Light emitting device and image playback device having triplet and singlet compounds in electroluminescent layer

• US 7,372,199 B2
• Filed: 03/26/2007
• Issued: 05/13/2008
• Est. Priority Date: 08/28/2000
• Status: Expired due to Term

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Ikeda, Hisao, Nishi, Takeshi, Yamazaki, Shunpei, Mizukami, Mayumi
• Primary Examiner(s): Roy; Sikha
• Application Number:
  US11/727,309
• Publication Number:
  US 20070170853A1
• Time in Patent Office: 414 Days
• Field of Search: 313/506
• US Class Current: 313/504
• CPC Class Codes: H10K 2101/10 Triplet emission
• CPC Class Codes: H10K 2102/3026 Top emission
• CPC Class Codes: H10K 2102/351 Thickness
• CPC Class Codes: H10K 50/11 characterised by the electroluminescent [EL] layers
• CPC Class Codes: H10K 50/125 specially adapted for multicolour light emission, e.g. for emitting white light
• CPC Class Codes: H10K 50/14 Carrier transporting layers
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays
• CPC Class Codes: H10K 59/131 Interconnections, e.g. wiring lines or terminals
• CPC Class Codes: H10K 59/35 comprising red-green-blue [RGB] subpixels
• CPC Class Codes: H10K 71/00 Manufacture or treatment specially adapted for the organic devices covered by this subclass
• CPC Class Codes: H10K 85/631 Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
• CPC Class Codes: Y10S 428/917 Electroluminescent

Abstract

The luminance of different colors of light emitted from EL elements in a pixel portion of a light emitting device is equalized and the luminance of light emitted from the EL elements is raised. The pixel portion of the light emitting device has EL elements whose EL layers contain triplet compounds and EL elements whose EL layers contain singlet compounds in combination. The luminance of light emitted from the plural EL elements is thus equalized. Furthermore, a hole transporting layer has a laminate structure to thereby cause the EL elements to emit light of higher luminance.

Claims

1. A light emitting device comprising:

a substrate;

a first EL element over the substrate; and

a second EL element over the substrate,

wherein the first EL element comprises a first EL layer comprising a triplet compound,

wherein the second EL element comprises a second EL layer comprising a singlet compound, and

wherein at least one of the first and second EL layers comprises a plurality of hole transporting layers.

2. A light emitting device according to claim 1, wherein the hole transporting layer includes at least a layer containing α

-NPD.

3. A light emitting device according to claim 2, wherein the layer containing α

-NPD is in contact with the light emitting layer.

4. A light emitting device according to claim 1, wherein the triplet compound includes iridium.

5. A light emitting device comprising:

a first substrate;

a second substrate;

a flexible printed circuit;

a pixel portion including a first thin film transistor over the first substrate;

a driver circuit including a second thin film transistor over the second substrate;

wherein the pixel portion comprises a first EL element and a second EL element,

wherein the first EL element comprises a first EL layer comprising a triplet compound,

wherein the second EL element comprises a second EL layer comprising a singlet compound,

wherein at least one of the first and second EL layers comprises a plurality of hole transporting layers, and

wherein the first substrate and the second substrate are connected through the flexible printed circuit.

6. A light emitting device according to claim 5, wherein the hole transporting layer includes at least a layer containing α

-NPD.

7. A light emitting device according to claim 6, wherein the layer containing α

-NPD is in contact with the light emitting layer.

8. A light emitting device according to claim 5, wherein the triplet compound includes iridium.

9. A light emitting device comprising:

a substrate;

a pixel portion including a first thin film transistor over the substrate;

a driver circuit including a second thin film transistor over the substrate;

wherein the pixel portion comprises a first EL element and a second EL element,

wherein the first EL element comprises a first EL layer comprising a triplet compound,

wherein the second EL element comprises a second EL layer comprising a singlet compound, and

wherein at least one of the first and second EL layers comprises a plurality of hole transporting layers.

10. A light emitting device according to claim 9, wherein the hole transporting layer includes at least a layer containing α

-NPD.

11. A light emitting device according to claim 10, wherein the layer containing α

-NPD is in contact with the light emitting layer.

12. A light emitting device according to claim 9, wherein the triplet compound includes iridium.

13. An image playback device comprising:

a main body comprising;

an operation switch; and

a display portion over a substrate and comprising;

a first EL element over the substrate; and

a second EL element over the substrate,

wherein the first EL element comprises a first EL layer comprising a triplet compound,

wherein the second EL element comprises a second EL layer comprising a singlet compound, and

wherein at least one of the first and second EL layers comprises a plurality of hole transporting layers.

14. An image playback device according to claim 13, wherein the hole transporting layer includes at least a layer containing α

-NPD.

15. An image playback device according to claim 14, wherein the layer containing α

-NPD is in contact with the light emitting layer.

16. An image playback device according to claim 13, wherein the triplet compound includes iridium.

17. An image playback device according to claim 13, wherein the image playback device is one selected from the group consisting of a DVD playback device, a CD playback device, and a game machine.