Wiring structure to minimize stress induced void formation

• US 7,301,239 B2
• Filed: 07/26/2004
• Issued: 11/27/2007
• Est. Priority Date: 07/26/2004
• Status: Expired due to Fees

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Wang, Chien-Jung, Chen, Hsueh-Chung, Hu, Ding-Da, Fan, Su-Chen
• Primary Examiner(s): Baumeister; B. William
• Assistant Examiner(s): Fulk; Steven J.
• Application Number:
  US10/899,252
• Publication Number:
  US 20060019414A1
• Time in Patent Office: 1,219 Days
• Field of Search: 438/927, 438/466, 438/468, 438/18, 438/637, 438/622, 257/767, 257/48, 257/E29.112
• US Class Current: 257/767
• CPC Class Codes: G01R 31/2853 Electrical testing of internal connections or -isolation, e.g. latch-up or chip-to-lead connections G01R31/31717 takes precedence; test of chip-to-PCB or lead-to-PCB connections G01R31/66
• CPC Class Codes: H01L 22/34 Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line switching, multiplexing, gating devices G01R19/25; process control with lithography, e.g. dose control, G03F7/20; structures for alignment control by optical means G03F7/70633
• CPC Class Codes: H01L 23/528 Geometry or layout of the interconnection structure H01L27/0207 takes precedence; algorithms G06F30/00
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A wiring structure with improved resistance to void formation and a method of making the same are described. The wiring structure has a first conducting layer that includes a large area portion which is connected to an end of a protrusion with a plurality of “n” overlapping segments and at least one bending portion. The other end of the protrusion is connected to the bottom of a via which has an overlying second conducting layer. A bend is formed by overlapping the ends of two adjacent segments at an angle between 45° and 135°. The protrusion may also include at least one extension at a segment end beyond a bend. A bending portion and extension are used as bottlenecks to delay the diffusion of a vacancy from the large area portion to the vicinity of the via and is especially effective for copper interconnects or in a via test structure.

Claims

1. A wiring structure connecting a metal feature having a length, width, and thickness to a via, comprising:

a single conducting layer comprising plurality of “

n”

overlapping segments each comprised of two ends and having a width, a length, and a thickness wherein one end of a first segment is connected to the metal feature and one end of the nth segment is connected to the via and wherein an end of a segment and an end of an adjacent segment form a bend at an angle θ and

a plurality of segments form at least one bending portion, and wherein the width of each of the plurality of segments forming the at least one bending portion is less than the width of the first segment.

2. The wiring structure of claim 1 wherein the metal feature, “

n”

overlapping segments, and via are comprised of copper.

3. The wiring structure of claim 1 wherein the first segment is fanned along a first axis and the nth segment is formed along the first axis or along an axis that is parallel to the first axis and the bending portion is not aligned along the first axis.

4. The wiring structure of claim 1 wherein the width of a segment is less than the width or length of the metal feature.

5. The wiring structure of claim 1 wherein the combined length of the “

n”

segments is greater than about 10 microns.

6. The wiring structure of claim 1 wherein the angle θ

is between about 45° and

135°

.

7. The wiring structure of claim 1 further comprising at least one extension formed on one end of a segment and substantially aligned along the same axis as formed by the two ends of the segment.

8. An interconnect, comprising:

(a) a first conducting layer including a large area portion having a first width, a first length, and a first thickness, the first conducting layer further including elongated protrusion having a second width and length, first thickness, and two ends, wherein one end is connected to the large area portion and the other end is connected to a via and said protrusion is comprised of at least one bending portion, and wherein the protrusion has a substantially uniform width throughout its length and extends over the via;

(b) the via being connected at a first end to the protrusion in the first conducting layer and at a second end to a second conducting; and

(c) the at least one bending portion comprising two or more intersecting subportions, wherein at least one extension extends beyond an intersection of said two or more intersection subportions.

9. The interconnect structure of claim 8 wherein said protrusion is comprised of a plurality of “

n”

overlapping segments and a bending portion that includes a plurality of segments in which an end of one segment and an end of an adjacent segment overlap to form a bend at an angle θ

.

10. The interconnect structure of claim 9 wherein the angle θ

is between about 45° and

135°

.

11. The interconnect structure of claim 8 wherein the bending portion has the shape of an arc.

12. The interconnect structure of claim 8 wherein the first conducting layer, second conducting layer, protrusion, and the via are comprised of a metal.

13. The interconnect structure of claim 12 wherein said metal is copper.

14. The interconnect structure of claim 8 wherein the first thickness of the first conducting layer is between about 0.2 and 1 microns, the height of the via is about 0.2 to 1 microns, and wherein the second conducting layer has a thickness of about 0.2 to 1 microns.

