Electrooptically wavelength-tunable resonant cavity optoelectronic device for high-speed data transfer

• US 7,369,583 B2
• Filed: 06/02/2005
• Issued: 05/06/2008
• Est. Priority Date: 06/07/2004
• Status: Expired due to Fees

• Current Assignee: Innolume GmbH
• Original Assignee: Innolume GmbH
• Inventors: Shchukin, Vitaly, Ledentsov, Nikolai
• Primary Examiner(s): Andujar; Leonardo
• Assistant Examiner(s): YEUNG LOPEZ, FEIFEI
• Application Number:
  US11/144,482
• Publication Number:
  US 20050271092A1
• Time in Patent Office: 1,069 Days
• Field of Search: 372/20, 372/21, 372/26, 372/29.01, 372/29.014, 372/29.016, 372/38.06, 372/43.01, 372/44.01, 372/50.1, 372/50.11, 372/68, 372/70, 372/96, 372/97
• US Class Current: 372/20
• CPC Class Codes: G02B 5/28 Interference filters
• CPC Class Codes: H01S 5/0078 for frequency filtering
• CPC Class Codes: H01S 5/0607 by varying physical parameters other than the potential of the electrodes, e.g. by an electric or magnetic field, mechanical deformation, pressure, light, temperature
• CPC Class Codes: H01S 5/1021 Coupled cavities H01S5/14 takes precedence
• CPC Class Codes: H01S 5/18302 comprising an integrated optical modulator
• CPC Class Codes: H01S 5/18311 using selective oxidation
• CPC Class Codes: H01S 5/1833 with more than one structure
• CPC Class Codes: H01S 5/18341 Intra-cavity contacts
• CPC Class Codes: H01S 5/2027 Reflecting region or layer, parallel to the active layer, e.g. to modify propagation of the mode in the laser or to influence transverse modes

Abstract

A device contains at least one wavelength-tunable element controlled by an applied voltage and at least two resonant cavities, where the resonant wavelength of the tunable element is preferably elecrooptically tuned using the quantum confined Stark effect around the resonant wavelength of the other cavity or cavities, resulting in a modulated transmittance of the system. A light-emitting medium is preferably introduced into one of the cavities, permitting the optoelectronic device to work as an intensity-modulated light-emitting diode or diode laser by applying an injection current. The device preferably contains at least three electric contacts to apply a forward or a reverse bias and may operate as a vertical cavity surface emitting light-emitter or modulator or as a tilted cavity light emitter or modulator. Adding a few modulator sections enables applications in semiconductor optical amplifiers, frequency converters or lock-in optical amplifiers.

Claims

1. A semiconductor optoelectronic device comprising:

a) at least two resonant cavities comprising a first resonant cavity and a second resonant cavity;

b) at least one modulator region which electrooptically tunes a resonant wavelength of the second cavity with respect to a resonant wavelength of the first cavity;

c) at least one light generating element comprising a gain region, which generates light when a forward bias is applied to the gain region; and

d) at least three electric contacts which apply bias to the modulator region and to the light generating element independently;

wherein tuning varies an optical transmittance of the device, such that an output optical power is varied; and

wherein the modulator region tunes the resonant wavelength of the second cavity using an effect selected from the group consisting of;

i) a quantum confined Stark effect by applying a reverse bias to tune a resonant component of a refractive index of the modulator region; and

ii) an exciton bleaching effect by injection of nonequilibrium carriers by applying a forward bias;

wherein the device modulates a transmittance of light through a filter comprising at least two coupled cavities by modulating a resonance of at least one of the coupled cavities.

2. The semiconductor optoelectronic device of claim 1, wherein the light generating element and the modulator region are located within the second cavity.

3. The semiconductor optoelectronic device of claim 2, wherein a population inversion is realized in the gain region, and the overall losses are low compared to gain to enable lasing.

4. The semiconductor optoelectronic device of claim 3, wherein the device is selected from the group consisting of:

a) a vertical cavity surface emitting laser;

b) a tilted cavity laser;

c) a multi-section edge-emitting tilted cavity laser; and

d) a multi-section distributed feedback tilted cavity laser.

5. The semiconductor optoelectronic device of claim 2, wherein a modulation of a refractive index of the modulator region changes the resonant wavelength of the second cavity with respect to the resonant wavelength of the first cavity, such that the output optical power is modulated.

6. The semiconductor optoelectronic device of claim 1, wherein the light generating element is placed in the first cavity and the modulator region is placed in the second cavity;

wherein a modulation of a refractive index of the modulator region changes the resonant wavelength of the second cavity with respect to the resonant wavelength of the first cavity, such that the optical output power is modulated.

7. The semiconductor optoelectronic device of claim 6, wherein a population inversion is realized in the gain region, and the overall losses are low compared to gain to enable lasing.

8. The semiconductor optoelectronic device of claim 7, wherein the device is selected from the group consisting of:

a) a vertical cavity surface emitting laser;

b) a tilted cavity laser;

c) a multi-section edge-emitting tilted cavity laser; and

d) a multi-section distributed feedback tilted cavity laser.

9. The semiconductor optoelectronic device of claim 1, wherein the device is selected from the group consisting of:

a) a vertical coupled-cavity waveguide;

b) a tilted cavity waveguide;

c) a multi-section planar waveguide; and

d) a multi-section distributed feedback planar waveguide.

10. The semiconductor optoelectronic device of claim 9, further comprising at least a first section and a second section;

wherein the gain region is placed within the first section comprising the resonant cavities; and

wherein the device operates as a device selected from the group consisting of;

a) a wavelength-tunable semiconductor optical amplifier;

b) a lock-in optical amplifier; and

c) a frequency-convertor for incoming light.

