InP based long wavelength VCSEL

• US 7,433,381 B2
• Filed: 06/25/2003
• Issued: 10/07/2008
• Est. Priority Date: 06/25/2003
• Status: Expired due to Fees

• Current Assignee: II-VI Delaware, Inc. (Coherent Corp.)
• Original Assignee: Finisar Corporation (II-VI Incorporated)
• Inventors: Wang, Tzu-Yu, Kim, Jin K., Park, Gyoungwon, Ryou, Jae-Hyun, Kwon, Hoki
• Primary Examiner(s): Harvey; Minsun
• Assistant Examiner(s): Nguyen; Phillip
• Application Number:
  US10/606,104
• Publication Number:
  US 20040264541A1
• Time in Patent Office: 1,931 Days
• Field of Search: 372/50.124, 372/92, 372 98- 99
• US Class Current: 372/50.124
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: H01S 5/18311 using selective oxidation
• CPC Class Codes: H01S 5/18313 by oxidizing at least one of the DBR layers
• CPC Class Codes: H01S 5/18333 only above the active layer
• CPC Class Codes: H01S 5/18341 Intra-cavity contacts
• CPC Class Codes: H01S 5/18372 by native oxidation
• CPC Class Codes: H01S 5/2063 obtained by particle bombardment
• CPC Class Codes: H01S 5/34313 with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs

Abstract

A long wavelength vertical cavity surface emitting laser having a substrate, a first mirror situated on the substrate, an active region situated on the first mirror, a second mirror situated on the active region. The first mirror may have several pairs of layers with an oxidized layer in one or more pairs of that mirror. The substrate may include InP and the mirror components may be compatible with the InP. The one or more layers in the first mirror may be oxidized via a trench-like approach or other arrangement.

Claims

1. A long wavelength vertical cavity surface emitting laser comprising:

a substrate;

a first mirror proximate said substrate and having a plurality of layers including at least one pair of layers having a non-oxidized AlGaInAs layer and an oxidized layer, wherein the oxidized layer comprises at least one of oxidized InGaAsP, InAlAs, InAlGaAs, AlAsSb, AlGaAsSb, AlGaPSb or AlPSb;

a cavity proximate to said first mirror;

a second mirror proximate to said cavity, said second mirror comprising a partially oxidized layer for confining current; and

at least two contacts configured to cause current to flow through at least a portion of the vertical cavity surface emitting laser.

2. The laser of claim 1, wherein said first mirror is proximate to an InP substrate.

3. The laser of claim 1, wherein said second mirror comprises a plurality of layers having at least one InP layer.

4. The laser of claim 1, wherein said cavity has at least one quantum well.

5. The laser of claim 4, wherein the at least one quantum well is configured to emit energy at a wavelength greater than 1200 nm.

6. The laser of claim 1, further comprising:

a first electrical contact on said second mirror; and

a second electrical contact on the substrate.

7. The laser of claim 1, further comprising:

an intra-cavity contact layer situated between said first mirror and said cavity;

a first contact on said second mirror; and

a second contact on said intra-cavity contact layer.

8. The laser of claim 1, wherein the plurality of layers of the first mirror has six or fewer pairs of layers.