Semiconductor integrated circuit device and method for manufacturing the same

• US 7,379,318 B2
• Filed: 03/22/2005
• Issued: 05/27/2008
• Est. Priority Date: 04/06/2004
• Status: Expired due to Fees

• Current Assignee: Matsushita Electric Industrial Company Limited (Panasonic Holdings Corporation)
• Original Assignee: Matsushita Electric Industrial Company Limited (Panasonic Holdings Corporation)
• Inventors: Yamauchi, Hiroyuki
• Primary Examiner(s): Nguyen; Tuan T.
• Assistant Examiner(s): King; Douglas
• Application Number:
  US11/085,579
• Publication Number:
  US 20050221561A1
• Time in Patent Office: 1,162 Days
• Field of Search: 365/154, 365/104, 365/188, 257/391, 257/392
• US Class Current: 365/104
• CPC Class Codes: G11C 17/12 using field-effect devices
• CPC Class Codes: H01L 27/105 including field-effect components

Abstract

A semiconductor integrated circuit device includes a semiconductor substrate and a ROM region, an SRAM region and a peripheral circuit region which are formed on the semiconductor substrate. Further, a column switch region is provided adjacent to the ROM region. MOS transistors in the ROM region and channel regions of access transistors in the SRAM region have substantially the same p-type impurity concentration. Accordingly, the threshold voltages of the transistors are adjusted by making use of the great dependence of the threshold voltage of the transistor on the channel width.

Claims

1. A semiconductor integrated circuit device comprising:

a semiconductor substrate including an SRAM region and a ROM region;

a plurality of SRAM memory cells, each of which is formed in the SRAM region and includes a flip-flop, a pair of access transistors of a first conductive type connected to the flip-flop and a pair of SRAM bit lines connected to the pair of access transistors, respectively; and

a plurality of ROM memory cells, each of which is formed in the ROM region and includes a ROM transistor of the first conductive type and a ROM bit line connected to the ROM transistor,

wherein a number of the SRAM memory cells connected to each pair of SRAM bit lines is smaller than a number of the ROM memory cells connected to the ROM bit line,

the ROM transistor has a larger channel width than the access transistors, and

the ROM transistor is implanted with impurities having substantially the same concentration as impurities implanted in the pair of access transistors of the SRAM memory cells, and

wherein the semiconductor substrate further includes a ROM column switch region having a ROM column switch comprising a switching transistor of the first conductive type connected to the ROM bit line, and the switching transistor is implanted with second conductivity type impurities at a concentration different from the concentration of the ROM transistor so that the absolute value of the threshold voltage thereof is reduced.

2. The semiconductor integrated circuit device according to claim 1, wherein the semiconductor substrate further comprises a logic circuit region including transistors implanted with impurities having a lower concentration level than the impurities implanted in the pair of access transistors.

3. The semiconductor integrated circuit device according to claim 2, wherein the ROM bit line includes a main line and a sub line connected to the main line and the switching transistor in the ROM column switch is connected to the main line.

4. The semiconductor integrated circuit device according to claim 1, wherein the number of the SRAM memory cells connected to each pair of SRAM bit lines and the number of the ROM memory cells connected to the ROM bit line are set based on a difference of off-leak currents between one of the pair of access transistors and the ROM transistor.

5. The semiconductor integrated circuit device according to claim 4, further comprising a connection transistor of the first conductivity type connected to the switching transistor and a sense amplifier connected to the connection transistor, wherein the connection transistor is implanted with the second conductivity type impurities at the same concentration as the switching transistor.