Method for manufacturing resist pattern and method for manufacturing semiconductor device
First Claim
Patent Images
1. A method of manufacturing a semiconductor device comprising:
- discharging a first composition containing a first photosensitizer on a first conductive layer to form a plurality of first resist patterns under reduced pressure;
exposing the plurality of first resist patterns by irradiation of light using a first photomask, the light having a photosensitive wavelength region of the first photosensitizer, wherein a first portion where the light is irradiated and a second portion where the light is not irradiated are formed in each of the plurality of first resist patterns;
removing one of the first portion and the second portion by developing the plurality of first resist patterns to form a plurality of second resist patterns;
etching the first conductive layer by using the plurality of second resist patterns as a mask to form a plurality of gate wirings and a plurality of gate electrodes over a substrate;
removing the plurality of second resist patterns on the first conductive layer;
forming an insulating film over the plurality of gate wirings and the plurality of gate electrodes;
forming a plurality of semiconductor islands over the plurality of gate electrodes with said insulating film interposed therebeween;
discharging a second composition containing a second photosensitizer on a second conductive layer to form a plurality of third resist patterns under reduced pressure;
exposing the plurality of third resist patterns by irradiation of light using a second photomask, the light having a photosensitive wavelength region of the second photo sensitizer, wherein a third portion where the light is irradiated and a fourth portion where the light is not irradiated are formed in each of the plurality of third resist patterns;
removing one of the third portion and the fourth portion by developing the plurality of third resist patterns to form a plurality of fourth resist patterns;
etching the second conductive layer by using the plurality of fourth resist patterns as a mask to form a plurality of pixel electrodes arranged in a matrix form over the substrate;
removing the plurality of fourth resist patterns on the second conductive layer;
discharging a third composition containing a third photosensitizer on a third conductive layer to form a plurality of fifth resist patterns under reduced pressure;
exposing the plurality of fifth resist patterns by irradiation of light using a third photomask, the light having a photosensitive wavelength region of the third photosensitizer, wherein a fifth portion where the light is irradiated and a sixth portion where the light is not irradiated are formed in each of the plurality of fifth resist patterns;
removing one of the fifth portion and the sixth portion by developing the plurality of fifth resist patterns to form a plurality of sixth resist patterns;
etching the third conductive layer by using the plurality of sixth resist patterns as a mask to form a plurality of source wirings wherein said plurality of source wirings extend across said plurality of gate wirings; and
removing the plurality of sixth resist patterns on the third conductive layer.
1 Assignment
0 Petitions
Accused Products
Abstract
To provide a method for manufacturing a resist pattern designed to reduce a manufacturing cost by improving efficiency in the use of a resist material, a method for removing a resist pattern, and a method for manufacturing a semiconductor device.
The present invention includes a step of forming a resist pattern by discharging a composition containing photosensitizer on a object to be processed under reduced pressure. The present invention includes a step of etching the object to be processed using the resist pattern as a mask, a step of irradiating the resist pattern through a photomask with light within a photosensitive wavelength region of a photosensitizer, and a step of removing the resist pattern on the object to be processed.
40 Citations
22 Claims
-
1. A method of manufacturing a semiconductor device comprising:
-
discharging a first composition containing a first photosensitizer on a first conductive layer to form a plurality of first resist patterns under reduced pressure; exposing the plurality of first resist patterns by irradiation of light using a first photomask, the light having a photosensitive wavelength region of the first photosensitizer, wherein a first portion where the light is irradiated and a second portion where the light is not irradiated are formed in each of the plurality of first resist patterns; removing one of the first portion and the second portion by developing the plurality of first resist patterns to form a plurality of second resist patterns; etching the first conductive layer by using the plurality of second resist patterns as a mask to form a plurality of gate wirings and a plurality of gate electrodes over a substrate; removing the plurality of second resist patterns on the first conductive layer; forming an insulating film over the plurality of gate wirings and the plurality of gate electrodes; forming a plurality of semiconductor islands over the plurality of gate electrodes with said insulating film interposed therebeween; discharging a second composition containing a second photosensitizer on a second conductive layer to form a plurality of third resist patterns under reduced pressure; exposing the plurality of third resist patterns by irradiation of light using a second photomask, the light having a photosensitive wavelength region of the second photo sensitizer, wherein a third portion where the light is irradiated and a fourth portion where the light is not irradiated are formed in each of the plurality of third resist patterns; removing one of the third portion and the fourth portion by developing the plurality of third resist patterns to form a plurality of fourth resist patterns; etching the second conductive layer by using the plurality of fourth resist patterns as a mask to form a plurality of pixel electrodes arranged in a matrix form over the substrate; removing the plurality of fourth resist patterns on the second conductive layer; discharging a third composition containing a third photosensitizer on a third conductive layer to form a plurality of fifth resist patterns under reduced pressure; exposing the plurality of fifth resist patterns by irradiation of light using a third photomask, the light having a photosensitive wavelength region of the third photosensitizer, wherein a fifth portion where the light is irradiated and a sixth portion where the light is not irradiated are formed in each of the plurality of fifth resist patterns; removing one of the fifth portion and the sixth portion by developing the plurality of fifth resist patterns to form a plurality of sixth resist patterns; etching the third conductive layer by using the plurality of sixth resist patterns as a mask to form a plurality of source wirings wherein said plurality of source wirings extend across said plurality of gate wirings; and removing the plurality of sixth resist patterns on the third conductive layer. - View Dependent Claims (2, 3)
