Device for detecting emission light of micro-object

• US 7,489,401 B2
• Filed: 02/28/2005
• Issued: 02/10/2009
• Est. Priority Date: 03/01/2004
• Status: Expired due to Fees

• Current Assignee: National Institute of Advanced Industrial Science and Technology (Government of Japan)
• Original Assignee: National Institute of Advanced Industrial Science and Technology (Government of Japan)
• Inventors: Itatani, Taro, Kamei, Toshihiro
• Primary Examiner(s): Chowdhury; Tarifur R
• Assistant Examiner(s): COOK, JONATHON
• Application Number:
  US11/066,261
• Publication Number:
  US 20050237524A1
• Time in Patent Office: 1,443 Days
• Field of Search: 356317-318, 356/417, 2504581-4612, 422 8207- 8208, 436/172
• US Class Current: 356/417
• CPC Class Codes: G01N 21/6428 Measuring fluorescence of fluorescent products of reactions or of fluorochrome labelled reactive substances, e.g. measuring quenching effects, using measuring "optrodes" in vivo A61B5/00; immunoassay G01N33/53
• CPC Class Codes: G01N 21/645 Specially adapted constructive features of fluorimeters
• CPC Class Codes: G01N 21/6454 using an integrated detector array

Abstract

In the detection of fluorescence Lf emitted by a micro-object irradiated with an excitation light Le by a semiconductor light-detecting element 20, a converging microlens 62 for converging the excitation light Le elevating the optical density thereof and irradiating the micro-object with the light, causing the micro-object to generate fluorescence Lf due to two-photon absorption, is inserted partway along the light path of the excitation light Le. This enables the fluorescence Lf emitted by the micro-object to be detected with high sensitivity.

Claims

1. A micro-object emission light detecting device for detecting with a semiconductor light detecting element emission light emitted in the form of fluorescence or phosphorescence from a micro-object irradiated with excitation light emitted from an excitation light source;

wherein said semiconductor light detecting element and said excitation light source are disposed coaxially or on one side, said micro-object emission light detecting device comprising;

a Q switch laser that generates a short pulse laser in response to the irradiation with the excitation light, elevates a peak light intensity instantaneously, and irradiates the micro-object with a beam of short pulse laser as the excitation light; and

a converging microlens that is inserted partway along a light path of the excitation light to converge the excitation light and elevate a peak light intensity of the excitation light and that irradiates the micro-object with the excitation light having the peak light intensity elevated;

whereby emission light is generated from the micro-object due to two-photon absorption and detected with the semiconductor light detecting element

wherein said Q switch laser is a passive type comprising a gain medium and a saturable absorber, and

wherein the gain medium of said Q switch laser is a semiconductor with quantum well structure and the saturable absorber of said Q switch laser is also a semiconductor with quantum well structure.

2. A micro-object emission light detecting device according to claim 1, wherein the emission light emitted by said micro-object impinges on said semiconductor light detecting element via an optical filter possessing selective transmittance to said emission light.

3. A micro-object emission light detecting device according to claim 2, wherein the wavelength of said excitation light is a wavelength in the near infrared region.

4. A micro-object emission light detecting device according to claim 2, provided with a microlens for collecting emission light emitted from said micro-object, paralleling the collected light, and guiding the paralleled light to said optical filter.

5. A micro-object emission light detecting device according to claim 2, wherein at least the part of the side wall of said optical filter and said semiconductor light detecting element on which scattered light of said excitation light might fall incident is covered with a shielding layer.

6. A micro-object emission light detecting device according to claim 2, wherein an emission light detecting module comprised of said semiconductor light-detecting element and said optical filter, when viewed in a plan view, has a solid form of a circular or a polygonal shape with n vertices wherein n denotes an integer of not less than 3, said solid form has a part with a through hole of a circular or a polygonal shape with n vertices , and said excitation light passes through the interior of said through hole.

7. A micro-object emission light detecting device according to claim 2, wherein said semiconductor light detecting element is divided into a plurality of parts and the emission light emitted by said micro-object is passed through optical filters with different spectral characteristics and is impinged on each divided part of said semiconductor light detecting element.

8. A micro-object emission light detecting device according to claim 1, wherein said excitation light source is a surface emitting laser diode.

9. A micro-object emission light detecting device according to claim 1, wherein said semiconductor light-detecting element is a photodiode fabricated using a-Si:

H material.

10. A micro-object emission light detecting device according to claim 1, wherein said semiconductor light-detecting element is a photoconductor fabricated using a-Si:

H material.

11. A micro-object emission light detecting device according to claim 1, wherein said excitation light source and said semiconductor light-detecting element are integrated on the same substrate.

12. A micro-object emission light detecting device according to claim 1, characterized by said micro-object being a fluorophore or a semiconductor quantum dot or a micro-sample labeled with a fluorophore or a semiconductor quantum dot.

13. A micro-object emission light detecting device according to claim 1, wherein the wavelength of said excitation light is longer than the wavelength corresponding to a band gap of said semiconductor light detecting element and the wavelength of said emission light is shorter than the wavelength corresponding to a band gap of said semiconductor light detecting element.

14. A micro-object emission light detecting device according to claim 1, wherein the gain medium of said Q switch laser and the saturable absorber are monolithically integrated on the same semiconductor substrate.

15. A micro-object emission light detecting device for detecting with a semiconductor light detecting element emission light emitted in the form of fluorescence or phosphorescence from a micro-object irradiated with excitation light emitted from an excitation light source;

wherein said semiconductor light detecting element and said excitation light source are disposed coaxially or on one side, said micro-object emission light detecting device comprising;

a Q switch laser that generates a short pulse laser in response to the irradiation with the excitation light, elevates a peak light intensity instantaneously, and irradiates the micro-object with a beam of short pulse laser as the excitation light; and

a converging microlens that is inserted partway along a light path of the excitation light to converge the excitation light and elevate a peak light intensity of the excitation light and that irradiates the micro-object with the excitation light having the peak light intensity elevated;

whereby emission light is generated from the micro-object due to two-photon absorption and detected with the semiconductor light detecting element,

wherein said Q switch laser is a passive type comprising a gain medium and a saturable absorber

wherein the gain medium of said Q switch laser and the saturable absorber are quantum wells formed of InGaAs grown on a GaAs substrate, and the composition of the In and the Ga and the thickness of the InGaAs quantum well layer is so fixed as to give rise to an overlap between the gain curve of said gain medium and the absorption band of said saturable absorber.