Positioning of nanoparticles and fabrication of single election devices
First Claim
1. A single electron structure comprising:
- a substrate having an upper surface;
a first dielectric layer formed on the upper surface of the substrate;
a second dielectric layer defined with an exposed portion and deposited on the first dielectric layer and of a different material than the first dielectric layer;
a third dielectric layer defined and in contact with the second dielectric and of a different material than the second dielectric layer;
at least one monolayer having self-assembling molecules attracted to and in contact with the exposed portion of the second dielectric layer;
one or more nanoparticles attracted to and in contact with the at least one monolayer; and
a fourth dielectric layer deposited on a portion of the third dielectric layer and the nanoparticles thereby providing a single electron structure exhibiting single electron behavior.
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Accused Products
Abstract
The present invention includes single electron structures and devices comprising a substrate having an upper surface, one or more dielectric layers formed on the upper surface of the substrate and having at least one exposed portion, at least one monolayer of self-assembling molecules attracted to and in contact with the at least one exposed portion of only one of the one or more dielectric layers, one or more nanoparticles attracted to and in contact with the at least one monolayer, and at least one tunneling barrier in contact with the one or more nanoparticles. Typically, the single electron structure or device formed therefrom further comprise a drain, a gate and a source to provide single electron behavior, wherein there is a defined gap between source and drain and the one or more nanoparticles is positioned between the source and drain.
145 Citations
53 Claims
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1. A single electron structure comprising:
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a substrate having an upper surface; a first dielectric layer formed on the upper surface of the substrate; a second dielectric layer defined with an exposed portion and deposited on the first dielectric layer and of a different material than the first dielectric layer; a third dielectric layer defined and in contact with the second dielectric and of a different material than the second dielectric layer; at least one monolayer having self-assembling molecules attracted to and in contact with the exposed portion of the second dielectric layer; one or more nanoparticles attracted to and in contact with the at least one monolayer; and a fourth dielectric layer deposited on a portion of the third dielectric layer and the nanoparticles thereby providing a single electron structure exhibiting single electron behavior. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A method for fabricating a single electron structure comprising the steps of:
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providing a substrate having an upper surface; forming a first dielectric layer on the upper surface of the substrate; depositing and defining a second dielectric layer in contact with the first dielectric layer, wherein the second dielectric layer is defined by an exposed portion and is a different material than the first dielectric layer; forming and defining a third dielectric layer in contact with the second dielectric layer, wherein the third dielectric layer is a different material than the second dielectric layer; having a monolayer of self-assembling molecules that selectively form on the exposed portion of the second dielectric layer; providing one or more nanoparticles that contact the self-assembling molecules thereby providing a single electron structure exhibiting single electron behavior. - View Dependent Claims (16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29)
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30. A single electron structure comprising:
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a substrate having an upper surface; a first dielectric layer formed on the upper surface of the substrate; a second dielectric layer defined with exposed portions and deposited on the first dielectric layer and of a different material than the first dielectric layer; a third dielectric layer defined and in contact with the second dielectric and of a different material than the second dielectric layer; at least one self-assembled monolayer attracted to and in contact with exposed portions of the second dielectric layer; one or more nanoparticles attracted to and in contact with the at least one self-assembled monolayer thereby providing a single electron memory device exhibiting single electron memory behavior. - View Dependent Claims (31, 32, 33, 34, 35, 36, 37, 38, 39, 40)
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41. A method of selective positioning of nanoparticles on a single electron structure comprising the steps of:
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forming a self-assembled monolayer on a portion of a single electron structure, wherein the self-assembled monolayer is capable of selectively recognizing only a portion of the single electron structure; and contacting the self-assembled monolayer with at least one nanoparticle to provide a single electron structure exhibiting single electron behavior. - View Dependent Claims (42, 43, 44, 45, 46, 48, 49)
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47. A single electron structure comprising:
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a substrate having an upper surface; one or more dielectric layers formed on the upper surface of the substrate and having at least one exposed portion; at least one monolayer of self-assembling molecules attracted to and in contact with the at least one exposed portion of only one of the one or more dielectric layers; one or more nanoparticles attracted to and in contact with the at least one monolayer; at least one tunneling barrier in contact with the one or more nanoparticles to provide single electron behavior. - View Dependent Claims (50)
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51. A single electron structure comprising:
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a substrate having an upper surface; one or more dielectric layers formed on the upper surface of the substrate and having at least one exposed portion; at least one monolayer of self-assembling molecules attracted to and in contact with the at least one exposed portion of only one of the one or more dielectric layers; and one or more nanoparticles attracted to and in contact with the at least one monolayer; a drain, a gate and a source to provide single electron behavior. - View Dependent Claims (52, 53)
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Specification