Flip chip metallization method and devices
First Claim
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1. A method of interconnect metallization for an electronic device having electrical contacts exposed through a passivation layer, comprising the steps of:
- a) depositing an adhesion layer on the electrical contacts, the adhesion layer including titanium;
b) depositing a diffusion barrier layer on the adhesion layer, the diffusion barrier layer including platinum;
c) depositing a wetable layer on the diffusion barrier layer, the wetable layer including gold; and
d) depositing a wetting stop layer on a portion of the wetable layer, the wetting stop layer including titanium and tungsten.
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Abstract
Interconnect metallization schemes and devices for flip chip bonding are disclosed and described. Metallization schemes include an adhesion layer, a diffusion barrier layer, a wetable layer, and a wetting stop layer. Various thicknesses and materials for use in the different layers are disclosed and are particularly useful for metallization in implantable electronic devices such as neural electrode arrays.
20 Citations
20 Claims
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1. A method of interconnect metallization for an electronic device having electrical contacts exposed through a passivation layer, comprising the steps of:
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a) depositing an adhesion layer on the electrical contacts, the adhesion layer including titanium; b) depositing a diffusion barrier layer on the adhesion layer, the diffusion barrier layer including platinum; c) depositing a wetable layer on the diffusion barrier layer, the wetable layer including gold; and d) depositing a wetting stop layer on a portion of the wetable layer, the wetting stop layer including titanium and tungsten. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A device compatible with flip chip bonding, comprising:
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a) an electronic device having a plurality of electrical interconnects disposed in a planar array and exposed through a passivation layer; and b) an underbump metallization stack disposed on at least one exposed electrical interconnect, the underbump metallization stack comprising; i) an adhesion layer disposed on the electrical interconnect, the adhesion layer including titanium; ii) a diffusion barrier disposed over the adhesion layer, the diffusion layer include platinum; iii) a wetable layer disposed over the diffusion layer, the wetable layer including gold; and iv) a wetting stop layer disposed over the wetable layer, the wetting stop layer including titanium and tungsten. - View Dependent Claims (15, 16, 17, 18, 19, 20)
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Specification