Semiconductors bonded on glass substrates
First Claim
Patent Images
1. A method for making a semiconductor on insulator structure comprising:
- providing a glass substrate; and
bonding a semiconductor layer to the glass substrate such that the semiconductor layer bonded to the glass substrate forms a semiconductor on insulator wafer for device processing, the semiconductor layer having a thickness such that the semiconductor layer does not yield due to temperature-induced strain at device processing temperatures.
7 Assignments
0 Petitions
Accused Products
Abstract
A method includes providing a glass substrate and bonding a semiconductor layer to the glass substrate. The semiconductor layer is formed to a thickness such that it does not yield due to temperature-induced strain at device processing temperatures.
228 Citations
29 Claims
-
1. A method for making a semiconductor on insulator structure comprising:
-
providing a glass substrate; and bonding a semiconductor layer to the glass substrate such that the semiconductor layer bonded to the glass substrate forms a semiconductor on insulator wafer for device processing, the semiconductor layer having a thickness such that the semiconductor layer does not yield due to temperature-induced strain at device processing temperatures. - View Dependent Claims (2, 3, 4, 5, 6, 7)
-
-
8. A method for making a semiconductor on insulator structure comprising:
-
providing a glass substrate; and performing a bonding cut process on a semiconductor wafer and the glass substrate to provide a semiconductor layer bonded to the glass substrate such that the semiconductor layer bonded to the glass substrate forms a semiconductor on insulator wafer for device processing, the semiconductor layer having a thickness such that the semiconductor layer does not yield due to temperature-induced strain at device processing temperatures. - View Dependent Claims (9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
-
-
19. A method including manufacturing a semiconductor on insulator structure, the method comprising:
-
providing a glass substrate; performing a bonding cut process on a semiconductor wafer and the glass substrate to provide a semiconductor layer bonded to the glass substrate, the semiconductor layer having a thickness such that the semiconductor layer does not yield due to temperature-induced strain at device processing temperatures; and using a remaining semiconductor wafer resulting from the bonding cut to bond a second semiconductor layer to another glass substrate. - View Dependent Claims (20, 21, 22, 23, 24, 25, 26, 27, 28, 29)
-
Specification