X-ray detector and method for production of x-ray images with spectral resolution

• US 7,435,965 B2
• Filed: 07/07/2004
• Issued: 10/14/2008
• Est. Priority Date: 07/07/2003
• Status: Expired due to Fees

• Current Assignee: Siemens Healthcare GMBH (Siemens AG)
• Original Assignee: Siemens AG
• Inventors: Fuchs, Manfred, Schardt, Peter, Mattern, Detlef
• Primary Examiner(s): Porta; David P.
• Assistant Examiner(s): LEE, SHUN K
• Application Number:
  US10/886,343
• Publication Number:
  US 20050006588A1
• Time in Patent Office: 1,560 Days
• Field of Search: 250/367, 250/370.11
• US Class Current: 250/367
• CPC Class Codes: G01T 1/20181 Stacked detectors, e.g. for measuring energy and positional information using a combination of different types of scintillation detectors, e.g. phoswich detectors, G01T1/2008
• CPC Class Codes: G01T 1/202 the detector being a crystal

Abstract

The invention concerns an x-ray detector with a plurality of layers arranged one top of one another in the incident direction of the x-rays, whereby each of the layers comprises at least one photodiode and a luminophore layer applied thereon.

Claims

1. An X-ray detector, comprising:

a plurality of layers arranged having a bottom layer and at least a second layer, a third layer and a fourth layer stacked on top of the bottom layer in succession in a direction parallel to a direction of the x-rays, each of the plurality of layers comprising;

at least one photodiode that is produced from a semiconducting organic material and is applied on a film sub-layer, and a luminophore sub-layer applied on the photodiode, and a light-reflecting sub-layer provided on the luminophore sub-layer,

the bottom layer comprising a photodiode matrix formed of a plurality of photodiodes that include the at least one photodiode of the bottom layer;

the second layer comprising a photodiode matrix formed of a plurality of photodiodes that include the at least one photodiode of the second layer;

said third layer comprising a photodiode matrix formed of a plurality of photodiodes that include the at least one photodiode of said third layer;

said fourth layer comprising a photodiode matrix formed of a plurality of photodiodes that include the at least one photodiode of the fourth layer;

the at least one photodiode of the bottom layer being arranged displaced relative to the at least one photodiode of the second layer;

the at least one photodiode of the third layer being arranged displaced relative to the at least one photodiode of the fourth layer, with the at least one photodiode in each of said bottom layer and said third layer overlying one another, and the at least one photodiode in each of said second and fourth layers overlying one another to spectrally resolve an x-ray spectrum that is incident on said plurality of layers; and

an amplifier associated with the at least one photodiode in said bottom layer in said bottom layer directly below the at least one photodiode in said second layer.

2. The X-ray detector according to claim 1, wherein the at least one photodiode in each of the plurality of layers is connected with an amplifier arranged in the appertaining layer comprising at least one of a switching transistor and an amplifier transistor as well as a wire.

3. The X-ray detector according to claim 1, wherein the luminophore layer is fashioned as a closed layer overlaying the photodiode matrix.

4. The X-ray detector according to claim 1, wherein each of the plurality of layers comprises a plurality of discrete detector elements separated from one another that are respectively formed from the at least one photodiode with the luminophore layer applied thereon.

5. The X-ray detector according to claim 1, wherein the luminophore layer has a thickness of 20 to 500 μ

m.

6. The X-ray detector according to claim 5, wherein the luminophore layer has a thickness of 50 to 200 μ

m.

7. The X-ray detector according to claim 1, wherein the at least one photodiode is formed as a thin layer with a thickness of at most 50 μ

m.

8. The X-ray detector according to claim 7, wherein the at least one photodiode is formed as a thin layer with a thickness of between 0.5 to 1.5 μ

m.

9. The X-ray detector according to claim 1, wherein the luminophore layer is produced from a scintillator material selected from the group consisting of gadolinium oxide sulfide, Csl, and Nal.

10. The X-ray detector according to claim 1 wherein the luminophore layer of at least two of the luminophore layers of the plurality of layers are made from different scintillator materials.

11. The X-ray detector according to claim 1, wherein a luminophore layer of an upper, relative to the incident direction, layer of the plurality of layers exhibits a smaller x-ray absorption coefficient than a further luminophore layer of a layer of the plurality of layers arranged underneath.

12. The X-ray detector according to claim 1, wherein the film is a flexible film.

13. A method for utilizing an X-ray detector with spectral resolution, comprising:

providing a plurality of layers including a bottom layer, a second layer, a third layer and a fourth layer, and arranging said plurality of layers with said second, third and fourth layers stacked in succession on top of the bottom layer in a direction parallel to a direction of the x-rays;

forming each of the plurality of layers to comprise

at least one photodiode that is produced from a semiconducting organic material and is applied on a film sub-layer, and a luminophore sub-layer applied on the photodiode, and a light-reflecting sub-layer provided on the luminophore sub-layer,

in the bottom layer, providing a photodiode matrix formed of a plurality of photodiodes that include the at least one photodiode of the bottom layer;

in the second layer, providing a photodiode matrix formed of a plurality of photodiodes that include the at least one photodiode of the second layer;

in said third layer, providing a photodiode matrix formed of a plurality of photodiodes that include the at least one photodiode of the third layer;

in the fourth layer, providing a photodiode matrix formed of a plurality of photodiodes that include the at least one photodiode of the fourth layer;

arranging the at least one photodiode of the bottom layer displaced relative to the at least one photodiode of the second layer;

arranging the at least one photodiode of the third layer displaced relative to the at least one photodiode of the fourth layer;

arranging the at least one photodiode of the third layer to over layer to overlap the at least one photodiode of the bottom layer and arranging the at least one photodiode of the fourth layer to overlap the at least one photodiode of the second layer to produce an x-ray detector that spatially resolves an x-ray spectrum incident on said plurality of layers; and

providing an amplifier associated with the at least one photodiode in said bottom layer is arranged in said bottom layer directly below the at least one photodiode in said second layer; and

measuring the x-ray spectrum in a spectrally resolved manner with said x-ray detector to produce the x-ray spectrum; and

producing a spectrally-resolved x-ray image.

14. The method according to claim 13, further comprising:

adding signals measured with overlapping photodiodes of the x-ray detector for spatially-resolved measuring of the x-ray spectrum.

15. The method according to claim 14, further comprising:

evaluating, depending on a z-position of a layer, the signals measured with the overlapping photodiodes for spatially-resolved measurement of the x-ray spectrum.

16. The method according to claim 13, further comprising:

producing a false-color image as the a spectrally-resolved x-ray image.

17. A method as claimed in claim 13 comprising:

forming each of said bottom layer and said second, third and fourth layers by;

applying said at least one photodiode produced from a semiconducting organic material on a film sub-layer;

applying a luminophore sub-layer on said at least one photodiode; and

applying a light-reflecting sub-layer on the luminophore sub-layer.