Nonplanar semiconductor device with partially or fully wrapped around gate electrode and methods of fabrication

• US 7,456,476 B2
• Filed: 06/27/2003
• Issued: 11/25/2008
• Est. Priority Date: 06/27/2003
• Status: Expired due to Fees

• Current Assignee: Tahoe Research Limited (f/k/a Learndale Limited) (Vector Capital Corporation)
• Original Assignee: Intel Corporation
• Inventors: Chau, Robert S., Doyle, Brian S., Rios, Rafael, Hareland, Scott A., Datta, Suman, Linton, Tom
• Primary Examiner(s): Menz; Douglas M.
• Assistant Examiner(s): Such; Matthew W
• Application Number:
  US10/607,769
• Publication Number:
  US 20060172497A1
• Time in Patent Office: 1,978 Days
• Field of Search: 257345-354, 257/327, 257/E29.242, 257/E29.255, 257/E29.264, 257/E29.273, 257/E29.275, 257/E29.276, 438/151, 438/157, 438/164, 438/280, 438/283, 438/284
• US Class Current: 257/349
• CPC Class Codes: H01L 29/42384 for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
• CPC Class Codes: H01L 29/42392 fully surrounding the channel, e.g. gate-all-around
• CPC Class Codes: H01L 29/66545 using a dummy, i.e. replacement gate in a process wherein at least a part of the final gate is self aligned to the dummy gate
• CPC Class Codes: H01L 29/66772 Monocristalline silicon transistors on insulating substrates, e.g. quartz substrates H01L29/66666 takes precedence; thin film FinFETs H01L29/66795
• CPC Class Codes: H01L 29/66795 with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
• CPC Class Codes: H01L 29/785 having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET

Abstract

A nonplanar semiconductor device and its method of fabrication is described. The nonplanar semiconductor device includes a semiconductor body having a top surface opposite a bottom surface formed above an insulating substrate wherein the semiconductor body has a pair laterally opposite sidewalls. A gate dielectric is formed on the top surface of the semiconductor body on the laterally opposite sidewalls of the semiconductor body and on at least a portion of the bottom surface of semiconductor body. A gate electrode is formed on the gate dielectric, on the top surface of the semiconductor body and adjacent to the gate dielectric on the laterally opposite sidewalls of semiconductor body and beneath the gate dielectric on the bottom surface of the semiconductor body. A pair source/drain regions are formed in the semiconductor body on opposite sides of the gate electrode.

Claims

1. A nonplanar semiconductor device comprising:

a semiconductor body having a top surface opposite a bottom surface formed above an insulating substrate, wherein said semiconductor body has a pair of laterally opposite sidewalls;

a gate dielectric formed on said top surface of said semiconductor body, on only a portion of said bottom surface of said semiconductor body, and on said laterally opposite sidewalls of said semiconductor body;

a gate electrode formed on said gate dielectric on said top surface of said semiconductor body, adjacent to said gate dielectric on said laterally opposite sidewalls of said semiconductor body, and beneath said gate dielectric on said portion of said bottom surface of said semiconductor body, wherein said gate electrode has a pair of laterally opposite sidewalls oriented perpendicularly to said laterally opposite sidewalls of said semiconductor body, said gate electrode having a top portion and a bottom portion, and wherein said bottom portion of said gate electrode undercuts said top portion of said gate electrode along said pair of laterally opposite sidewalls of said gate electrode; and

a pair of source/drain regions formed in said semiconductor body on opposite sides of said gate electrode.

2. The semiconductor device of claim 1 wherein said semiconductor body is a single crystalline silicon film.

3. The semiconductor device of claim 1 wherein said semiconductor body is selected from the group consisting of germanium, silicon germanium, gallium arsenide, InSb, GaP, GaSb and carbon nanotubes.

4. The semiconductor device of claim 1 wherein said gate electrode comprises a material selected from the group consisting of polycrystalline silicon, tungsten, tantalum, titanium, and metal nitrides.

5. The semiconductor device of claim 1 wherein said insulating substrate comprises an oxide film formed on a monocrystalline silicon substrate.

6. The semiconductor device of claim 1 wherein said semiconductor device further includes at least one additional semiconductor body having a top surface and a bottom surface, and a pair of laterally opposite sidewalls wherein a gate dielectric layer is formed on said top surface, said bottom surface and said sidewalls of said at least one additional semiconductor body, and wherein said gate electrode is formed on said gate dielectric on said top surface of said at least one additional semiconductor body, and adjacent to said gate dielectric on said laterally opposite sidewalls of said at least one additional semiconductor body, and beneath the gate dielectric on said bottom surface of said at least one additional semiconductor body.

7. A nonplanar semiconductor device comprising:

a semiconductor body having a top surface opposite a bottom surface, said semiconductor body having laterally opposite sidewalls formed above an insulating substrate;

a gate dielectric formed on said top surface of said semiconductor body, on said laterally opposite sidewalls of said semiconductor body, and on only a portion of said bottom surface of said semiconductor body;

a gate electrode formed on said gate dielectric on said top surface of said semiconductor body, adjacent to said gate dielectric on said laterally opposite sidewalls of said semiconductor body, and beneath said gate dielectric on said portion of said bottom surface of said semiconductor body, wherein said gate electrode has a pair of laterally opposite sidewalls oriented perpendicularly to said laterally opposite sidewalls of said semiconductor body, said gate electrode having a top portion above said insulating substrate and a bottom portion formed in said insulating substrates and wherein said bottom portion of said gate electrode has a larger width than said top portion of said gate electrode along said pair of laterally opposite sidewalls of said gate electrode ; and

a pair of source/drain regions formed in said semiconductor body on opposite sides of said gate electrode.

8. The semiconductor device of claim 7 wherein said semiconductor body is a single crystalline silicon film.

9. The semiconductor device of claim 7 wherein said semiconductor body is selected from the group consisting of germanium, silicon germanium, gallium arsenide, InSb, GaP, GaSb and carbon nanotubes.

10. The semiconductor device of claim 7 wherein said gate electrode comprises a material selected from the group consisting of polycrystalline silicon, tungsten, tantalum, titanium and metal nitrides.

11. The semiconductor device of claim 7 wherein said insulating substrate comprises an oxide film formed on a monocrystalline silicon substrate.

12. The semiconductor device of claim 7 wherein said semiconductor device further includes at least one additional semiconductor body having a top surface and a bottom surface, and a pair of laterally opposite sidewalls wherein a gate dielectric layer is formed on said top surface, said bottom surface and said sidewalls of said at least one additional semiconductor body, and wherein said gate electrode is formed on said gate dielectric on said top surface of said at least one additional semiconductor body, and adjacent to said gate dielectric on said laterally opposite sidewalls of said at least one additional semiconductor body, and beneath the gate dielectric on said bottom surface of said at least one additional semiconductor body.