Gap tuning for surface micromachined structures in an epitaxial reactor
First Claim
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1. A device comprising:
- a substrate;
a top layer having at least two opposing faces extending over an exposed portion of the substrate;
at least two epitaxially deposited layers, each of the at least two epitaxially deposited layers situated on a respective one of the at least two opposing faces, a combined thickness of the at least two epitaxially deposited layers tuning a gap between the at least two opposing faces; and
a sacrificial layer deposited on a first portion of the substrate layer;
wherein;
the top layer includes at least one function layer epitaxially deposited on at least a second portion of the sacrificial layer;
the sacrificial layer includes silicon dioxide; and
during the deposition of the gap narrowing layer, deposition on the sacrificial layer is selectively avoided by adjusting at least one of a temperature, a pressure, and a gas composition of the epitaxial reactor.
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Abstract
A device includes a top layer having at least two opposing faces, and at least two epitaxially deposited layers, each of the at least two epitaxially deposited layers situated on a respective one of the at least two opposing faces, a combined thickness of the at least two epitaxially deposited layers tuning a gap between the at least two opposing faces.
12 Citations
9 Claims
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1. A device comprising:
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a substrate; a top layer having at least two opposing faces extending over an exposed portion of the substrate; at least two epitaxially deposited layers, each of the at least two epitaxially deposited layers situated on a respective one of the at least two opposing faces, a combined thickness of the at least two epitaxially deposited layers tuning a gap between the at least two opposing faces; and a sacrificial layer deposited on a first portion of the substrate layer; wherein; the top layer includes at least one function layer epitaxially deposited on at least a second portion of the sacrificial layer; the sacrificial layer includes silicon dioxide; and during the deposition of the gap narrowing layer, deposition on the sacrificial layer is selectively avoided by adjusting at least one of a temperature, a pressure, and a gas composition of the epitaxial reactor. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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Specification