Memory chip architecture with high speed operation
First Claim
1. A semiconductor memory device comprising:
- at least one data transmission block including data I/O pads arranged in a major-axis side of the semiconductor memory device;
a command and address transmission block including address and command input pads arranged in at least one minor-axis side of the semiconductor memory device;
a global line block, arranged in a center of the semiconductor memory device, for transmitting inputted command and address;
at least one bank area, arranged between the global line block and the data transmission block, each bank area containing a plurality of banks, a plurality of data I/O blocks located closer to the data transmission block than the global line blocks—
and a plurality of control blocks located closer to the global line block than the data transmission block; and
decoding control blocks corresponding to the plurality of banks, respectively,wherein the inputted command and address are transmitted to the decoding control blocks via the center of the semiconductor memory device.
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Abstract
A semiconductor memory device includes at least one data transmission block including data I/O pads arranged in a major-axis side of the semiconductor memory device; a command and address transmission block including address and command input pads arranged in at least one minor-axis side of the semiconductor memory device; a global line block, arranged in a center of the semiconductor memory device, for transmitting inputted command and address; and at least one bank area, arranged between the global line block and the data transmission block, each bank area containing plural data I/O blocks located in a side of the data transmission block and plural control blocks located in a side of the global line block.
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Citations
10 Claims
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1. A semiconductor memory device comprising:
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at least one data transmission block including data I/O pads arranged in a major-axis side of the semiconductor memory device; a command and address transmission block including address and command input pads arranged in at least one minor-axis side of the semiconductor memory device; a global line block, arranged in a center of the semiconductor memory device, for transmitting inputted command and address; at least one bank area, arranged between the global line block and the data transmission block, each bank area containing a plurality of banks, a plurality of data I/O blocks located closer to the data transmission block than the global line blocks—
and a plurality of control blocks located closer to the global line block than the data transmission block; anddecoding control blocks corresponding to the plurality of banks, respectively, wherein the inputted command and address are transmitted to the decoding control blocks via the center of the semiconductor memory device. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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Specification