Method for making through-hole conductors for semiconductor substrates

• US 7,494,925 B2
• Filed: 02/23/2004
• Issued: 02/24/2009
• Est. Priority Date: 02/23/2004
• Status: Expired due to Fees

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Hiatt, William M.
• Primary Examiner(s): MENZ, LAURA MARY
• Application Number:
  US10/784,436
• Publication Number:
  US 20050186791A1
• Time in Patent Office: 1,828 Days
• Field of Search: 438/667, 438/674, 438/629
• US Class Current: 438/667
• CPC Class Codes: H01L 21/288 from a liquid, e.g. electrolytic deposition
• CPC Class Codes: H01L 21/2885 using an external electrical current, i.e. electro-deposition
• CPC Class Codes: H01L 21/76898 formed through a semiconductor substrate

Abstract

A method, structure and system for forming a through-hole conductor in a semiconductor substrate includes forming a hole having an inner surface from a first side of the semiconductor substrate to a second side of the semiconductor substrate and plating the inner surface of the semiconductor substrate to form a conductive element when a plating solution is forced from the first side of the semiconductor substrate to the second side of the semiconductor substrate through the hole. The hole is plated in a generally planar plating topology from the first side to the second side of the semiconductor substrate. The through-hole conductor may be formed in a plating system where the semiconductor substrate forms at least a partial partition between a higher pressure bath and a lower pressure bath with the plating solution passing through the hole causing plating within the inner surface of the hole.

Claims

1. A method for electrically coupling a first side of a semiconductor substrate to a second side of said semiconductor substrate, comprising:

forming a hole having an inner surface from a first side of a semiconductor substrate to a second side of said semiconductor substrate;

forming an insulating layer from said first side to said second side of said semiconductor substrate on said inner surface in said hole; and

plating over said insulating layer on said inner surface of said semiconductor substrate to form a plated conductive element by forcing a plating solution from said first side of said semiconductor substrate and exiting said plating solution from said second side of said semiconductor substrate through said hole.

2. The method of claim 1, wherein forming said hole comprises at least one of ablating, mechanically drilling and chemically etching a portion of said semiconductor substrate from said first side to said second side.

3. The method of claim 1, further comprising loading said semiconductor substrate into a plating fixture, said semiconductor substrate and said plating fixture cooperatively directing flow of a plating material through said hole of said semiconductor substrate.

4. The method of claim 1, wherein said plating comprises electroplating over said insulating layer on said inner surface of said semiconductor substrate defined by said hole.

5. The method of claim 1, wherein plating comprises electroless plating over said insulating layer on said inner surface of said semiconductor substrate defined by said hole.

6. The method of claim 1, further comprising forming a conductive cap on at least one end of said plated conductive element.

7. The method of claim 1, further comprising etching one of said first and second sides of said substrate to expose at least one end portion of said plated conductive element.

8. The method of claim 7, further comprising forming a conductive cap over said at least one end portion of said plated conductive element.

9. The method of claim 1, wherein said hole is between approximately 50 microns and 700 microns in diameter.