High frequency switch device

• US 7,307,490 B2
• Filed: 10/05/2004
• Issued: 12/11/2007
• Est. Priority Date: 10/09/2003
• Status: Active Grant

• Current Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.), Mitsubishi Denki Kabushiki Kaisha (Mitsubishi Electric Corporation)
• Original Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.), Mitsubishi Denki Kabushiki Kaisha (Mitsubishi Electric Corporation)
• Inventors: Somei, Junichi, Tanino, Noriyuki, Kizuki, Hirotaka
• Primary Examiner(s): TAKAOKA, DEAN O
• Application Number:
  US10/957,651
• Publication Number:
  US 20050077978A1
• Time in Patent Office: 1,162 Days
• Field of Search: 333/101, 333/103, 333/262
• US Class Current: 333/101
• CPC Class Codes: H01P 1/15 by semiconductor devices
• CPC Class Codes: H03K 17/693 Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors logic circuits H03K19/00; code converters H03M5/00, H03M7/00

Abstract

A high frequency switch device has SPDT(A), SPDT(B), and SPDT(C) switches, each having one pole and a first port and a second port, wherein the second port of the SPDT(A) is grounded via a terminating resistor and the second port of the SPDT(B) is grounded via a terminating resistor, respectively, and the first port of the SPDT(A) and the first port of the SPDT(B) are respectively connected to the first port and the second port of the SPDT(C).

Claims

1. A high frequency switch structure comprising first, second, third, and fourth input terminals and first and second high frequency switch devices, wherein

the first high-frequency switch device includes

first, second, third, fourth, fifth, sixth, and seventh single pole-double throw-switches, each of the first, second, third, fourth, fifth, sixth, and seventh SPDT switches having one pole, a first port, and a second port, wherein

the second ports of the first second, fourth, and fifth SPDT switches are respectively grounded via respective first, second, third, and fourth terminating resistors, each terminating resistor having predetermined impedance,

the first port of the third SPDT switch is connected to the first port of the first SPDT switch,

the second port of the third SPDT switch is connected to the first port of the second SPDT switch,

the first port of the sixth SPDT switch is connected to the first port of the fourth SPDT switch,

the second port of the sixth SPDT switch is connected to the first port of the fifth SPDT switch,

the first port of the seventh SPDT switch is directly connected to the pole of the third SPDT switch, and

the second port of the seventh SPDT switch is directly connected to the pole of the sixth SPDT switch;

the second high-frequency switch device includes

eighth, ninth, tenth, eleventh, twelfth, thirteenth, and fourteenth single pole-double throw switches, each of the eighth, ninth, tenth, eleventh, twelfth, thirteenth, and fourteenth SPDT switches having one pole, a first port, and a second port, wherein

the second ports of the eighth, ninth, eleventh, and twelfth SPDT switches are respectively grounded via respective fifth, sixth, seventh, and eighth terminating resistors, each terminating resistor having predetermined impedance,

the first port of the tenth SPDT switch is connected to the first port of the eighth SPDT switch,

the second port of the tenth SPDT switch is connected to the first port of the ninth SPDT switch,

the first port of the thirteenth SPDT switch is connected to the first port of the eleventh SPDT switch,

the second port of the thirteenth SPDT switch is connected to the first port of the twelfth SPDT switch,

the first port of the fourteenth SPDT switch is directly connected to the pole of the tenth SPDT switch, and

the second port of the fourteenth SPDT switch is directly connected to the pole of the thirteenth SPDT switch;

the poles of the first and eighth SPDT switches are directly connected to the first input terminal;

the poles of the second and ninth SPDT switches are directly connected to the second input terminal;

the poles of the fourth and eleventh SPDT switches are directly connected to the third input terminal; and

the poles of the fifth and twelfth SPDT are directly connected to the fourth input terminal.

2. A high frequency switch device comprising:

first, second, third, fourth, and fifth single pole-double throw (SPDT) switches, each of the first, second, third, fourth, and fifth SPDT switches having one pole, a first port, and a second port, wherein

the second ports of the first, second, and fourth SPDT switches are respectively grounded via respective first, second, and third terminating resistors, each terminating resistor having predetermined impedance,

the first port of the third SPDT switch is connected to the first port of the first SPDT switch,

the second port of the third SPDT switch is connected to the first port of the second SPDT switch,

the first port of the fifth SPDT switch is directly connected to the pole of the third SPDT switch, and

the second port of the fifth SPDT switch is directly connected to the first port of the fourth SPDT switch.

