Semiconductor device tester
First Claim
1. A method for obtaining information regarding one or more holes that are disposed in a semiconductor wafer or disposed in a layer which is disposed on or above the semiconductor wafer, the method comprising:
- irradiating the one or more holes with an electron beam after formation of the one or more holes is completed; and
determining information relating to a bottom diameter or a bottom circumference of the one or more holes using data which is representative of an amount of substrate current which is generated in response to irradiating the one or more holes with an electron beam.
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Accused Products
Abstract
A system and method is disclosed for obtaining information regarding one or more contact and/or via holes on a semiconductor wafer. In one embodiment, the method obtains information regarding one or more holes (for example, via or contact) that are disposed in a semiconductor wafer or disposed in a layer which is disposed on or above the semiconductor wafer. The method of this embodiment comprises irradiating the one or more holes with an electron beam; and determining information relating to a bottom diameter or a bottom circumference of the one or more holes using data which is representative of an amount of substrate current which is generated in response to irradiating the one or more holes with an electron beam.
57 Citations
13 Claims
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1. A method for obtaining information regarding one or more holes that are disposed in a semiconductor wafer or disposed in a layer which is disposed on or above the semiconductor wafer, the method comprising:
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irradiating the one or more holes with an electron beam after formation of the one or more holes is completed; and determining information relating to a bottom diameter or a bottom circumference of the one or more holes using data which is representative of an amount of substrate current which is generated in response to irradiating the one or more holes with an electron beam. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A method for obtaining information regarding one or more holes that are disposed in a semiconductor wafer or disposed in a layer which is disposed on or above the semiconductor wafer, the method comprising:
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irradiating the one or more holes with an electron beam; and determining information relating to a bottom diameter or a bottom circumference of the one or more holes using data which is representative of an amount of substrate current which is generated in response to irradiating the one or more holes with an electron beam; wherein determining information relating to the bottom diameter or the bottom circumference of the one or more holes includes using data which is representative of substrate currents measured for a plurality of acceleration voltages of the electron beam.
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13. A method for obtaining information regarding one or more holes that are disposed in a semiconductor wafer or disposed in a layer which is disposed on or above the semiconductor wafer, the method comprising:
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irradiating the one or more holes with an electron beam; and determining information relating to a bottom diameter or a bottom circumference of the one or more holes using data which is representative of an amount of substrate current which is generated in response to irradiating the one or more holes with an electron beam; and determining the presence of a film or dust in the one or more holes using the data which is representative of a substrate current which is generated in response to irradiating the one or more holes with an electron beam.
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Specification