11. The semiconductor optoelectronic device of claim 1, wherein at least one element of the device is formed of materials selected from the group consisting of:

i) III-V semiconductor materials; and

ii) alloys based on III-V semiconductor materials;

wherein the III-V semiconductor materials are selected from the group of binary compounds of an element A, selected from the group consisting of Al, Ga, and In; and

an element B, selected from the group consisting of N, P, As, and Sb.

12. The semiconductor optoelectronic device of claim 11, wherein at least one element of the structure is formed of materials selected from the group consisting of:

a)AlN;

b) GaN;

c) InN;

d) alloys of AlN, GaN, and InN.

13. The semiconductor optoelectronic device of claim 1, wherein the device comprises one light generating element and one modulator region, wherein the light generating element and the modulator region are located within the second cavity.

14. A semiconductor optoelectronic device comprising:

a) at least two resonant cavities comprising a first resonant cavity and a second resonant cavity;

b) at least one modulator region which electrooptically tunes a resonant wavelength of the second cavity with respect to a resonant wavelength of the first cavity;

c) at least one light generating element comprising a gain region, which generates light when a forward bias is applied to the gain region; and

d) at least three electric contacts which apply bias to the modulator region and to the light generating element independently;

wherein tuning varies an optical transmittance of the device, such that an output optical power is varied; and

wherein the modulator region tunes the resonant wavelength of the second cavity using an effect selected from the group consisting of;

i) a quantum confined Stark effect by applying a reverse bias to tune a resonant component of a refractive index of the modulator region; and

ii) an exciton bleaching effect by injection of nonequilibrium carriers by applying a forward bias;

wherein at least one of the resonant cavities operates as a filter element having a spectral band of high transmission;

wherein when the optoelectronic device is in a resonant state, the optoelectronic device generates light at a first wavelength, which corresponds to a resonant wavelength of the filter element; and

wherein, when the optoelectronic device is in a non-resonant state, the optoelectronic device generates laser light at a second wavelength, which is a wavelength other than the resonant wavelength of the filter element.

15. The semiconductor optoelectronic device of claim 14, further comprising a modulator located within the modulator region, wherein the modulator controls a wavelength of laser light such that, when the wavelength of laser light is out of resonance with the spectral band of the filter element, a first intensity of outgoing laser light is low, and when the wavelength of laser light is in resonance with the spectral band of the filter element, a second intensity of outgoing laser light is high.

16. The semiconductor optoelectronic device of claim 14, wherein at least one element of the device is formed of materials selected from the group consisting of:

i) III-V semiconductor materials; and

ii) alloys based on III-V semiconductor materials;

wherein the III-V semiconductor materials are selected from the group of binary compounds of an element A, selected from the group consisting of Al, Ga, and In; and

an element B, selected from the group consisting of N, P, As, and Sb.

17. A method of controlling an intensity of laser light leaving a semiconductor optoelectronic device comprising a first resonant cavity and a second resonant cavity;

at least one modulator region;

at least one light generating element comprising a gain region, which generates light when a forward bias is applied to the gain region; and

at least three electric contacts, comprising the steps of;

a) applying a bias to the modulator region and to the light generating element independently with the electric contacts;

b) electrooptically tuning a resonant wavelength of the second cavity with respect to a resonant wavelength of the first cavity using the modulator region;

c) tuning the resonant wavelength of the second cavity using the modulator region and an effect selected from the group consisting of;

i) a quantum confined Stark effect by applying a reverse bias to tune a resonant component of a refractive index of the modulator region; and

ii) an exciton bleaching effect by injection of nonequilibrium carriers by applying a forward bias;

d) varying an optical transmittance of the device, such that an output optical power is varied; and

operating at least one of the resonant cavities as a filter element having a spectral band of high transmission;

wherein when the optoelectronic device is in a resonant state, the optoelectronic device generates light at a first wavelength, which corresponds to a resonant wavelength of the filter element; and

wherein, when the optoelectronic device is in a non-resonant state, the optoelectronic device generates laser light at a second wavelength, which is a wavelength other than the resonant wavelength of the filter element.

18. The method of claim 17, wherein the light generating element and the modulator region are located within the second cavity.

19. The method of claim 17, further comprising the step of changing the resonant wavelength of the second cavity with respect to the resonant wavelength of the first cavity by modulating a refractive index of the modulator region, such that the output optical power is modulated.

20. A method of controlling an intensity of laser light leaving a semiconductor optoelectronic device comprising a first resonant cavity and a second resonant cavity;

at least one modulator region;

at least one light generating element comprising a gain region, which generates light when a forward bias is applied to the gain region; and

at least three electric contacts, comprising the steps of;

a) applying a bias to the modulator region and to the light generating element independently with the electric contacts;

b) electrooptically tuning a resonant wavelength of the second cavity with respect to a resonant wavelength of the first cavity using the modulator region;

c) tuning the resonant wavelength of the second cavity using the modulator region and an effect selected from the group consisting of;

i) a quantum confined Stark effect by applying a reverse bias to tune a resonant component of a refractive index of the modulator region; and

ii) an exciton bleaching effect by injection of nonequilibrium carriers by applying a forward bias;

d) varying an optical transmittance of the device, such that an output optical power is varied;

wherein the device modulates a transmittance of light through a filter comprising at least two coupled cavities by modulating a resonance of at least one of the coupled cavities.