Low basal plane dislocation bulk grown SiC wafers

  • US 7,294,324 B2
  • Filed: 06/08/2005
  • Issued: 11/13/2007
  • Est. Priority Date: 09/21/2004
  • Status: Active Grant
First Claim
Patent Images

1. A high quality single crystal wafer of SiC having a diameter of at least about 3 inches and at least one continuous square inch of surface area that has a basal plane dislocation density less than about 500 cm

  • 2.

View all claims
    ×
    ×

    Thank you for your feedback

    ×
    ×