CMOS image sensor and method for manufacturing the same
First Claim
1. A method for manufacturing a CMOS image sensor, the method comprising the steps of:
- forming an isolation layer on a semiconductor substrate so as to define an active region for a unit pixel;
forming at least one transistor gate structure on said semiconductor substrate;
forming a passivation layer over a boundary between said isolation layer and the active region; and
forming a diffusion region for a photodiode by implanting impurities into a portion of the active region, wherein said diffusion region is located a distance away from said isolation region by an edge portion, wherein impurities are not implanted into the edge portion, wherein the edge portion has a width of 50 μ
m or more, and wherein the passivation layer is not formed on the diffusion region.
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Abstract
A CMOS image sensor and a manufacturing method thereof are disclosed. The gates of the transistors are formed in an active region of a unit pixel, and at the same time, a passivation layer is formed on an edge portion of the active region of a photodiode to have the same laminate structure as the gates of the transistors. Impurities for a diffusion region of the photodiode are ion-implanted into the active region for the photodiode, after the laminate structure is formed. The passivation layer prevents the edge portion from being damaged by ion implantation at the boundary or interface between the photodiode diffusion region and an isolation layer, which reduces dark current and/or leakage current of the CMOS image sensor.
14 Citations
10 Claims
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1. A method for manufacturing a CMOS image sensor, the method comprising the steps of:
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forming an isolation layer on a semiconductor substrate so as to define an active region for a unit pixel; forming at least one transistor gate structure on said semiconductor substrate; forming a passivation layer over a boundary between said isolation layer and the active region; and forming a diffusion region for a photodiode by implanting impurities into a portion of the active region, wherein said diffusion region is located a distance away from said isolation region by an edge portion, wherein impurities are not implanted into the edge portion, wherein the edge portion has a width of 50 μ
m or more, and wherein the passivation layer is not formed on the diffusion region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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Specification