Analog phase change memory
First Claim
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1. A method comprising:
- forming an analog memory using a phase change material; and
selectively enabling either digital or analog data to be stored in said memory.
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Abstract
An analog memory may be formed using a phase change material. The phase change material may assume one of a number of resistance states which defines a specific analog characteristic to be stored.
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Citations
22 Claims
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1. A method comprising:
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forming an analog memory using a phase change material; and selectively enabling either digital or analog data to be stored in said memory. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A memory comprising:
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a phase change material; a circuit to write analog data using said phase change material; and a circuit to selectively enable either digital or analog data to be stored in said memory. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18)
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19. A system comprising:
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a processor; a wireless interface coupled to said processor; a semiconductor memory coupled to said processor, said memory including a phase change material, a circuit to write analog data for storage using said phase change material, and a circuit to selectively enable either digital or analog data to be stored in said memory. - View Dependent Claims (20, 21, 22)
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Specification