Device and method for modifying actuation voltage thresholds of a deformable membrane in an interferometric modulator

• US 7,369,296 B2
• Filed: 08/05/2005
• Issued: 05/06/2008
• Est. Priority Date: 09/27/2004
• Status: Expired due to Fees

• Current Assignee: Snaptrack Incorporated (Qualcomm, Inc.)
• Original Assignee: IDC, LLC
• Inventors: Floyd, Philip D.
• Primary Examiner(s): THOMPSON, TIMOTHY J
• Application Number:
  US11/197,885
• Publication Number:
  US 20060077528A1
• Time in Patent Office: 1,005 Days
• Field of Search: 359/290, 359/291, 359/223, 359/224, 359/238, 359/292, 345/107
• US Class Current: 359/290
• CPC Class Codes: G02B 26/001 based on interference in an adjustable optical cavity interference filters G02B5/28; devices or arrangements using multiple reflections in spectrometry or monochromators G01J3/26

Abstract

By varying the spacing between a partially-reflective, partially-transmissive surface and a highly reflective surface positioned behind the partially-reflective, partially-transmissive surface, an interferometric modulator selectively creates constructive and/or destructive interference between light waves reflecting off the two surfaces. The spacing can be varied by applying a voltage to create electrostatic attraction between the two surfaces, which causes one or both surfaces to deform and move closer together. In the absence of such attraction, the surfaces are in a relaxed position, where they are farther apart from one another. A actuation voltage is needed to create sufficient electrostatic attraction to cause a surface to deform. The actuation voltage can be modified by implanting ions in a dielectric layer attached to one or both surfaces. Upon the application of a voltage, the ions create a baseline level of repulsion or attraction between the two surfaces, which thus require more or less voltage, respectively, to cause a surface to deform. The degree of ion implantation can be chosen to set the actuation voltage as desired, or the surfaces can be made to deform at a given voltage by appropriately selecting the degree of ion implantation.

Claims

1. A micro electromechanical system, comprising:

a conductor layer;

a mechanical layer separated by a cavity from the conductor layer and configured to move relative to the conductor layer; and

a charged layer comprising an incorporated charged species, the charged layer disposed between the conductor layer and the mechanical layer, further comprising a plurality of interferometric light modulating devices, wherein some of the interferometric light modulating devices comprise the charged layer and other of the interferometric light modulating devices lack the charged layer.

2. The microelectromechanical system of claim 1, wherein the charged layer is connected in fixed relation to one of the conductor layer and the mechanical layer.

3. The microelectromechanical system of claim 2, wherein the charged layer is immovable and directly overlies the conductor layer.

4. The microelectromechanical system of claim 1, wherein the charged layer is an ion implanted dielectric layer.

5. The microelectromechanical system of claim 1, wherein the incorporated charged species are as-deposited ions in the dielectric layer.

6. The microelectromechanical system of claim 1, wherein the incorporated charged species is potassium or phosphorous.

7. The microelectromechanical system of claim 1, wherein the incorporated charged species is a positively-charged ion chosen from the group consisting of sodium ions an.

8. The microelectromechanical system of claim 1, wherein the mechanical layer is attached to and disposed in fixed relation to a mirror spaced from the mechanical layer, wherein the mechanical layer is configured to move the mirror relative to the charged layer.

9. The microelectromechanical system of claim 1, wherein the plurality of interferometric light modulating devices form a display. further comprising:

a processor that is in electrical communication with the display, the processor being configured to process image data; and

a memory device in electrical communication with the processor.

10. The microelectromechanical system of claim 9, further comprising:

a driver circuit configured to send at least one signal to the display.

11. The microelectromechanical system of claim 10, further comprising:

a controller configured to send at least a portion of the image data to the driver circuit.

12. The microelectromechanical system of claim 9, further comprising:

an image source module configured to send the image data to the processor.

13. The microelectromechanical system of claim 12, wherein the image source module comprises at least one of a receiver, transceiver, and transmitter.

14. The microelectromechanical system of claim 9, further comprising:

an input device configured to receive input data and to communicate the input data to the processor.

15. The microelectromechanical system of claim 1, wherein the some of the interferometric light modulating devices have conductor layers and mechanical layers configured for producing constructive interference predominately at one frequency and wherein the other of the interferometric light modulating devices have conductor layers and mechanical layers configured for producing constructive interference predominately at one or more other frequencies, wherein the some of the interferometric light modulating devices and the other of the interferometric light modulating devices are grouped to form pixels in the display.

16. A microelectromechanical system, comprising:

a plurality of interferometric modulators, each interferometric modulator comprising;

a conductor layer;

a mechanical layer separated by a cavity from the conductor layer and configured to move relative to the conductor layer; and

a charged layer comprising an incorporated charged species, the charged layer disposed between the conductor layer and the mechanical layer,

wherein at least some of the interferometric light modulating devices comprise different incorporated charged species than other of the interferometric light modulating devices.

17. The microelectromechanical system of claim 16, wherein the at least some of the interferometric light modulating devices comprise positively charged incorporated charged species and the other of the interferometric light modulating devices comprise negatively charged incorporated charged species.

18. A microelectromechanical system, comprising:

a conductor layer;

a mechanical layer separated by a cavity from the conductor layer and configured to move relative to the conductor;

a charged layer comprising an incorporated charged species, the charged layer disposed between the conductor layer and the mechanical layer; and

an other charged layer spaced from the charged layer by the cavity, the other charged layer comprising additional incorporated charged species.

19. The microelectromechanical system of claim 18, wherein the additional incorporated charged species of the other charged layer has an opposite polarity to the incorporated charged species of the charged layer.

20. The microelectromechanical system of claim 18, wherein the additional incorporated charged species of the other charged layer has a same polarity as the incorporated charged species of the charged layer.