-
-
4. A method of manufacturing a semiconductor device comprising:
-
discharging a first composition containing a first photosensitizer on a first conductive layer to form a plurality of first resist patterns under reduced pressure; exposing the plurality of first resist patterns by irradiation of light using a first photomask, the light having a photosensitive wavelength region of the first photosensitizer, wherein a first portion where the light is irradiated and a second portion where the light is not irradiated are formed in each of the plurality of first resist patterns; removing one of the first portion and the second portion by developing the plurality of first resist patterns to form a plurality of second resist patterns; etching the first conductive layer by using the plurality of second resist patterns as a mask to form a plurality of gate wirings and a plurality of gate electrodes over a substrate;
photomask, the light having a photosensitive wavelength region of the third photosensitizer, wherein a fifth portion where the light is irradiated and a sixth portion where the light is not irradiated are formed in each of the plurality of fifth resist patterns;removing one of the fifth portion and the sixth portion by developing the plurality of fifth resist patterns to form a plurality of sixth resist patterns; etching the third conductive layer by using the plurality of sixth resist patterns as a mask to form a plurality of source wirings wherein said plurality of source wirings extend across said plurality of gate wirings; and removing the plurality of sixth resist patterns on the third conductive layer. - View Dependent Claims (5, 6)
-
-
7. A method for manufacturing a semiconductor device comprising the steps of:
-
discharging a composition on an object to form a plurality of first resist patterns under reduced pressure, the composition containing a photosensitizer; removing the plurality of second resist patterns on the first conductive layer; forming an insulating film over the plurality of gate wirings and the plurality of gate electrodes; forming a plurality of first semiconductor islands over the plurality of gate electrodes with said insulating film interposed therebeween; forming each of a plurality of channel protective layers over each of the plurality of first semiconductor islands; forming a plurality of second semiconductor islands over the plurality of first semiconductor islands with the plurality of channel protective layers interposed therebeween; discharging a second composition containing a second photosensitizer on a second conductive layer to form a plurality of third resist patterns under reduced pressure; exposing the plurality of third resist patterns by irradiation of light using a second photomask, the light having a photosensitive wavelength region of the second photosensitizer, wherein a third portion where the light is irradiated and a fourth portion where the light is not irradiated are formed in each of the plurality of third resist patterns; removing one of the third portion and the fourth portion by developing the plurality of third resist patterns to form a plurality of fourth resist patterns; etching the second conductive layer by using the plurality of fourth resist patterns as a mask to form a plurality of pixel electrodes arranged in a matrix form over the substrate; removing the plurality of fourth resist patterns on the second conductive layer; discharging a third composition containing a third photosensitizer on a third conductive layer to form a plurality of fifth resist patterns under reduced pressure; exposing the plurality of fifth resist patterns by irradiation of light using a third photomask, the exposing the plurality of first resist patterns with light using a photomask, wherein a first portion where the light is irradiated and a second portion where the light is not irradiated are formed in the first resist patterns; and removing one of the first portion and the second portion by developing the plurality of first resist patterns to form a plurality of second resist patterns. - View Dependent Claims (8, 9, 10)
-
-
11. A method for manufacturing a semiconductor device comprising the steps of:
-
performing ink jetting on an object to form a plurality of first resist patterns under reduced pressure, wherein each of the plurality of first resist patterns is made of a composition containing a photosensitizer; exposing the plurality of first resist patterns with light using a photomask, wherein a first portion where the light is irradiated and a second portion where the light is not irradiated are formed in the first resist patterns; and removing one of the first portion and the second portion by developing the plurality of first resist patterns to form a plurality of second resist patterns. - View Dependent Claims (12, 13, 14)
-
-
15. A method for manufacturing a semiconductor device comprising the steps of:
-
discharging a composition on an object at pressure in the range of 1×
102 Pa to 2×
104 Pa to form a plurality of first resist patterns, the composition containing a photosensitizer;exposing the plurality of first resist patterns with light using a photomask,wherein a first portion where the light is irradiated and a second portion where the light is not irradiated are formed in the first resist patterns; and removing one of the first portion and the second portion by developing the plurality of first resist patterns to form a plurality of second resist patterns. - View Dependent Claims (16, 17, 18)
-
-
19. A method for manufacturing a semiconductor device comprising the steps of:
-
performing ink jetting at pressure in the range of 1×
102 Pa to 2×
104 Pa to form a plurality of first resist patterns on an object, wherein each of the plurality of first resist patterns is made of a composition containing a photosensitizer;exposing the plurality of first resist patterns with light using a photomask, wherein a first portion where the light is irradiated and a second portion where the light is not irradiated are formed in the first resist patterns; and removing one of the first portion and the second portion by developing the plurality of first resist patterns to form a plurality of second resist patterns. - View Dependent Claims (20, 21, 22)
-
Specification
-
- Resources
Litigation Campaign Assessment
Thank you for your request. You will receive a custom alert email when the Litigation Campaign Assessment is available.
×
-
Current AssigneeSemiconductor Energy Laboratory Co., Ltd.
-
Original AssigneeSemiconductor Energy Laboratory Co., Ltd.
-
InventorsArai, Yasuyuki, Watanabe, Yasuko, Yamazaki, Shunpei
-
Primary Examiner(s)Huff; Mark F.
-
Assistant Examiner(s)RAYMOND, BRITTANY L
-
Application NumberUS10/757,193Publication NumberTime in Patent Office1,658 DaysField of Search430/311, 430/394US Class Current430/311CPC Class CodesG03F 7/0007 Filters, e.g. additive colo...G03F 7/16 Coating processes; Apparatu...H01L 27/1214 comprising a plurality of T...H01L 27/1288 employing particular maskin...
