Silicon-rich silicon nitrides as etch stops in MEMS manufacture

• US 7,382,515 B2
• Filed: 01/18/2006
• Issued: 06/03/2008
• Est. Priority Date: 01/18/2006
• Status: Expired due to Fees

• Current Assignee: Snaptrack Incorporated (Qualcomm, Inc.)
• Original Assignee: Qualcomm MEMS Technologies Incorporated (Qualcomm, Inc.)
• Inventors: Chung, Wonsuk, Sasagawa, Teruo, Zee, Steve
• Primary Examiner(s): Choi; William C
• Application Number:
  US11/334,990
• Publication Number:
  US 20070170540A1
• Time in Patent Office: 867 Days
• Field of Search: 359/290, 359/302, 359/577, 359/578, 438/52, 438/53, 438/757
• US Class Current: 359/290
• CPC Class Codes: B81B 2201/047 Optical MEMS not provided for in B81B2201/042 - B81B2201/045
• CPC Class Codes: B81C 1/00801 Avoid alteration of functional structures by etching, e.g. using a passivation layer or an etch stop layer B81C1/00595, B81C1/00468 take precedence
• CPC Class Codes: B81C 2201/014 by depositing an etch stop layer, e.g. silicon nitride, silicon oxide, metal
• CPC Class Codes: G02B 26/001 based on interference in an adjustable optical cavity interference filters G02B5/28; devices or arrangements using multiple reflections in spectrometry or monochromators G01J3/26
• CPC Class Codes: Y10T 428/31678 Of metal

Abstract

The fabrication of a MEMS device such as an interferometric modulator is improved by employing an etch stop layer between a sacrificial layer and a an electrode. The etch stop may reduce undesirable over-etching of the sacrificial layer and the electrode. The etch stop layer may also serve as a barrier layer, buffer layer, and or template layer. The etch stop layer may include silicon-rich silicon nitride.

Claims

1. An unreleased MEMS device, comprising:

a silicon nitride layer positioned between a sacrificial layer and an electrode layer, wherein the electrode layer is adapted to be movable upon removal of the sacrificial layer and the ratio of silicon to nitrogen in the silicon nitride layer is greater than 3;

4,

wherein the unreleased MEMS device is an unreleased interferometric modulator and the electrode layer comprises a metal mirror.

2. The unreleased MEMS device of claim 1, wherein the electrode layer is positioned over the sacrificial layer.

3. The unreleased MEMS device of claim 1, wherein the ratio of silicon to nitrogen in the silicon nitride layer is greater than about 1:

1.

4. The unreleased MEMS device of claim 1, wherein the sacrificial layer is sensitive to removal by a XeF₂ etchant.

5. The unreleased MEMS device of claim 1, wherein the sacrificial layer comprises a material selected from the group consisting of amorphous silicon, germanium, molybdenum, and tungsten.

6. The unreleased MEMS device of claim 1, wherein the silicon nitride layer is sensitive to removal by an etchant that is also capable of removing the sacrificial layer.

7. The unreleased MEMS device of claim 1, wherein the electrode layer comprises aluminum.

8. The unreleased MEMS device of claim 1, wherein the silicon nitride layer is adapted to substantially prevent interdiffusion between the electrode layer and the sacrificial layer.

9. The unreleased MEMS device of claim 1, wherein the silicon nitride layer is adapted to substantially prevent a crystallographic orientation of the sacrificial layer from producing a corresponding crystallographic orientation in the electrode layer.

10. The unreleased MEMS device of claim 1, wherein the silicon nitride layer has a refractive index greater than about 2.1.

11. The unreleased MEMS device of claim 10, wherein the silicon nitride layer has a refractive index greater than about 2.2.

12. The unreleased MEMS device of claim 1, wherein the sacrificial layer is selected from the group of molybdenum and amorphous silicon and the electrode layer comprises aluminum.

13. An unreleased MEMS device, comprising:

a silicon nitride layer positioned between a sacrificial layer and an electrode layer, wherein the electrode layer is adapted to be movable upon removal of the sacrificial layer, wherein;

the silicon nitride layer is of a composition that is susceptible to removal by a fluorine containing gas and substantially resistant to a phosphoric acid/acetic acid/nitric acid etchant,

the sacrificial layer is of a composition that is susceptible to removal by the fluorine containing gas, and

the electrode layer is of a composition that is susceptible to removal by the phosphoric acid/acetic acid/nitric acid etchant.

14. The unreleased MEMS device of claim 13, wherein the electrode layer is positioned over the sacrificial layer.

15. The unreleased MEMS device of claim 13, wherein the unreleased MEMS device is an unreleased interferometric modulator and the electrode layer comprises a metal mirror.

16. The unreleased MEMS device of claim 13, wherein the sacrificial layer is selected from the group consisting of molybdenum and amorphous silicon and the electrode layer comprises aluminum.

17. The unreleased MEMS device of claim 13, wherein the the fluorine containing gas is XeF₂.

18. A method of manufacturing a MEMS device, comprising:

forming a sacrificial layer;

forming an electrode layer, wherein the electrode layer is adapted to be movable upon removal of the sacrificial layer, wherein the MEMS device is an interferometric modulator and the electrode layer comprises a metal mirror;

forming a silicon nitride layer between the sacrificial layer and the electrode layer, wherein the ratio of silicon to nitrogen in the silicon nitride layer is greater than about 3;

4;

patterning the electrode layer; and

removing the sacrificial layer.

19. The method of claim 18, wherein the ratio of silicon to nitrogen in the silicon nitride layer is greater than about 1:

1.

20. The method of claim 18, wherein forming the sacrificial layer comprises depositing a material selected form the group consisting of molybdenum, amorphous silicon, germanium, and tungsten.

21. The method of claim 18, wherein forming the silicon nitride layer comprises reacting silane with ammonia on a surface of the sacrificial layer.

22. The method of claim 18, wherein forming the silicon nitride layer comprises depositing silicon nitride on a surface of the sacrificial layer using physical vapor deposition.

23. The method of claim 18, wherein forming the electrode layer comprises depositing aluminum onto the silicon nitride layer.

24. The method of claim 18, wherein patterning the electrode layer comprises etching the electrode layer using an etchant that does not remove the silicon nitride layer.

25. The method of claim 18, wherein removing the sacrificial layer comprises etching the sacrificial layer with an etchant that also removes the silicon nitride layer.

26. The method of claim 18, further comprising patterning the silicon nitride layer after patterning of the electrode layer and prior to removing the sacrificial layer.

27. An interferometric modulator manufactured by the process of claim 18.

28. A method of manufacturing a MEMS device, comprising:

forming a sacrificial layer;

forming an electrode layer, wherein the electrode layer is adapted to be movable upon removal of the sacrificial layer;

forming an etch stop layer between the sacrificial layer and the electrode layer;

patterning the electrode layer; and

removing the sacrificial layer and etch stop layer with a same etchant.

29. The method of claim 28, wherein the etch stop layer comprises a silicon nitride.

30. The method of claim 29, wherein the etch stop layer has a refractive index greater than about 2.1.

31. The method of claim 28, wherein the MEMS device is an interferometric modulator and the electrode layer comprises a metal mirror.

32. The method of claim 28, where the etchant comprises xenon fluoride.

33. The method of claim 28, wherein:

forming the sacrificial layer comprises depositing a material selected from the group consisting of molybdenum, amorphous silicon, germanium, and tungsten;

forming the etch stop layer comprises forming silicon nitride on the sacrificial layer; and

forming the electrode layer comprises depositing aluminum onto the silicon nitride.

34. A MEMS device manufactured by the process of claim 28.