Method for fabricating photodiode of CMOS image sensor

• US 7,354,841 B2
• Filed: 07/06/2005
• Issued: 04/08/2008
• Est. Priority Date: 07/08/2004
• Status: Expired due to Fees

• Current Assignee: DONGBU ELECTRONICS CO., LTD. (DB HiTek Co., Ltd.)
• Original Assignee: DONGBU ELECTRONICS CO., LTD. (DB HiTek Co., Ltd.)
• Inventors: Jeon, In Gyun
• Primary Examiner(s): Lebentritt, Michael
• Assistant Examiner(s): Ullah, Elias
• Application Number:
  US11/176,721
• Publication Number:
  US 20060008940A1
• Time in Patent Office: 1,007 Days
• Field of Search: 438/57, 438/286, 438372-374, 257/E21.135
• US Class Current: 438/374
• CPC Class Codes: H01L 27/14601 Structural or functional details thereof
• CPC Class Codes: H01L 27/14689 MOS based technologies

Abstract

A method for fabricating a photodiode of a CMOS image sensor is disclosed, to improve a charge accumulation capacity in the photodiode, which includes the steps of defining a semiconductor substrate as an active area and a field area by forming an STI layer; firstly implanting impurity ions for formation of the photodiode to the semiconductor substrate of the active area; secondarily implanting impurity ions for formation of the photodiode to the semiconductor substrate being adjacent to the STI layer; and forming a photodiode ion-implantation diffusion layer by diffusing the implanted impurity ions with a thermal process.

Claims

1. A method for fabricating a photodiode of a CMOS image sensor comprising:

defining an active area and a field area in a semiconductor substrate by forming an STI layer;

implanting first impurity ions to form a photodiode ion-implantation layer in the active area;

implanting second impurity ions in regions of the photodiode ion-implantation layer adjacent to sidewalls of the STI layer, the second impurity ions having a conductivity type identical to the first impurity ions; and

forming a single photodiode ion-implantation diffusion layer by diffusing the first and second impurity ions with a thermal process.

2. The method of claim 1, wherein an energy in the process for implanting the first impurity ions is identical to an energy in the process for implanting the second impurity ions.

3. The method of claim 1, wherein the process for implanting the second impurity ions includes:

forming a photoresist exposing a predetermined portion of the active area adjacent to the sidewalls of the STI layer; and

implanting impurity ions into the semiconductor substrate using the photoresist as a mask.

4. The method of claim 3, wherein the predetermined portion of the semiconductor substrate has a width below 0.5 μ

m.

5. The method of claim 3, wherein the photoresist covers a portion of the STI layer.

6. The method of claim 1, wherein implanting the second impurity ions increases an ion density in the regions of the photodiode ion-implantation layer adjacent to the STI layer.

7. The method of claim 1, wherein diffusing the first and second impurity ions bonds the second impurity ions to a field channel stop ion-implantation layer.

8. The method of claim 7, wherein the field channel stop ion-implantation layer is below the STI layer.

9. The method of claim 1, wherein diffusing the first and second impurity ions provides an ion density in the region of the photodiode ion-implantation diffusion layer adjacent to the STI layer that is similar to an ion density in a central portion of the photodiode ion-implantation diffusion layer.