Monitoring method of processing state and processing unit

• US 7,329,549 B2
• Filed: 09/02/2003
• Issued: 02/12/2008
• Est. Priority Date: 09/02/2002
• Status: Active Grant

• Current Assignee: Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: Saito, Susumu
• Primary Examiner(s): Lebentritt; Michael
• Assistant Examiner(s): Isaac; Stanetta
• Application Number:
  US10/652,852
• Publication Number:
  US 20040197938A1
• Time in Patent Office: 1,624 Days
• Field of Search: 438/5, 438/7, 438/9, 438/11, 438/14, 438/16, 438/17
• US Class Current: 438/9
• CPC Class Codes: H01J 37/32935 Monitoring and controlling tubes by information coming from the object and/or discharge
• CPC Class Codes: H01L 21/31116 by dry-etching

Abstract

The present invention is a monitoring method of monitoring a change of a processing state of an object to be processed when a predetermined process is conducted to the object to be processed by using a processing unit. The method includes: a step of respectively setting constant response variables for two states before and after a processing state changes, the response variables being different from each other; and a step of conducting a multiple regression analysis about the response variables in order to produce a model expression, predictor variables of the multiple regression analysis being a plurality of detected data from a plurality of detectors provided in the processing unit. Then, the method includes: a step of actually obtaining a plurality of detected data from the plurality of detectors when the predetermined process is conducted to the object to be processed; and a step of estimating or monitoring a processing state by applying the obtained plurality of detected data to the model expression.

Claims

1. A monitoring method of monitoring a change of a processing state of an object to be processed when a predetermined etching process is conducted to the object to be processed by using a plasma processing unit, the monitoring method comprising:

a step of respectively setting constant response variables for two states before and after a processing state changes, the response variables being different from each other, the two states being a state in which the etching process is in progress, and a state in which the etching process has been completed;

a step of conducting a multiple regression analysis using a PLS method about the response variables in order to produce a model expression, predictor variables of the multiple regression analysis being a plurality of detected data from a plurality of detectors provided in the processing unit;

a step of actually obtaining a plurality of detected data from the plurality of detectors when the predetermined process is conducted to the object to be processed;

a step of estimating or monitoring a change of a processing state from the in progress state to the completed state of the etching process based on response variables obtained by applying the obtained plurality of detected data to the model expression; and

a step of generating a signal indicative of the estimated or monitored processing state.

2. A method according to claim 1, wherein the processing unit is a plasma processing unit.

3. A method according to claim 2, wherein the plurality of detected data are emission intensities of a plurality of component wavelengths of plasma.

4. A method according to claim 3, wherein the emission intensities of a plurality of component wavelengths of plasma change depending on the two states.

5. A method according to claim 2, wherein the two states are a state on the way of an etching process and a state after a completion of the etching process.