3. The high frequency switch device according to claim 2, wherein

the first and second SPDT switches include first, second, third, and fourth field effect transistors, respectively, and respectively have configurations wherein

the first and second field effect transistors are connected in series via their sources and drains and the first and second field effect transistors connected in series include first ends corresponding to the poles of the first and second SPDT switches, and second ends corresponding to the first ports of the first and second SPDT switches, and

the third and fourth field effect transistors are connected in parallel to one another via their sources and drains and shunt-connected to the first ends of the first and second field effect transistors connected in series and to ground terminals via the first and second terminating resistors;

the third and fifth SPDT switches respectively include fifth, sixth, seventh, and eighth field effect transistors and each of the third and fifth SPDT switches has a configuration wherein

one of a source or drain of the fifth field effect transistor is the first port of the third and fifth SPDT switches, and the sixth field effect transistor is shunt-connected between the first port of the third and fifth SPDT switches and a ground terminal via a source and drain of the sixth field effect transistor, and

a source or drain of the seventh field effect transistor is the second port of the third and fifth SPDT switches, and the eighth field effect transistor is shunt-connected between the second port of the of the third and fifth SPDT switches and the ground terminal via a source and drain of the eighth field effect transistor, and the sources or drains of the fifth and seventh field effect transistors are the pole of the third and fifth SPDT switches; and

the fourth SPDT switch includes ninth and tenth field effect transistors and has a configuration wherein

one of a source or drain of the ninth field effect transistor is the pole of the fourth SPDT switch and the other of the source and drain is the first port of the fourth SPDT switch, and

the tenth field effect transistor is shunt-connected to the pole of the fourth SPDT switch via a source or drain of the tenth field effect transistor and connected to the ground terminal via the third terminating resistor.

4. The high frequency switch device according to claim 2, wherein

when

logic for causing the pole to be connected to the first port is 1 and logic for causing the pole to be connected to the second port is 0 in the first SPDT switch,

logic for causing the pole to be connected to the first port is 1 and logic for causing the pole to be connected to the second port is 0 in the second SPDT switch,

logic for causing the pole to be connected to the first port connected to the pole of the first SPDT switch is 1 and logic for causing the pole to be connected to the second port connected to the pole of the second SPDT switch is 0 in the third SPDT switch,

logic for causing the pole to be connected to the first port is 1 and logic for causing the pole to be connected to the second port is 0 in the fourth SPDT switch,

logic for causing the pole to be connected to the first port connected to the pole of the third SPDT switch is 1 and logic for causing the pole to be connected to the second port connected to the pole of the fourth SPDT switch is 0 in the fifth SPDT switch, and

logic operations of the first, second, third, fourth, and fifth SPDT switches are respectively set as SPDT1, SPDT2, SPDT3, SPDT4, and SPDT5,

the logic operations are defined as:

SPDT1=SPDT5∩

SPDT3

SPDT2=SPDT5∩

SPDT3

SPDT4= SPDT5.

5. The high frequency switch device according to claim 3, wherein

when

logic for causing the pole to be connected to the first port is 1 and logic for causing the pole to be connected to the second port is 0 in the first SPDT switch,

logic for causing the pole to be connected to the first port is 1 and logic for causing the pole to be connected to the second port is 0 in the second SPDT switch,

logic for causing the pole to be connected to the first port connected to the pole of the first SPDT switch is 1 and logic for causing the pole to be connected to the second port connected to the pole of the second SPDT switch is 0 in the third SPDT switch,

logic for causing the pole to be connected to the first port is 1 and logic for causing the pole to be connected to the second port is 0 in the fourth SPDT switch,

logic for causing the pole to be connected to the first port connected to the pole of the third SPDT switch is 1 and logic for causing the pole to be connected to the second port connected to the pole of the fourth SPDT switch is 0 in the fifth SPDT switch, and

logic operations of the first, second, third, fourth, and fifth SPDT switches are respectively set as SPDT1, SPDT2, SPDT3, SPDT4, and SPDT5,

the logic operations are defined as:

SPDT1=SPDT5∩

SPDT3

SPDT2=SPDT5∩

SPDT3

SPDT4= SPDT5.

6. A high frequency switch structure comprising first and second high frequency switch devices, wherein

the first high-frequency switch device includes

first, second, third, fourth, and fifth single pole-double throw (SPDT) switches, each of the first, second, third, fourth, and fifth SPDT switches having one pole, a first port, and a second port, wherein

the second ports of the first, second, and fourth SPDT switches are respectively grounded via respective first, second, and third terminating resistors, each terminating resistor having predetermined impedance,

the first port of the third SPDT switch is connected to the first port of the first SPDT switch,

the second port of the third SPDT switch is connected to the first port of the second SPDT switch,

the first port of the fifth SPDT switch is directly connected to the pole of the third SPDT switch, and

the second port of the fifth SPDT switch is directly connected to the first port of the fourth SPDT switch;

the second high-frequency switch device includes

sixth, seventh, eighth, ninth, and tenth single pole-double throw switches, each of the sixth, seventh, eighth, ninth, and tenth SPDT switches having one pole, a first port, and a second port,

the second ports of the sixth, seventh, and ninth SPDT switches are respectively grounded via respective fourth, fifth, and sixth terminating resistors, each terminating resistor having predetermined impedance,

the first port of the eighth SPDT switch is connected to the first port of the sixth SPDT switch,

the second pod of the eighth SPDT switch is connected to the first port of the seventh SPDT switch,

the first port of the tenth SPDT switch is directly connected to the pole of the eighth SPDT switch, and

the second port of the tenth SPDT switch is directly connected to the first port of the ninth SPDT switch;

the poles of the first and sixth SPDT switches are directly connected to each other;

the poles of the second and seventh SPDT switches are directly connected to each other; and

the poles of the fourth and ninth SPDT switches are directly connected to each other.