Solid-state imaging device and method for producing the same

• US 7,420,235 B2
• Filed: 08/07/2006
• Issued: 09/02/2008
• Est. Priority Date: 08/09/2005
• Status: Expired due to Fees

• Current Assignee: Fujifilm Corporation (Fujifilm Holdings Corporation)
• Original Assignee: Fujifilm Corporation (Fujifilm Holdings Corporation)
• Inventors: Saito, Maki
• Primary Examiner(s): Soward; Ida M
• Application Number:
  US11/499,697
• Publication Number:
  US 20070034981A1
• Time in Patent Office: 757 Days
• Field of Search: 257/59, 257/78, 257/88, 257/93, 257291-294, 257/215, 257222-223, 257/226, 257/238, 257/242, 257/251, 257461-462
• US Class Current: 257/293
• CPC Class Codes: H01L 27/14609 Pixel-elements with integrated switching, control, storage or amplification elements scanning details of imagers (circuitry of solid-state image sensors H04N25/00); circuitry of imagers H04N25/70
• CPC Class Codes: H01L 27/14612 involving a transistor
• CPC Class Codes: H01L 27/14627 Microlenses
• CPC Class Codes: H01L 27/14689 MOS based technologies
• CPC Class Codes: H01L 31/1122 the device being a CCD device

Abstract

In the solid-state imaging device of the present invention having a photoelectric conversion section and a charge transfer section equipped with a charge transfer electrode for transferring an electric charge generated in the photoelectric conversion section, the charge transfer electrode has an alternate arrangement of a first layer electrode including a first layer electrically conducting film and a second layer electrode including a second layer electrically conducting film, which are formed on a gate oxide film including a laminate film consisting of a silicon oxide film and a metal oxide thin film, and the first layer electrode and the second layer electrode are separated by insulation with an interelectrode insulating film including a sidewall insulating film formed by a CVD process to cover the lateral wall of the first layer electrode.

Claims

1. A solid-state imaging device comprising:

a semiconductor substrate;

a photoelectric conversion section;

a gate oxide film comprising a two-layer film containing a silicon oxide film and a metal oxide thin film;

a charge transfer section comprising a charge transfer electrode for transferring an electric charge generated in the photoelectric conversion section,

the charge transfer electrode comprising;

a first electrode comprising a first conductive film; and

a second electrode comprising a second conductive film, the first electrode and the second electrode being disposed on a surface of the semiconductor substrate through the gate oxide film and alternatively arranged; and

an interelectrode insulating film which is a sidewall insulating film covering the lateral wall of the first electrode, the interelectrode insulating film separating and insulating the first electrode from the second electrode, wherein the interelectrode insulating film does not extend over the first electrode or over the second electrode.

2. The solid-state imaging device as claimed in claim 1, wherein the metal oxide thin film has high dielectric constant.

3. The solid-state imaging device as claimed in claim 2, wherein the metal oxide thin film comprises at least one element selected from the group consisting of Al, Ti, Hf, Zr, La and Y.

4. The solid-state imaging device as claimed in claim 2, wherein the metal oxide thin film has low dielectric constant.

5. The solid-state imaging device as claimed in claim 1, wherein the silicon oxide film comprises a silicon oxide film formed by a chemical vapor deposition method.

6. The solid-state imaging device as claimed in claim 1, wherein the silicon oxide film comprises a HTO (High-Temperature Oxide) film.