Method of peeling off and method of manufacturing semiconductor device

• US 7,361,573 B2
• Filed: 08/09/2005
• Issued: 04/22/2008
• Est. Priority Date: 08/10/2001
• Status: Expired due to Term

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Takayama, Toru, Maruyama, Junya, Yamazaki, Shunpei
• Primary Examiner(s): LEE, HSIEN MING
• Application Number:
  US11/199,084
• Publication Number:
  US 20050282357A1
• Time in Patent Office: 987 Days
• Field of Search: 438/455, 438/458, 257/E21.568, 257/E21.57
• US Class Current: 438/455
• CPC Class Codes: H01L 21/76251 using bonding techniques
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/1266 the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate

Abstract

The invention aims to provide a peeling method without damaging a peeled off layer and to allow separation of not only a peeled off layer having a small surface area but also the entire surface of a peeled off layer having a large surface area. Further, the invention aims to provide a lightweight semiconductor device by sticking a peeled off layer to a variety of substrates and its manufacturing method. Especially, the invention aims to provide a lightweight semiconductor device by sticking a variety of elements such as TFT to a flexible film and its manufacturing method. Even in the case a first material layer 11 is formed on a substrate and a second material layer 12 is formed adjacently to the foregoing first material layer 11, and further, layered film formation, heating treatment at 500° C. or higher or laser beam radiating treatment is carried out, if the first material layer has a tensile stress before the peeling and the second material layer has a compressive stress, excellent separation can easily be carried out by physical means in the interlayer or interface of the second material layer 12.

Claims

1. A method for peeling comprising the steps of:

forming a multilayer composed of a first material layer over a substrate and a second material layer over the first material layer over the substrate;

heating at 500°

C. or higher the multilayer so that the second material layer has a compressive stress; and

peeling the second material layer from the first material layer and the substrate after the heating step,

wherein the second material layer has the compressive stress in a range of −

1 to −

1×

10¹⁰ Dyne/cm² before the peeling step.

2. The method for peeling according to claim 1, wherein the first material layer comprises metal material.

3. The method for peeling according to claim 1, wherein the first material layer comprises tungsten.

4. The method for peeling according to claim 1, wherein the second material layer comprises silicon.

5. The method for peeling according to claim 1, wherein the peeling step is carried out by physical means.

6. A method for peeling comprising the steps of:

forming a multilayer composed of a first material layer over a substrate and a second material layer over the first material layer over the substrate;

radiating a laser beam to the multilayer so that the second material layer has a compressive stress; and

peeling the second material layer from the first material layer and the substrate after the radiating step,

wherein the second material layer has the compressive stress in a range of −

1 to −

1×

10¹⁰ Dyne/cm² before the peeling step.

7. The method for peeling according to claim 6, wherein the first material layer comprises metal material.

8. The method for peeling according to claim 6, wherein the first material layer comprises tungsten.

9. The method for peeling according to claim 6, wherein the second material layer comprises silicon.

10. The method for peeling according to claim 6, wherein the peeling step is carried out by physical means.

11. A method for peeling comprising the steps of:

forming a multilayer composed of a first material layer over a substrate and a second material layer over the first material layer over the substrate;

forming an underlying insulating layer on the multilayer;

forming a semiconductor layer having an amorphous structure on the underlying insulating layer;

heating the multilayer, the underlying insulating layer and the semiconductor layer so that the second material layer has a compressive stress; and

peeling the second material layer, the underlying insulating layer and the semiconductor layer from the first material layer and the substrate after the heating step,

wherein the second material layer has the compressive stress in a range of −

1 to −

1×

10¹⁰ Dyne/cm² before the peeling step.

12. The method for peeling according to claim 11, wherein the first material layer comprises metal material.

13. The method for peeling according to claim 11, wherein the first material layer comprises tungsten.

14. The method for peeling according to claim 11, wherein the second material layer comprises silicon.

15. The method for peeling according to claim 11, wherein the underlying insulating layer comprises two silicon nitride oxide films.

16. The method for peeling according to claim 11, wherein the peeling step is carried out by physical means.

17. A method for peeling comprising the steps of:

forming a multilayer composed of a first material layer over a substrate and a second material layer over the first material layer over the substrate;

forming an underlying insulating layer on the multilayer;

forming a semiconductor layer having an amorphous structure on the underlying insulating layer;

radiating a laser light to the multilayer, the underlying insulating layer and the semiconductor layer so that the second material layer has a compressive stress; and

peeling the second material layer, the underlying insulating layer and the semiconductor layer from the first material layer and the substrate after the radiating step,

wherein the second material layer has the compressive stress in a range of −

1 to −

1×

10¹⁰ Dyne/cm² before the peeling step.

18. The method for peeling according to claim 17, wherein the first material layer comprises metal material.

19. The method for peeling according to claim 17, wherein the first material layer comprises tungsten.

20. The method for peeling according to claim 17, wherein the second material layer comprises silicon.

21. The method for peeling according to claim 17, wherein the underlying insulating layer comprises two silicon nitride oxide films.

22. The method for peeling according to claim 17, wherein the peeling step is carried out by physical means.

23. A method for peeling comprising the steps of:

forming a multilayer composed of a first material layer over a substrate and a second material layer over the first material layer over the substrate;

heating the multilayer so that the second material layer has a compressive stress;

sticking a supporting body to the multilayer; and

peeling the second material layer and the supporting body from the first material layer and the substrate after the heating step,

wherein the second material layer has the compressive stress in a range of −

1 to −

1×

10¹⁰ Dyne/cm² before the peeling step.

24. The method for peeling according to claim 23, wherein the first material layer comprises metal material.

25. The method for peeling according to claim 23, wherein the first material layer comprises tungsten.

26. The method for peeling according to claim 23, wherein the second material layer comprises silicon.

27. The method for peeling according to claim 23, wherein the peeling step is carried out by physical means.

28. The method for peeling according to claim 23, wherein the supporting body is a film-like plastic substrate.

29. A method for peeling comprising the steps of:

forming a multilayer composed of a first material layer over a substrate and a second material layer over the first material layer over the substrate;

radiating a laser light to the multilayer so that the second material layer has a compressive stress;

sticking a supporting body to the multilayer; and

peeling the second material layer and the supporting body from the first material layer and the substrate after the radiating step,

wherein the second material layer has the compressive stress in a range of −

1 to −

1×

10¹⁰ Dyne/cm² before the peeling step.

30. The method for peeling according to claim 29, wherein the first material layer comprises metal material.

31. The method for peeling according to claim 29, wherein the first material layer comprises tungsten.

32. The method for peeling according to claim 29, wherein the second material layer comprises silicon.

33. The method for peeling according to claim 29, wherein the peeling step is carried out by physical means.

34. The method for peeling according to claim 29, wherein the supporting body is a film-like plastic substrate.