×

CMOS image sensor and method for manufacturing the same

  • US 7,488,617 B2
  • Filed: 04/10/2007
  • Issued: 02/10/2009
  • Est. Priority Date: 09/22/2003
  • Status: Expired due to Fees
First Claim
Patent Images

1. A method for manufacturing a CMOS image sensor, the method comprising the steps of:

  • forming an isolation layer on a semiconductor substrate so as to define an active region for a unit pixel;

    forming at least one transistor gate structure on said semiconductor substrate;

    forming a passivation layer over a boundary between said isolation layer and the active region; and

    forming a diffusion region for a photodiode by implanting impurities into a portion of the active region, wherein said diffusion region is located a distance away from said isolation region by an edge portion, wherein impurities are not implanted into the edge portion, wherein the edge portion has a width of 50 μ

    m or more, and wherein the passivation layer is not formed on the diffusion region.

View all claims
  • 0 Assignments
Timeline View
Assignment View
    ×
    ×