3D IC method and device

  • US 7,485,968 B2
  • Filed: 08/11/2005
  • Issued: 02/03/2009
  • Est. Priority Date: 08/11/2005
  • Status: Active Grant
First Claim
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1. A structure, comprising:

  • a first element having a first substrate, a first insulating layer disposed on said first substrate containing silicon and at least one of oxygen and nitrogen, and a first contact structure disposed in said first insulating layer;

    a second element having a second substrate, a second insulating layer disposed on said second substrate containing silicon and at least one of oxygen and nitrogen, and a second contact structure disposed in said second insulating layer;

    said first insulating layer directly bonded to said second insulating layer;

    said first contact structure directly connected to said second contact structure; and

    an interconnect structure disposed in a via and connected to said first contact structure.

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