isolation plates, configured to receive the first inductively coupled filament; and

hairpins configured to support the first inductively coupled filament away from the first and second isolation plates.

17. The thermal processing equipment according to claim 16, wherein the isolation plates comprise quartz plates.

18. The thermal processing equipment according to claim 16, wherein the isolation plates comprise frit bonded quartz plates.

19. The thermal processing equipment according to claim 16, wherein at least one of the isolation plates comprises a machined plate configured to form at least a portion of the first cavity.

20. The thermal processing equipment according to claim 16, wherein the cavity comprises an anti-darkening agent.

21. The thermal processing equipment according to claim 20, wherein the anti-darkening agent comprises iodine.

22. The thermal processing equipment according to claim 20, wherein the anti-darkening agent comprises bromine.

23. The thermal processing equipment according to claim 20, wherein the anti-darkening agent comprises a halogen gas.

24. The thermal processing equipment according to claim 16, further comprising:

a clamp configured to clamp the isolation plates together.

25. A thermal processing equipment for heating a substrate, comprising:

first and second heating means for heating the substrate via radiant heating while separated from the substrate by a gap;

coupling means for inductively coupling power to the first and second heating means in order to heat the heating means; and

means for reflecting at least one of a light and a heat towards the substrate.

26. The thermal processing equipment according to claim 25, further comprising:

AC power supplying means for supplying power to the coupling means, said first and second heating means are not physically connected to said AC power supplying means nor to said coupling means.

27. The thermal processing equipment according to claim 25, wherein the substrate comprises at least one of a semiconductor wafer and a liquid crystal display panel.

28. The thermal processing equipment according to claim 25, further comprising:

AC power supplying means for selectively powering the first heating means and the second heating means separately.