15. The interconnect structure of claim 9 wherein the combined length of the “

n”

segments in the protrusion is greater than about 10 microns and the second width of a segment is between about 0.1 and 10 microns.

16. The interconnect structure of claim 9 wherein the first segment is formed along a first axis and the nth segment is formed along the first axis or along an axis that is parallel to the first axis.

17. The interconnect structure of claim 9 wherein the via is formed on the “

nth”

segment at a distance of about 0.1 and 10 microns from the end of the nth segment that does not overlap with the (n−

1)th segment.

18. The interconnect structure of claim 9 wherein the width of said via is less than the second width of said nth segment and the height of the via is between about 0.2 and 10 microns.

19. The interconnect structure of claim 9 further comprised of at least one extension at the end of a segment adjacent to a bend.

20. The interconnect structure of claim 19 wherein said extension has a second width, a length of about 0.01 to 1 microns, a first thickness, and is comprised of the same conducting material as in the first conducting layer.

21. A wiring structure connecting a metal feature having a length, width, and thickness to a via, comprising:

a single conducting layer comprising plurality of “

n”

overlapping segments each comprised of two ends and having a width, a length, and a thickness wherein one end of a first segment is connected to the metal feature and one end of the nth segment is connected to the via and wherein an end of a segment and an end of an adjacent segment form a bend at an angle θ and

a plurality of segments form at least one bending portion, the at least one bending portion comprising two or more intersecting subsegments, wherein at least one extension extends beyond an intersection of said two or more intersection subsegments and wherein the width of each of the plurality of segments forming the at least one bending portion is less than the width of the first segment.

22. The wiring structure of claim 21 wherein the metal feature, “

n”

overlapping segments, and via are comprised of copper.

23. The wiring structure of claim 21 wherein the first segment is formed along a first axis and the rub segment is formed along the first axis or along an axis that is parallel to the first axis and the bending portion is not aligned along the first axis.

24. The wiring structure of claim 21 wherein the width of a segment is less than the width or length of the metal feature.

25. The wiring structure of claim 21 wherein the combined length of the “

N”

segments is greater than about 10 microns.

26. The wiring structure of claim 21 wherein the angle θ

is between about 45° and

135°

.

27. An interconnect, comprising:

(a) a first conducting layer including a large area portion having a first width, a first length, and a first thickness, the first conducting layer further including an elongated protrusion having a second width and length, first thickness, and two ends, wherein one end is connected to the large area portion and the other end is connected to a via and said protrusion is comprised of at least one bending portion that includes a plurality of segments in which an end of one segment and an end of an adjacent segment overlap to form a bend at an angle θ

, and wherein a third width of each of the plurality of segments making up the at least one bending portion is less than the second width and wherein the protrusion extends over the via; and

(b) the via being connected at a first end to the protrusion in the first conducting layer and at a second end to a second conducting.

28. The interconnect structure of claim 27 wherein said protrusion is comprised of a plurality of “

n”

overlapping segments.

29. The interconnect structure of claim 27 wherein the angle θ

is between about 45° and

135°

.

30. The interconnect structure of claim 27 wherein the bending portion has the shape of an arc.

31. The interconnect structure of claim 27 wherein the first conducting layer, second conducting layer, protrusion, and the via are comprised of a metal.

32. The interconnect structure of claim 31 wherein said metal is copper.

33. The interconnect structure of claim 27 wherein the first thickness of the first conducting layer is between about 0.2 and 1 microns, the height of the via is about 0.2 to 1 microns, and wherein the second conducting layer has a thickness of about 0.2 to 1 microns.

34. The interconnect structure of claim 28 wherein the combined length of the “

n”

segments in the protrusion is greater than about 10 microns and the second width of a segment is between about 0.1 and 10 microns.

35. The interconnect structure of claim 28 wherein a first segment of said plurality of segments is formed along a first axis and the nth segment is formed along the first axis or along an axis that is parallel to the first axis.

36. The interconnect structure of claim 28 wherein the via is formed on the “

nth”

segment at a distance of about 0.1 and 10 microns from the end of the nth segment that does not overlap with the (n−

1)th segment.

37. The interconnect structure of claim 28 wherein the width of said via is less than the second width of said nth segment and the height of the via is between about 0.2 and 10 microns.

38. The interconnect structure of claim 27 further comprising:

at least one extension extending beyond said overlapping portion between said end of one segment and said end of said adjacent segment.