Substrate for transparent electrodes
First Claim
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1. A substrate for a transparent electrode, comprising:
- a transparent substrate; and
two or more layers of different transparent conductive films formed on said transparent substrate,wherein an upper layer transparent conductive film has a higher heat resistance than that of a lower layer transparent conductive film, andat least one of said layers other than an uppermost layer is an indium tin oxide film, having a thickness of 100-1000 nm,and at least one transparent conductive film other than said indium tin oxide film comprises one or more transparent conductive films selected from the group consisting of fluorine doped tin oxide, antimony doped tin oxide, tin oxide, fluorine doped zinc oxide, aluminum doped zinc oxide, gallium doped zinc oxide, boron doped zinc oxide, and zinc oxide, having a thickness of 30-350 nm,wherein said indium tin oxide layer is underneath and adjacent to said upper layer.
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Abstract
One object of the present invention is to provide a transparent electrode substrate with an ITO film formed thereon, used for example as the transparent electrode plate in a dye sensitized solar cell, for which the electrical resistance does not increase even when exposed to high temperatures of 300° C. or higher. In order to achieve the object, the present invention provides a substrate for a transparent electrode, wherein two or more layers of different transparent conductive films are formed on a transparent substrate, and an upper layer transparent conductive film has a higher heat resistance than that of a lower layer transparent conductive film.
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15 Claims
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1. A substrate for a transparent electrode, comprising:
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a transparent substrate; and two or more layers of different transparent conductive films formed on said transparent substrate, wherein an upper layer transparent conductive film has a higher heat resistance than that of a lower layer transparent conductive film, and at least one of said layers other than an uppermost layer is an indium tin oxide film, having a thickness of 100-1000 nm, and at least one transparent conductive film other than said indium tin oxide film comprises one or more transparent conductive films selected from the group consisting of fluorine doped tin oxide, antimony doped tin oxide, tin oxide, fluorine doped zinc oxide, aluminum doped zinc oxide, gallium doped zinc oxide, boron doped zinc oxide, and zinc oxide, having a thickness of 30-350 nm, wherein said indium tin oxide layer is underneath and adjacent to said upper layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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Specification