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Gap tuning for surface micromachined structures in an epitaxial reactor

  • US 7,507,669 B2
  • Filed: 08/12/2004
  • Issued: 03/24/2009
  • Est. Priority Date: 12/31/2002
  • Status: Active Grant
First Claim
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1. A device comprising:

  • a substrate;

    a top layer having at least two opposing faces extending over an exposed portion of the substrate;

    at least two epitaxially deposited layers, each of the at least two epitaxially deposited layers situated on a respective one of the at least two opposing faces, a combined thickness of the at least two epitaxially deposited layers tuning a gap between the at least two opposing faces; and

    a sacrificial layer deposited on a first portion of the substrate layer;

    wherein;

    the top layer includes at least one function layer epitaxially deposited on at least a second portion of the sacrificial layer;

    the sacrificial layer includes silicon dioxide; and

    during the deposition of the gap narrowing layer, deposition on the sacrificial layer is selectively avoided by adjusting at least one of a temperature, a pressure, and a gas composition of the epitaxial reactor.

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