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Optimizing write/erase operations in memory devices

  • US 7,363,421 B2
  • Filed: 01/13/2005
  • Issued: 04/22/2008
  • Est. Priority Date: 01/13/2005
  • Status: Active Grant
First Claim
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1. A method of controlling write/erase operations in a memory device including memory blocks, said blocks being exposed to wear as a result of repeated erasures, the method comprising:

  • arranging the blocks in the memory device in orderly logical positions;

    storing erase counts associated with the memory blocks in a table, entering as an i-th entry in the table a number of erasures performed on a block in an i-th position in the memory device;

    creating a chain storing block numbers and corresponding erase counts for memory blocks that are available for writing at a certain instant of time;

    selecting for writing, out of the blocks of said memory device available for writing, the block having the lowest erase count in said chain; and

    writing data in said block having the lowest erase count in said chain.

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