Advanced thermal sensor

• US 7,427,158 B2
• Filed: 01/13/2005
• Issued: 09/23/2008
• Est. Priority Date: 01/13/2005
• Status: Active Grant

• Current Assignee: Kioxia Corporation
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Yoshida, Munehiro
• Primary Examiner(s): VERBITSKY, GAIL KAPLAN
• Application Number:
  US11/034,644
• Publication Number:
  US 20060153277A1
• Time in Patent Office: 1,349 Days
• Field of Search: 374/170, 374/178, 374/1, 327512-513
• US Class Current: 374/172
• CPC Class Codes: G01K 3/005 Circuits arrangements for indicating a predetermined temperature fire detection G08B17/00
• CPC Class Codes: G01K 7/01 using semiconducting elements having PN junctions G01K7/02, G01K7/16, G01K7/30 take precedence

Abstract

Systems and methods for reducing the complexity and size of thermal sensors, where the voltage of a thermally sensitive device is compared to a reference voltage that varies as a function of temperature, rather than being constant. One embodiment comprises a thermal sensing system including a reference voltage generator, a thermal sensor and a comparator. The reference voltage generator is configured to generate a non-constant reference voltage that varies as a known function of temperature. The thermal sensor is configured to generate a sensor voltage that also varies as a known function of temperature. The functions of the reference and sensor voltages cross at a known temperature/voltage. The comparator is configured to compare the sensor voltage and the reference voltage and to generate a comparison output signal based on the comparison of the sensor voltage and the first reference voltage. A transition in this signal indicates the reference temperature.

Claims

1. A thermal sensing system comprising:

a reference voltage generator configured to generate a non-constant first reference voltage that varies as a known first function of temperature;

a thermal sensor configured to generate a sensor voltage that varies as a known second function of temperature, wherein the second function intersects the first function; and

a first comparator configured to

receive the sensor voltage and the first reference voltage,

compare the sensor voltage and the first reference voltage, and

generate a first comparison output signal based on the comparison of the sensor voltage and the first reference voltage;

wherein the thermal sensor and the reference voltage generator are integrated into a single circuit that includes

an operational amplifier,

first, second and third transistors,

first and second PN junctions, wherein the second PN junction has a cross-sectional area greater than a cross-sectional area of the first PN junction, and

first and second resistors,

wherein the source of each of the transistors is tied together and connected to a voltage source,

wherein the gate of each of the transistors is tied together and connected to an output of the operational amplifier,

wherein the drain of the first transistor is coupled to an inverting input of the operational amplifier and the drain of the second transistor is coupled to a non-inverting input of the operational amplifier,

wherein the first PN junction is coupled between the drain of the first transistor and ground,

wherein the first resistor and the first PN junction are coupled in series between the drain of the second transistor and ground,

wherein the second resistor is coupled between the drain of the third transistor and ground, and

wherein the first reference voltage comprises a voltage at the drain of the third transistor.

2. The thermal sensing system of claim 1, wherein the thermal sensor comprises a diode coupled in series with a current source.

3. The thermal sensing system of claim 1, wherein the second resistor comprises a plurality of serially connected resistors and wherein one or more additional reference voltages are generated at one or more corresponding nodes between adjacent ones of the plurality of serially connected resistors.

4. The thermal sensing system of claim 1, wherein the first PN junction comprises a first diode and the second PN junction comprises an array of diodes in parallel.

5. The thermal sensing system of claim 1, wherein the first function is proportional to temperature in Kelvin.

6. The thermal sensing system of claim 1, wherein the first comparator comprises a differential amplifier configured to amplify a difference between the sensor voltage and the reference voltage.

7. The thermal sensing system of claim 1, wherein the reference voltage generator is configured to generate a non-constant second reference voltage that varies as a known third function of temperature, wherein the second function intersects the third function.

8. The thermal sensing system of claim 1, wherein the reference voltage generator includes one or more diodes, and wherein the reference voltage is generated based on voltages across the diodes.

9. A thermal sensing system comprising:

a reference voltage generator configured to generate a non-constant first reference voltage that varies as a known first function of temperature and a non-constant second reference voltage that varies as a known second function of temperature;

a thermal sensor configured to generate a sensor voltage that varies as a known third function of temperature, wherein the third function intersects the first function and the second function;

a first comparator configured to

receive the sensor voltage and the first reference voltage,

compare the sensor voltage and the first reference voltage, and

generate a first comparison output signal based on the comparison of the sensor voltage and the first reference voltage; and

a second comparator configured to

receive the sensor voltage and the second reference voltage,

compare the sensor voltage and the second reference voltage, and

generate a second comparison output signal based on the comparison of the sensor voltage and the second reference voltage.

10. The thermal sensing system of claim 9, further comprising a control circuit configured to receive the first and second comparison output signals and to generate one or more control signals to control operation of an electronic device in response to the first and second comparison output signals.

11. The thermal sensing system of claim 10, wherein the control circuit is configured to generate a control signal that transitions from a non-asserted state to an asserted state when the sensor voltage is greater than the first and second reference voltages and transitions from the asserted state to the non-asserted state when the sensor voltage is less than the first and second reference voltages.

12. A method comprising:

providing a reference voltage source which provides a first reference voltage that increases as a known first function of temperature and is insensitive to manufacturing variations and a second reference voltage that increases as a known third function of temperature and is insensitive to manufacturing variations;

providing a thermal sensor which provides a sensor voltage that decreases as a known second function of temperature and is insensitive to manufacturing variations;

comparing the sensor voltage to the first reference voltage;

generating a first temperature indicator signal that is not asserted when the sensor voltage is less than the first reference voltage and is asserted when the sensor voltage is greater than the first reference voltages;

comparing the sensor voltage to the second reference voltage; and

generating a second temperature indicator signal that is asserted when the sensor voltage is less than the second reference voltage and is not asserted when the sensor voltage is greater than the second reference voltage.

13. The method of claim 12, wherein the first reference voltage is selectable from a plurality of temperature dependent functions.

14. The method of claim 12, wherein the first reference voltage is proportional to temperature in Kelvin.

15. The method of claim 12, wherein generating the temperature indicator signal comprises amplifying a difference signal between the first reference voltage and the sensor voltage.

16. The method of claim 15, wherein the temperature indicator signal is at ground when the first reference voltage is less than the sensor voltage and at Vdd when the first reference voltage is greater than the sensor voltage.

17. The method of claim 12, further comprising generating a control signal that transitions from a non-asserted state to an asserted state when the sensor voltage is greater than the first and second reference voltages and transitions from the asserted state to the non-asserted state when the sensor voltage is less than the first and second reference voltages.

18. The method of claim 12, wherein the reference voltage source includes one or more diodes, and wherein providing the first reference voltage comprises generating the first reference voltage based on voltages across the diodes.