Semiconductor device having internal stress film

  • US 7,417,289 B2
  • Filed: 04/05/2007
  • Issued: 08/26/2008
  • Est. Priority Date: 06/16/2003
  • Status: Active Grant
First Claim
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1. A semiconductor device, comprising a MISFET, wherein the MISFET includes:

  • an active region made of a semiconductor substrate;

    a gate insulating film formed on the active region;

    a gate electrode formed on the gate insulating film;

    source/drain regions formed in regions of the active region located on both sides of the gate electrode; and

    an internal stress film formed on the source/drain regions and for generating a stress in a gate length direction in a channel region located in the active region under the gate electrode, and the internal stress film is not formed on an upper surface of the gate electrode.

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