Film thickness measuring method of member to be processed using emission spectroscopy and processing method of the member using the measuring method

• US 7,411,684 B2
• Filed: 06/07/2007
• Issued: 08/12/2008
• Est. Priority Date: 06/20/2000
• Status: Expired due to Term

• Current Assignee: Hitachi, Ltd.
• Original Assignee: Hitachi, Ltd.
• Inventors: Fujii, Takashi, Yoshigai, Motohiko, Usui, Tatehito, Kaji, Tetsunori
• Primary Examiner(s): Connolly; Patrick J
• Application Number:
  US11/759,536
• Publication Number:
  US 20070229845A1
• Time in Patent Office: 432 Days
• Field of Search: 356/503, 356/504, 356630-632
• US Class Current: 356/503
• CPC Class Codes: G01B 11/0625 with measurement of absorption or reflection
• CPC Class Codes: G01B 11/0675 using interferometry
• CPC Class Codes: H01L 21/67069 for drying etching
• CPC Class Codes: H01L 22/26 Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement endpoint detection arrangements in CMP apparatus B24B37/013, in discharge apparatus H01J37/32
• CPC Class Codes: Y10T 436/106664 Blood serum or blood plasma standard or control

Abstract

A system including: a film thickness measuring apparatus for measuring a film thickness of a member to be processed, including: a differential waveform pattern data base for holding a standard pattern consisting of a time differential value of an interference light for each of multiple wavelengths with respect to a film thickness of a first member to be processed; a unit for measuring an intensity of an interference light for each of multiple wavelengths of a second member to be processed; a unit for obtaining a real pattern consisting of time differential values of measured interference light intensities; and a unit for determining a processed amount of the film by using a pattern of zero-cross points of the differential values of intensities of the received interference light for a second wavelength among the received interference lights of the multiple wavelengths.

Claims

1. A system comprising:

an apparatus for processing a semiconductor wafer which performs a predetermined processing, as to a film on a surface of the semiconductor wafer to be processed disposed on a sample stand within a vacuum chamber, by using plasma generated within the vacuum chamber, the apparatus including;

a light source which emits light having multiple wavelengths within the vacuum chamber;

a port which is disposed so as to face on an inner surface of the vacuum chamber and through which light is transmitted from an inside of the vacuum chamber;

a light receiving unit which receives, through the port, interference lights of multiple wavelengths reflected from the surface of the semiconductor wafer based on the light emitted from the light source during the processing of the semiconductor wafer; and

a detecting device which detects a processed amount of the film during the processing of the semiconductor wafer based on a first pattern and a second pattern, wherein the first pattern is obtained by measuring intensities of the interference lights of multiple wavelengths received by the light receiving unit and obtaining a pattern of differential values of the measured interference light intensities using a wavelength as a parameter as the first pattern, and the second pattern is a pattern of differential values of intensities of interference lights of multiple wavelengths with respect to a predetermined processed amount of the film actually obtained in advance as to a sample semiconductor wafer having substantially same configuration as the semiconductor wafer

a film thickness measuring apparatus for measuring a film thickness of a member to be processed, including;

a differential waveform pattern data base for holding a standard pattern consisting of a time differential value of an interference light for each of multiple wavelengths with respect to a film thickness of a first member to be processed;

a unit for measuring an intensity of an interference light for each of multiple wavelengths of a second member to be processed;

a unit for obtaining a real pattern consisting of time differential values of measured interference light intensities; and

a unit for determining a film thickness by using a pattern of zero-cross points of the differential values of intensities of the received interference light for a second wavelength among the received interference lights of the multiple wavelengths.

2. A system according to claim 1, comprising:

a unit which adjusts a processing of the film of the semiconductor wafer based on the detected processed amount of the film.

3. A system for processing a semiconductor wafer according to claim 1, wherein the second pattern is the pattern of the differential values of the intensities of interference lights of multiple wavelengths with respect to at least three predetermined processed amounts of the film actually obtained in advance as to the sample semiconductor wafer having substantially same configuration as the semiconductor wafer.

