CMOS imager with selectively silicided gate
First Claim
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1. A method of forming an imager, comprising:
- forming an array of pixel cells comprising;
forming a plurality of gates;
forming a silicide on at least a portion of said plurality of gates; and
removing said silicide from at least a portion of at least one of said plurality of gates,wherein forming said plurality of gates includes forming a photogate and said removing act comprises removing said silicide from part of said photogate.
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Abstract
The invention also relates to an apparatus and method for selectively providing a silicide coating over the transistor gates of a CMOS imager to improve the speed of the transistor gates. The method further includes an apparatus and method for forming a self aligned photo shield over the CMOS imager.
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5 Claims
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1. A method of forming an imager, comprising:
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forming an array of pixel cells comprising; forming a plurality of gates; forming a silicide on at least a portion of said plurality of gates; and removing said silicide from at least a portion of at least one of said plurality of gates, wherein forming said plurality of gates includes forming a photogate and said removing act comprises removing said silicide from part of said photogate. - View Dependent Claims (2, 3, 4)
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5. A method of forming a pixel cell, comprising:
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forming a polysilicon layer over a substrate comprising a doped region; forming a photogate insulator over said doped region; forming a metal layer over said photogate insulator and said polysilicon; forming a silicide from said metal layer over said polysilicon layer; removing a part of said metal layer over said photogate insulator, wherein said removing act comprises retaining said sillicide over said polysilicon layer; forming a first gate over said doped region from said polysilicon layer; and
forming a second gate from said silicide and said poly silicon layer.
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Specification