Lithographic projection apparatus and a device manufacturing method using such lithographic projection apparatus

• US 7,403,264 B2
• Filed: 07/08/2004
• Issued: 07/22/2008
• Est. Priority Date: 07/08/2004
• Status: Active Grant

• Current Assignee: ASML Netherlands BV (ASML Holding NV)
• Original Assignee: ASML Netherlands BV (ASML Holding NV)
• Inventors: Baselmans, Johannes Jacobus Matheus, Jeunink, Andre Bernardus, De Groot, Simon, Tel, Wim Tjibbo, Van Der Hoff, Alexander Hendrikus Martinus, Akhssay, M'hamed, Van De Stadt, Arnout, Commissaris, Franciscus Antonius Chrysogonus Marie, Van Dijk, Remco Marcel
• Primary Examiner(s): NGUYEN, HUNG
• Application Number:
  US10/886,051
• Publication Number:
  US 20060008716A1
• Time in Patent Office: 1,475 Days
• Field of Search: 355/52, 355/53, 355/55, 355/67, 250/548
• US Class Current: 355/67
• CPC Class Codes: G03F 7/70258 Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
• CPC Class Codes: G03F 7/70491 Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
• CPC Class Codes: G03F 7/705 Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
• CPC Class Codes: G03F 7/706 Aberration measurement
• CPC Class Codes: G03F 7/70891 Temperature
• CPC Class Codes: G03F 9/7046 Strategy, e.g. mark, sensor or wavelength selection

Abstract

A lithographic projection apparatus is disclosed that includes a predictive system configured to predict changes in projection system aberrations with time with respect to measured aberration values, a modelling system configured to determine an application-specific effect of said predicted projection system aberration changes on at least one parameter of an image for a selected pattern, a control system configured to generate a control signal specific to the selected pattern according to said predicted projection system aberration changes and their application-specific effect on the at least one parameter of the image, and an image adjusting system, responsive to the control signal, to compensate for the application-specific effect of said predicted projection system aberration changes on the image. Adjustments may therefore be determined optimally for a given application.

Claims

1. Lithographic projection apparatus comprising:

a support structure configured to hold a patterning device to impart a selected pattern to a beam of radiation;

a substrate table configured to hold a substrate;

a projection system configured to project the patterned beam onto a target portion of the substrate to form an image;

a predictive system configured to predict changes in projection system aberrations with time with respect to measured aberration values;

a modelling system configured to determine an application-specific effect of said predicted projection system aberration changes on at least one parameter of the image for the selected pattern;

a control system configured to generate a control signal specific to the selected pattern according to said predicted projection system aberration changes and their application-specific effect on the at least one parameter of the image; and

an image adjusting system, responsive to the control signal, to compensate for the application-specific effect of said predicted projection system aberration changes on the image.

2. Lithographic projection apparatus according to claim 1, wherein the control system is arranged to generate a control signal which preferentially compensates predicted changes in features of the image in one of two directions in the plane of the image in accordance with known sensitivities of the selected pattern to projection system aberrations in the two directions.

3. Lithographic projection apparatus according to claim 1, wherein the control system is arranged to generate a control signal which preferentially compensates predicted changes in features of the image in a direction normal to a plane of the image, in accordance with known sensitivities of the selected pattern to projection system aberrations in said direction.

4. Lithographic projection apparatus according to claim 1, wherein the control system is arranged to generate a control signal which further depends on a defined merit function determining relative weightings to be given to the effects of projection system aberrations on the at least one parameter of the image.

5. Lithographic projection apparatus according to claim 1, wherein the predictive system is configured to predict the changes on the basis of a lens heating model that predicts changes in at least one aberration value with time as a result of lens heating or cooling.

6. Lithographic projection apparatus according to claim 1, wherein the modelling system is arranged to determine the application-specific effect of said projection system aberration changes on the basis of data indicative of the selected pattern and an illumination mode setting of the projection system.

7. Lithographic projection apparatus according to claim 1, wherein the control system is arranged to generate a control signal which depends on known correspondence between changes in imaging adjustments of the adjustment system and the aberration changes.

8. Lithographic projection apparatus according to claim 1, further including an overlay metrology feedback system constructed and arranged to correct for a shift in a metrology overlay target for a current layer measured with respect to a metrology overlay target for a previous layer, said shift resulting from said predicted projection system aberration changes and the image adjusting system, on the basis of an optimization procedure providing for the changes in the aberrations to which the image is most sensitive to be compensated for according to a defined merit-function.

9. Lithographic projection apparatus according to claim 1, further including an alignment system constructed and arranged to compensate for effects of a shift in a respective wafer alignment mark provided for the alignment of each layer of successive layers of images to be applied to the target portion, said shift resulting from said predicted projection system aberration changes and said image adjusting system, on the basis of an optimisation procedure providing for the changes in the aberrations to which the image is most sensitive to be compensated for according to a defined merit-function.

10. Lithographic projection apparatus according to claim 1, including an alignment system constructed and arranged to compensate for effects of a shift in a respective mask alignment mark provided for the alignment of each layer of successive layers of images to be applied to the target portion, said shift resulting from said predicted projection system aberration changes and said image adjusting system, on the basis of an optimisation procedure providing for the changes in the aberrations to which the image is most sensitive to be compensated for according to a defined merit-function.

11. Lithographic projection apparatus according to claim 1, wherein the control system incorporates a measuring system constructed and arranged to re-measure at least one aberration value when the modelled effect on the at least one image parameter with time is greater than a corresponding threshold value.

12. Lithographic projection apparatus according to claim 1, wherein the image adjusting system is further arranged to carry out imaging adjustments over successive scan positions during scanning exposure of the substrate to allow for variations in the scanned image over the extent of the substrate in order to optimise the image as a function of scan position.