Semiconductor device

• US 7,432,589 B2
• Filed: 04/17/2007
• Issued: 10/07/2008
• Est. Priority Date: 04/19/2006
• Status: Active Grant

• Current Assignee: Nichia Corporation
• Original Assignee: Nichia Corporation
• Inventors: Nii, Ikuya, Ukawa, Hiroaki, Yamamoto, Saiki
• Primary Examiner(s): CLARK, SHEILA V
• Application Number:
  US11/785,380
• Publication Number:
  US 20070246841A1
• Time in Patent Office: 539 Days
• Field of Search: 257/678, 257/687, 257/701, 257/702, 257/703, 257/704, 257/783, 257/784, 257/690
• US Class Current: 257/690
• CPC Class Codes: B29C 45/14639 for obtaining an insulating effect, e.g. for electrical components
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/32245 the item being metallic
• CPC Class Codes: H01L 2224/45124 Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/45147 Copper (Cu) as principal constituent
• CPC Class Codes: H01L 2224/45169 Platinum (Pt) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48097 the kinked part being in proximity to the bonding area outside the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48465 the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
• CPC Class Codes: H01L 2224/48997 Reinforcing structures
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2224/85399 Material
• CPC Class Codes: H01L 2224/85951 Forming additional members, e.g. for reinforcing
• CPC Class Codes: H01L 23/49861 Lead-frames fixed on or encapsulated in insulating substrates H01L23/4985, H01L23/49805 take precedence
• CPC Class Codes: H01L 24/45 of an individual wire connector
• CPC Class Codes: H01L 24/48 of an individual wire connector
• CPC Class Codes: H01L 25/167 comprising optoelectronic devices, e.g. LED, photodiodes
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01023 : Vanadium [V]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/0105 : Tin [Sn]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/07802 : not being an ohmic electrical conductor
• CPC Class Codes: H01L 2924/12035 : Zener diode
• CPC Class Codes: H01L 2924/12041 : LED
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/19107 : off-chip wires
• CPC Class Codes: H01L 31/0203 : Containers; Encapsulations , e.g. encapsulation of photodiodesfor photovoltaic devices H01L31/048; for organic photosensitive devices H10K30/80
• CPC Class Codes: H01L 33/486 : adapted for surface mounting
• CPC Class Codes: H01L 33/62 : Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

The present invention provides a semiconductor device capable of preventing an adhesive for die bonding from flowing to wire bonding area.

The semiconductor device of the present invention comprises a semiconductor element 28 having a pair of electrodes, a housing 12 having the recess 14 for accommodating the semiconductor element 28, a first lead electrode 18 and the second lead electrode 20 which are exposed on the bottom of the recess 14, an adhesive layer 30 for die bonding between the semiconductor element 28 and the first lead electrode 18, and electrically conductive wires 32 for wire bonding between one electrode of the pair of electrodes of the semiconductor element and the first lead electrode 18 and between the other electrode and the second lead electrode 20, wherein the housing 12 has the wall 26 formed to extend across the bottom surface of the recess 14 so as to divide the surface of the first lead electrode 18 into a die bonding area 22 and a wire bonding area 24, and the first lead electrode 18 has the notch 36 which is formed by cutting off a portion of an edge of the first lead electrode 18 and located at least just below the wall 26, while the wall 26 and the bottom portion 40 of the housing 12 are connected to each other through the notch 36.

Claims

1. A semiconductor device comprising:

a semiconductor element having a pair of electrodes;

a housing having a recess for accommodating the semiconductor element;

a first lead electrode and a second lead electrode exposed on the bottom surface of said recess;

an adhesive layer for die bonding between the semiconductor element and the first lead electrode; and

electrically conductive wires for wire bonding between one electrode of the pair of electrodes of the semiconductor element and the first lead electrode and between the other electrode and the second lead electrode,

wherein the housing has at least one wall formed to extend across the bottom surface of the recess so as to divide the surface of the first lead electrode into a die bonding area and a wire bonding area;

the first lead electrode has a notch which is formed by cutting off a portion of an edge of the first lead electrode and located at least just below the wall; and

the wall and the bottom portion of said housing are connected to each other through the notch.

3. The semiconductor device according to claim 1, wherein the first lead electrode further has a groove which is formed in the surface thereof so as to extend along the wall and located at least just below the wall, the bottom of the wall being engaged with the groove.

2. A semiconductor device comprising:

a semiconductor element having a pair of electrodes;

a housing having a recess for accommodating the semiconductor element;

a first lead electrode and a second lead electrode exposed on the bottom surface of the recess;

an adhesive layer for die bonding between the semiconductor element and the first lead electrode; and

electrically conductive wires for wire bonding between one electrode of the pair of electrodes of the semiconductor element and the first lead electrode and between the other electrode and the second lead electrode,

wherein the housing has at least one wall formed to extend across the bottom surface of the recess so as to divide the surface of the first lead electrode into a die bonding area and a wire bonding area;

the first lead electrode has a through hole located at least just below the wall; and

the wall and the bottom portion of the housing are connected to each other through the through hole.

4. The semiconductor device according to claim 2, wherein the first lead electrode further has a groove which is formed in the surface thereof so as to extend along the wall and located at least just below the wall, the bottom of the wall being engaged with the groove.

5. A semiconductor device comprising:

a semiconductor element having a pair of electrodes;

a housing having a recess for accommodating the semiconductor element;

a first lead electrode and a second lead electrode exposed on the bottom surface of the recess;

an adhesive layer for die bonding between the semiconductor element and the first lead electrode; and

electrically conductive wires for wire bonding between one electrode of the pair of electrodes of the semiconductor element and the first lead electrode and between the other electrode and the second lead electrode,

wherein the housing has at least one wall formed to extend across the bottom surface of the recess so as to divide the surface of the first lead electrode into a die bonding area and a wire bonding area;

the first lead electrode has a groove which is formed in the surface thereof so as to extend along the wall and located at least just below the wall; and

the bottom of the wall is engaged with the groove.

6. A semiconductor device comprising:

a semiconductor element having a pair of electrodes;

a housing having a recess for accommodating the semiconductor element;

a first lead electrode and a second lead electrode exposed on the bottom surface of the recess;

an adhesive layer for die bonding between the semiconductor element and the first lead electrode; and

electrically conductive wires for wire bonding between one electrode of the pair of electrodes of the semiconductor element and the first lead electrode and between the other electrode and the second lead electrode,

wherein the housing has at least one wall formed to extend across the bottom surface of the recess so as to divide the surface of the first lead electrode into a die bonding area and a wire bonding area;

the first lead electrode has a notch which is formed by cutting off a portion of an edge of the first lead electrode and located at least just below the wall so that the wall and the bottom portion of the housing are connected to each other through the notch;

the first lead electrode has a groove which is formed in the surface thereof so as to extend along the wall and located just below the wall;

one end of the groove extends to the edge of the first lead electrode and connects with the notch;

the other end of the groove terminates short of the edge of the first lead electrode; and

bottom portion of the wall is engaged with the groove.