4. A system for processing a semiconductor wafer according to claim 1, wherein the light source is a halogen lamp.

5. An apparatus for processing a semiconductor wafer which performs a predetermined processing, as to a film on a surface of the semiconductor wafer to be processed disposed on a sample stand within a vacuum chamber, by using plasma generated within the vacuum chamber, comprising:

a light source which emits light having multiple wavelengths within the vacuum chamber;

a port which is disposed so as to face on an inner surface of the vacuum chamber and through which light is transmitted from an inside of the vacuum chamber;

a light receiving unit which receives, through the port, interference lights of multiple wavelengths reflected from the surface of the semiconductor wafer based on the light emitted from the light source during the processing of the semiconductor wafer; and

a detecting device which detects a processed amount of the film during the processing of the semiconductor wafer based on a first pattern and a second pattern, wherein the first pattern is obtained by measuring intensities of the interference lights of multiple wavelengths received by the light receiving unit and obtaining a pattern of differential values of the measured interference light intensities using a wavelength as a parameter as the first pattern, and the second pattern is a pattern of differential values of intensities of interference lights of multiple wavelengths with respect to a predetermined processed amount of the film actually obtained in advance as to a sample semiconductor wafer having substantially same configuration as the semiconductor wafer.

6. An apparatus for processing a semiconductor wafer according to claim 5, comprising:

a unit which adjusts a processing of the film of the semiconductor wafer based on the detected processed amount of the film.

7. An apparatus for processing a semiconductor wafer according to claim 5, wherein the second pattern is the pattern of the differential values of the intensities of interference lights of multiple wavelengths with respect to at least three predetermined processed amounts of the film actually obtained in advance as to the sample semiconductor wafer having substantially same configuration as the semiconductor wafer.

8. An apparatus for processing a semiconductor wafer according to claim 5, wherein the light source is a halogen lamp.

9. An apparatus for processing a semiconductor wafer which performs a predetermined processing, as to a film on a surface of the semiconductor wafer to be processed disposed on a sample stand within a vacuum chamber, by using plasma generated within the vacuum chamber, comprising:

a light source which emits light having multiple wavelengths within the vacuum chamber;

a port which is disposed so as to face on an inner surface of the vacuum chamber and through which light is transmitted from an inside of the vacuum chamber;

a light receiving unit which receives, through the port, interference lights of multiple wavelengths reflected front the surface of the semiconductor wafer based on the light emitted from the light source during the processing of the semiconductor wafer; and

a detecting device which measures intensities of the interference lights of multiple wavelength, then detects differential values of the measured interference light intensities, then obtains a range of a processing amount of the film by using a first zero-cross pattern which is formed by points where the differential values of the measured interference light intensities as to a first wavelength among the interference lights of multiple wavelength cross a zero value of the differential values, and detects a processed amount of the film during the processing of the semiconductor wafer from the obtained range of the processing amount of the film by using a second zero-cross pattern which is formed by points where the differential values of the measured interference light intensities as to a second wavelength among the interference lights of multiple wavelength cross the zero value of the differential values.

10. An apparatus for processing a semiconductor wafer according to claim 9, comprising:

a unit which adjusts a processing of the film of the semiconductor wafer based on the detected processed amount of the film.

11. An apparatus for processing a semiconductor wafer according to claim 9, wherein the detecting device detects the processed amount of the film based on a number of times where the differential values of the measured interference light intensities as to the first or second wavelength among the interference lights of multiple wavelength cross the zero value of the differential values.

12. An apparatus for processing a semiconductor wafer according to claim 9, wherein the first zero-cross pattern is formed by points where first differential values of the measured interference light intensities as to the first wavelength among the interference lights of multiple wavelength cross the zero value of the differential values, and the second zero-cross pattern is formed by points where second differential values of the measured interference light intensities as to the second wavelength among the interference lights of multiple wavelength cross the zero value of the differential values.

13. An apparatus for processing a semiconductor wafer according to claim 9, wherein the light source is a halogen lamp.