High density MIM capacitor structure and fabrication process

  • US 7,317,221 B2
  • Filed: 12/04/2003
  • Issued: 01/08/2008
  • Est. Priority Date: 12/04/2003
  • Status: Active Grant
First Claim
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1. A stacked integrated circuit (IC) MIM capacitor structure comprising:

  • a first MIM capacitor structure disposed in a first IMD layer comprising a first upper electrode and a first lower electrode; and

    ,at least a second MIM capacitor structure arranged in stacked relationship in an overlying IMD layer comprising a second upper electrode and second lower electrode separate from said first upper and first lower electrodes to form an MIM capacitor stack;

    wherein, the first lower electrode is arranged in common electrical signal communication comprising electrically communicating vias with the second upper electrode and the first upper electrode is arranged in common electrical signal communication with the second lower electrode to form said MIM capacitor stack in parallel electrical relationship;

    wherein the lower electrodes including electrically communicating vias of the respective MIM structures in the MIM capacitor stack comprise a substantially identical structure in alternating IMD layer; and

    wherein the respective upper end lower electrodes comprise a metal selected from the group consisting of Al, Cu, Ta, Ti, and nitrides that comprise silicided nitrides thereof.

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