Insulated gate semiconductor device with small feedback capacitance and manufacturing method thereof

DC
  • US 7,459,751 B2
  • Filed: 09/01/2005
  • Issued: 12/02/2008
  • Est. Priority Date: 09/07/2004
  • Status: Expired due to Fees
First Claim
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1. An insulated gate semiconductor device, comprising:

  • a first region having a gate electrode region and a first insulating film region surrounding the gate electrode region;

    a semiconductor region including a channel forming region and provided to oppose the gate electrode region with the first insulating film region between the semiconductor region and the gate electrode region; and

    a second region buried in the semiconductor region so as to reach a vertical position deeper than the first region and being adjacent to and in contact with the first region, the second region having a conductor region and a second insulating film region to separate the conductor region from the semiconductor region,wherein the first region is buried in first groove-like removed portions of the semiconductor region; and

    wherein the second region is buried in second groove-like removed portions of the semiconductor region, and provided to oppose at least the channel forming region of the semiconductor region through the first region.

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