Organic light emitting diode display and fabrication method thereof

• US 7,285,918 B2
• Filed: 04/21/2005
• Issued: 10/23/2007
• Est. Priority Date: 06/17/2004
• Status: Active Grant

• Current Assignee: AU Optronics Corporation
• Original Assignee: AU Optronics Corporation
• Inventors: Chang, Yi-Cheng
• Primary Examiner(s): Dinh; Trinh Vo
• Application Number:
  US11/111,286
• Publication Number:
  US 20050280373A1
• Time in Patent Office: 915 Days
• Field of Search: 3151692-1694
• US Class Current: 315/169.3
• CPC Class Codes: H10K 50/87 Arrangements for heating or cooling
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays
• CPC Class Codes: H10K 59/8794 Arrangements for heating and cooling

Abstract

Organic light emitting diode (OLED) displays and fabrication methods thereof are provided. The OLED display comprises a substrate having a display area and a peripheral area. An array of pixels is disposed in the display area. Column and row control circuits are disposed in the peripheral area. At least one thermal dissipation element is disposed in the peripheral area connecting each pixel.

Claims

1. An organic light emitting diode (OLED) display, comprising:

a substrate having a display area and a peripheral area;

a pixel array disposed in the display area;

a column and a row control circuits disposed in the peripheral area;

at least one thermal dissipation element disposed in the peripheral area and connected to the pixel array; and

a thermal conductive element connected to the at least one thermal dissipation element,

wherein the pixel array comprises;

an array of thin film transistors; and

an array of organic light emitting diodes, each comprising an electrode connected to the thermal conductive element;

wherein the column circuit and the row control circuit are directly disposed on the substrate.

2. The OLED display as claimed in claim 1, wherein the pixel array is an active matrix OLED array.

3. The OLED display as claimed in claim 1, wherein the coefficient of thermal dissipation element is equal to or larger than 50 W/mK.

4. The OLED display as claimed in claim 1, wherein the at least one thermal dissipation element comprises metal.

5. The OLED display as claimed in claim 4, wherein the at least one thermal dissipation element comprises Al, Al—

Cu alloy, Mg, Mg—

Ag alloy, or a combination thereof.

6. The OLED display as claimed in claim 1, further comprising a thermal dissipation medium substantially covering the thermal dissipation element.

7. The OLED display as claimed in claim 1, further comprising a frame contacting the thermal dissipation element.

8. The OLED display as claimed in claim 1, further comprising a frame connected to the thermal dissipation element.

9. The OLED display as claimed in claim 1,

wherein the thermal dissipation element and the column or the row control circuit are not directly connected.

10. An organic light emitting diode (OLED) display, comprising:

a substrate having a display area and a peripheral area;

a pixel array disposed in the display area;

a column and a row control circuits disposed in the peripheral area;

at least one thermal dissipation element disposed in the peripheral area and connected to the pixel array; and

a thermal conductive element connected to the at least one thermal dissipation element, wherein the pixel array comprises;

an array of thin film transistors; and

an array of organic light emitting diodes, each comprising a first electrode, an organic light emitting layer disposed on the first electrode, and a second electrode disposed on the organic light emitting layer and connected to the thermal conductive element;

wherein the column circuit and the row control circuit are directly disposed on the substrate.

11. A method for fabricating an OLED display, comprising:

providing a substrate having a display area and a peripheral area;

forming an array of active devices in the display area;

disposing a column and a row control circuits in the peripheral area;

forming a plurality of thermal dissipation elements in the peripheral area;

forming an array of OLEDs on the substrate corresponding to each active device and connected to the at least one of the plurality of thermal dissipation elements; and

forming a thermal conductive element connected to the at least one thermal dissipation element, wherein each OLED of the array of OLEDs comprises an electrode connected to the thermal conductive element;

wherein the column circuit and the row control circuit are directly disposed on the substrate.

12. The method as claimed in claim 11, wherein the array of active devices is an array of thin film transistors.

13. The method as claimed in claim 11, wherein the coefficient of the thermal dissipation element is equal to or larger than 50 W/mK.

14. The method as claimed in claim 11, wherein forming the array of OLEDs and forming the plurality of thermal conductive elements are performed simultaneously.

15. The method as claimed in claim 11, further comprising forming a thermal dissipation medium covering the thermal dissipation elements.

16. The method as claimed in claim 11, further comprising forming a frame contacting the thermal dissipation elements.

17. The method as claimed in claim 11, wherein forming the array of OLEDs and forming the plurality of thermal dissipation elements are performed simultaneously.