Resistive memory cell array with common plate

  • US 7,495,951 B1
  • Filed: 04/27/2006
  • Issued: 02/24/2009
  • Est. Priority Date: 04/27/2006
  • Status: Active Grant
First Claim
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1. A method of changing the state of a resistive memory device which is capable of adopting relatively higher and lower resistance states, the resistive memory device comprising first and second electrodes and an active layer between the first and second electrodes, the method comprising applying an electrical potential across the electrodes from higher to lower potential in a direction from one electrode to the other to change the state of the resistive memory device from one state to the other, said direction being the same as that in which said electrical potential would be applied across the electrodes to change the state of the resistive memory device from said other state to said one state.

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