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Low basal plane dislocation bulk grown SiC wafers

DC
  • US 7,294,324 B2
  • Filed: 06/08/2005
  • Issued: 11/13/2007
  • Est. Priority Date: 09/21/2004
  • Status: Active Grant
First Claim
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1. A high quality single crystal wafer of SiC having a diameter of at least about 3 inches and at least one continuous square inch of surface area that has a basal plane dislocation density less than about 500 cm

  • 2.

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