Semiconductor packaging device comprising a semiconductor chip including a MOSFET

• US 7,408,251 B2
• Filed: 12/21/2005
• Issued: 08/05/2008
• Est. Priority Date: 07/31/2003
• Status: Expired due to Fees

• Current Assignee: Renesas Electronics Corporation
• Original Assignee: Renesas Technology Corporation (Renesas Electronics Corporation)
• Inventors: Sato, Hiroshi, Hata, Toshiyuki
• Primary Examiner(s): Lee; Eugene
• Assistant Examiner(s): KARIMY, TIMOR
• Application Number:
  US11/312,528
• Publication Number:
  US 20060097391A1
• Time in Patent Office: 958 Days
• Field of Search: 257/735, 257/678, 257/666, 257/E33.056, 257/E23.001, 257/E23.061
• US Class Current: 257/678
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/0558 being stacked
• CPC Class Codes: H01L 2224/05624 Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/0603 Bonding areas having different sizes, e.g. different heights or widths
• CPC Class Codes: H01L 2224/11 Manufacturing methods
• CPC Class Codes: H01L 2224/1134 Stud bumping, i.e. using a wire-bonding apparatus
• CPC Class Codes: H01L 2224/13 of an individual bump connector
• CPC Class Codes: H01L 2224/13144 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/16245 the item being metallic
• CPC Class Codes: H01L 2224/29111 Tin [Sn] as principal constituent
• CPC Class Codes: H01L 2224/29139 Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/32245 the item being metallic
• CPC Class Codes: H01L 2224/73204 the bump connector being embedded into the layer connector
• CPC Class Codes: H01L 2224/73253 Bump and layer connectors
• CPC Class Codes: H01L 2224/83139 Guiding structures on the body
• CPC Class Codes: H01L 2224/8314 Guiding structures outside the body
• CPC Class Codes: H01L 2224/83192 wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/838 Bonding techniques
• CPC Class Codes: H01L 2224/84138 the guiding structures being at least partially left in the finished device
• CPC Class Codes: H01L 23/49562 for devices being provided for in H01L29/00
• CPC Class Codes: H01L 24/05 : of an individual bonding area
• CPC Class Codes: H01L 24/11 : Manufacturing methods for bumps on insulating substrates H01L21/4853
• CPC Class Codes: H01L 24/13 : of an individual bump connector
• CPC Class Codes: H01L 24/33 : of a plurality of layer connectors
• CPC Class Codes: H01L 24/83 : using a layer connector
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01015 : Phosphorus [P]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/0132 : Binary Alloys
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/0781 : being an ohmic electrical conductor
• CPC Class Codes: H01L 2924/1305 : Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/13055 : Insulated gate bipolar transistor [IGBT]
• CPC Class Codes: H01L 2924/1306 : Field-effect transistor [FET]
• CPC Class Codes: H01L 2924/13091 : Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/15747 : Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/3512 : Cracking

Abstract

A thin semiconductor device difficult to cause breakage of a semiconductor chip is disclosed. The semiconductor device comprises a sealing member, a semiconductor chip positioned within the sealing member, the semiconductor chip having a source electrode and a gate electrode on a first main surface thereof and a drain electrode on a second main surface as a back surface thereof, a first electrode plate (drain electrode plate) having an upper surface and a lower surface, a part of the upper surface of the first electrode plate being exposed to an upper surface of the sealing member and the lower surface portions of end portions of the first electrode plate being exposed to a lower surface of the sealing member, and second electrode plates (source electrode plate and gate electrode plate) each having a lower surface exposed to the lower surface of the sealing member and an upper surface positioned within the sealing member, wherein the drain electrode of the semiconductor chip is electrically connected to the drain electrode plate through an adhesive, one or plural stud type bump electrodes are formed by gold wire on the surface of each of the source electrode and gate electrode of the semiconductor chip, the bump electrode(s) being covered with an electrically conductive adhesive, the bump electrode(s) and the source and gate electrode plates are electrically connected with each other through the adhesive, and the bump electrode(s) and the source and gate electrode plates are not in contact with each other.

Claims

1. A semiconductor device comprising:

a semiconductor chip including a MOSFET;

a sealing member sealing the semiconductor chip, said sealing member being formed of an insulating resin and having a top surface, a bottom surface, and four side faces connecting the upper and lower surfaces;

a source electrode plate of the MOSFET formed on a bottom surface of the semiconductor chip, a bottom surface of the source electrode plate being exposed from the bottom surface of the sealing member and two terminals of the source electrode plate projecting outside of two side faces of the sealing member;

a gate electrode plate of the MOSFET formed on the bottom surface of the semiconductor chip, a bottom surface of the gate electrode plate being exposed from the bottom surface of the sealing member and two terminals of the gate electrode plate projecting outside of said two side faces of the sealing member;

