Forming method of liquid crystal layer using ink jet system

• US 7,333,161 B2
• Filed: 10/12/2004
• Issued: 02/19/2008
• Est. Priority Date: 05/29/2001
• Status: Expired due to Term

• Current Assignee: LG Display Co., Ltd.
• Original Assignee: LG Philips LCD Company Limited (LG Display Co., Ltd.)
• Inventors: Chae, Goe-Sung, Hwang, Yong-Sup, Lee, Jae-Kyun
• Primary Examiner(s): Caley; Michael H.
• Application Number:
  US10/961,081
• Publication Number:
  US 20050046784A1
• Time in Patent Office: 1,225 Days
• Field of Search: 349/42, 349/43, 349/139, 349/142, 349/143
• US Class Current: 349/43
• CPC Class Codes: G02F 1/13458 Terminal pads
• CPC Class Codes: G02F 1/1362 Active matrix addressed cells G02F1/134336, G02F1/134363 take precedence
• CPC Class Codes: G02F 1/136213 Storage capacitors associated with the pixel electrode

Abstract

An array substrate includes a substrate, a gate line disposed along a first direction on the substrate, and a common line is parallel to the gate line, the common line being of the same material as the gate line. A gate insulating layer is on the gate and common lines, a semiconductor layer is on the gate insulating layer and a transparent pixel electrode includes a drain electrode portion. The drain electrode portion overlaps the semiconductor. A passivation layer includes a first contact hole and an open portion over the pixel and source electrodes, the first contact hole exposing the source electrode and the open portion exposing the pixel electrode, respectively. A data line is disposed along a second direction on the passivation layer, and the data line connected to the source electrode through the first contact hole and crossing the gate line.

Claims

1. An array substrate of a liquid crystal display device, comprising:

a substrate;

gate line disposed along a first direction on the substrate, the gate line including a storage electrode;

a gate insulating layer on the gate line;

a semiconductor layer on the gate insulating layer, wherein the semiconductor layer includes an active layer of amorphous silicon, an ohmic contact layer of doped amorphous silicon and a metal buffer layer of titanium or chromium;

a pixel electrode of transparent conductive material and overlapping the gate line;

a drain electrode of transparent conductive material and overlapping the semiconductor layer;

a source electrode of transparent conductive material spaced apart from the drain electrode, the source electrode and the drain electrode being a single layer, a portion of the active layer between the source electrode and the drain electrode being exposed;

a passivation layer including a first contact hole and an open portion, the first contact hole exposing the source electrode and the open portion exposing the pixel electrode, respectively; and

a data line disposed along a second direction on the passivation layer, the data line connected to the source electrode through the first contact hole and crossing the gate line,

wherein the source electrode is larger than a portion of the semiconductor layer corresponding to the source electrode so that a portion of the source electrode in the first contact hole is disposed between, and in direct contact with both of, the gate insulating layer and the data line.

2. The array substrate according to claim 1, further comprising a gate link and a gate pad at an end portion of the gate line,

the gate link being made of the same material as the data line and overlapping the gate line and the gate pad,

the gate line being connected to the gate link through a second contact hole in the gate insulating layer and the passivation layer, and

the gate pad being made of the same material as the pixel electrode and connected to the gate link through a third contact hole in the passivation layer.

3. The array substrate according to claim 2, wherein the gate link is wider than the gate pad.

4. The array substrate according to claim 1, further comprising a data pad at an end portion of the data line, the data pad overlapping the data line and being made of the same material as the pixel electrode and connected to the data line through a fourth contact hole.

5. The array substrate according to claim 4, wherein the overlapped data line is wider than the data pad.

6. The array substrate according to claim 1, said pixel electrode overlapping the gate line.

7. The array substrate according to claim 1, wherein the first contact hole is disposed under the data line.

8. The array substrate according to claim 1, wherein the transparent material is indium tin oxide.

9. The array substrate according to claim 1, wherein the passivation layer is made of acrylate resin.

10. The array substrate according to claim 1, wherein the pixel electrode and the drain electrode are an integral, unitary structure, and the pixel electrode, the drain electrode and the source electrode are made of a same material.

11. The array substrate according to claim 1, wherein the metal buffer layer is located between the drain electrode and the ohmic contact layer and between the source electrode and the ohmic contact layer.

12. A fabricating method of an array substrate of a liquid crystal display device, comprising:

forming a gate line disposed along a first direction on a substrate, the gate line including a storage electrode;

forming a gate insulating layer on the gate line;

forming a semiconductor layer on the gate insulating layer by forming an active layer of amorphous silicon, an ohmic contact layer of doped amorphous silicon and a metal buffer layer of titanium or chromium;

forming a source electrode, a drain electrode and a pixel electrode of transparent conductive material, the source electrode spaced apart from the drain electrode, the drain electrode overlapping the semiconductor layer and the pixel electrode overlapping the gate line, respectively, the source electrode and the drain electrode being a single layer, a portion of the active layer between the source electrode and the drain electrode being exposed;

forming a passivation layer including a first contact hole and an open portion, the first contact hole exposing the source electrode and the open portion exposing the pixel electrode, respectively; and

forming a data line disposed along a second direction on the passivation layer, the data line connected to the source electrode through the first contact hole and crossing the gate line,

wherein the source electrode is larger than a portion of the semiconductor layer corresponding to the source electrode so that a portion of the source electrode in the first contact hole is disposed between, and in direct contact with both of, the gate insulating layer and the data line.

13. The method according to claim 12, further comprising:

forming a gate link and a gate pad at an end portion of the gate line, the gate link being made of the same material as the data line and overlapping the gate line and the gate pad, the gate line being connected to the gate link through a second contact hole in the gate insulating layer and the passivation layer, and the gate pad being made of the same material as the pixel electrode and connected to the gate link through a third contact hole in the passivation layer.

14. The method according to claim 13, wherein the gate link is wider than the gate pad.

15. The method according to claim 12, further comprising:

forming a data pad at an end portion of the data line, the data pad overlapping the data line and being made of the same material as the pixel electrode and connected to the data line through a fourth contact hole.

16. The method according to claim 15, wherein the overlapped data line is wider than the data pad.

17. The method according to claim 12, said pixel electrode overlapping the gate line.

18. The method according to claim 12, wherein the first contact hole is disposed under the data line.

19. The method according to claim 12, wherein the transparent material is indium tin oxide.

20. The method according to claim 12, wherein the passivation layer is made of acrylate resin.

21. The method according to claim 12, wherein the step of forming the source electrode, the drain electrode and the pixel electrode includes forming the pixel electrode and the drain electrode as an integral, unitary structure and forming the pixel electrode, the drain electrode and the source electrode of a same material.

22. The method according to claim 12, wherein the metal buffer layer is formed between the drain electrode and the ohmic contact layer and between the source electrode and the ohmic contact layer.