Semiconductor device

DC
  • US 7,492,031 B2
  • Filed: 05/16/2006
  • Issued: 02/17/2009
  • Est. Priority Date: 12/25/2003
  • Status: Expired due to Fees
First Claim
Patent Images

1. A semiconductor device comprising:

  • a first base layer of a first conductive type which has a first surface and a second surface;

    a second base layer of a second conductive type which is formed on the first surface;

    a source layer of a first conductive type which is formed on a surface region of the second base layer;

    an emitter layer of the second conductive type which is formed on the second surface;

    a first gate electrode which is formed on the second base layer via a gate insulating layer between the source layer and the first base layer;

    a second gate electrode which is formed on the first base layer via a gate insulating layer and is formed at a site apart from the first gate electrode;

    an emitter electrode which is formed on the second base layer and the source layer; and

    a collector electrode which is formed on the emitter layer.

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