a drain electrode plate including a first portion, a second portion, and a third portion, the first portion being formed on a top surface of the semiconductor chip, the second and third portions extending downward from the first portion towards the bottom surface of the semiconductor chip to sandwich the semiconductor chip in-between, at least a pair of drain electrode terminals being connected with the second and third portions respectively, disposed under the semiconductor chip, and exposed from the bottom surface of the sealing member, said drain electrode terminals projecting outside of other two side faces of the sealing member,

wherein the source and gate electrode terminals are positioned between the drain electrodes terminals, and

wherein one of the electrodes of the semiconductor chip on the bottom surface of the semiconductor chip is not physically connected but electrically connected to the source, gate or drain electrode plate through an electrically conductive adhesive, and said adhesive is sandwiched between the semiconductor chip and the source, gate or drain electrode plate.

2. The semiconductor device according to claim 1, wherein the source, gate and drain electrode terminals are made of lead frames.

3. The semiconductor device according to claim 1, wherein the drain electrode plate is made of a lead frame.

4. The semiconductor device according to claim 1, wherein the source, gate and drain electrode terminals are made of copper plates.

5. The semiconductor device according to claim 1, wherein the drain electrode plate is made of a copper plate.

6. The semiconductor device according to claim 1, wherein the source and gate electrode terminals are connected with the source and gate electrode plates respectively via adhesives.

7. The semiconductor device according to claim 1, wherein the drain electrode plate is connected with the drain electrode via an adhesive.

8. The semiconductor device according to claim 1, wherein the MOSFET is a power MOSFET.

9. The semiconductor device according to claim 1, wherein the MOSFET has a gate electrode formed in a semiconductor substrate.

10. The semiconductor device according to claim 1, wherein bottom surfaces of the drain electrode terminals, the gate electrode terminals and the source electrode terminals are provided in a same level.

11. The semiconductor device according to claim 1, wherein a stud-type bump electrode is formed on a lower surface of said one electrode of the semiconductor chip formed on the bottom surface of the semiconductor chip, the bump electrode is covered with the electrically conductive adhesive, and the bump electrode and the source, gate or drain electrode plate are not physically connected but electrically connected to each other through the adhesive.

12. The semiconductor device according to claim 1, wherein a stud-type bump electrode is formed on a top surface of one of the electrodes of the semiconductor chip formed on the top surface of the semiconductor chip, the bump electrode is covered with an electrically conductive adhesive, and the bump electrode and the drain electrode plate are not physically connected but electrically connected to each other through the adhesive, and the adhesive is sandwiched between the semiconductor chip and the drain electrode plate.

13. The semiconductor device according to claim 12, wherein said adhesive fills up space between the semiconductor chip and the drain electrode plate.

14. The semiconductor device according to claim 1, wherein said adhesive fills up space between the semiconductor chip and the source, gate or drain electrode plate.

15. A semiconductor device comprising:

a sealing member formed of an insulating resin and having an upper surface and a lower surface, respectively, and side faces connecting the upper and lower surfaces with each other;

a semiconductor chip including a MOSFET and being positioned within the sealing member, the semiconductor chip including electrodes respectively on a top surface and a bottom surface thereof, respectively;

a drain electrode plate of the MOSFET having a first portion, a second portion, and a third portion, the first portion being formed on a top surface of the semiconductor chip and a part of an upper surface of the first portion being exposed from the upper surface of the sealing member, the second and third portions extending downward from the first portion towards the bottom surface of the semiconductor chip to sandwich the semiconductor chip in-between, and end portions of the drain electrode plate being connected with the second and third portions respectively, disposed under the semiconductor chip and exposed from the lower surface of the sealing member, said end portions of the drain electrode plate projecting outside of other two side faces of the sealing member; and

a source or gate electrode plate of the MOSFET having an upper surface and a lower surface, the lower surface of the source or gate electrode plate being exposed from the lower surface of the sealing member and the upper surface of the source or gate electrode plate being positioned within the sealing member, two terminals of the source or gate electrode plate projecting outside of two side faces of the sealing member,

wherein one of the electrodes of the semiconductor chip on the bottom surface of the semiconductor chip is not physically connected but electrically connected to the source, gate or drain electrode plate through an electrically conductive adhesive, and said adhesive is sandwiched between the semiconductor chip and the source, gate or drain electrode plate, and

wherein a stud-type bump electrode is formed on a surface of another one of the electrodes of the semiconductor chip formed on the top surface of the semiconductor chip, the bump electrode is covered with another electrically conductive adhesive, and the bump electrode and the drain electrode plate are not physically connected but electrically connected to each other through said another adhesive, and said another adhesive is sandwiched between the semiconductor chip and the drain electrode plate.

16. The semiconductor device according to claim 15, wherein said adhesive fills up space between the semiconductor chip and the source, gate or drain electrode plate, and said another adhesive fills up space between the semiconductor chip and the drain electrode plate.