Semiconductor module

• US 7,514,783 B2
• Filed: 08/31/2005
• Issued: 04/07/2009
• Est. Priority Date: 08/31/2004
• Status: Expired due to Fees

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Takei, Hiroshi, Yamada, Tatsuya, Nakagawa, Akio, Toyoshima, Masaki, Kawano, Tomohiro, Takahashi, Morio, Saito, Yasuhito, Yoshikawa, Noriaki, Endo, Yoshiki, Urase, Masahiro, Arai, Haruki, Usuda, Osamu, Miura, Taiki, Ooishi, Masako, Omura, Ichiro, Kawaguchi, Yusuke, Matsushita, Kenichi, Koyanagawa, Takashi, Shimokawa, Kazuo
• Primary Examiner(s): Kebede; Brook
• Assistant Examiner(s): Tran; Tony
• Application Number:
  US11/214,730
• Publication Number:
  US 20060055432A1
• Time in Patent Office: 1,315 Days
• Field of Search: 257/723, 257/707, 257/706
• US Class Current: 257/706
• CPC Class Codes: H01L 21/565 Moulds
• CPC Class Codes: H01L 2224/0554 External layer
• CPC Class Codes: H01L 2224/0555 Shape
• CPC Class Codes: H01L 2224/0556 Disposition
• CPC Class Codes: H01L 2224/0557 the external layer being disposed on a via connection of the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/05571 the external layer being disposed in a recess of the surface
• CPC Class Codes: H01L 2224/05573 Single external layer
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/06131 being uniform, i.e. having a uniform pitch across the array
• CPC Class Codes: H01L 2224/16225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/371 with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 2224/37124 Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/37147 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/40225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/73153 Bump and layer connectors
• CPC Class Codes: H01L 2224/73204 the bump connector being embedded into the layer connector
• CPC Class Codes: H01L 2224/73253 Bump and layer connectors
• CPC Class Codes: H01L 2224/83801 Soldering or alloying
• CPC Class Codes: H01L 2224/84801 Soldering or alloying
• CPC Class Codes: H01L 23/3121 : a substrate forming part of the encapsulation
• CPC Class Codes: H01L 23/36 : Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks H01L23/28, H01L23/40, H01L23/42, H01L23/44, H01L23/46 take precedence; heating H01L23/345
• CPC Class Codes: H01L 23/367 : Cooling facilitated by shape of device H01L23/38, H01L23/40, H01L23/42, H01L23/44, H01L23/46 take precedence
• CPC Class Codes: H01L 23/4822 : Beam leads
• CPC Class Codes: H01L 23/49805 : the leads being also applied on the sidewalls or the bottom of the substrate, e.g. leadless packages for surface mounting
• CPC Class Codes: H01L 23/49844 : for devices being provided for in H01L29/00
• CPC Class Codes: H01L 24/16 : of an individual bump connector
• CPC Class Codes: H01L 24/37 : of an individual strap connector
• CPC Class Codes: H01L 24/40 : of an individual strap connector
• CPC Class Codes: H01L 24/41 : of a plurality of strap connectors
• CPC Class Codes: H01L 24/84 : using a strap connector
• CPC Class Codes: H01L 25/0655 : the devices being arranged next to each other
• CPC Class Codes: H01L 25/165 : Containers
• CPC Class Codes: H01L 29/4175 : for lateral devices where the connection to the source or drain region is done through at least one part of the semiconductor substrate thickness, e.g. with connecting sink or with via-hole
• CPC Class Codes: H01L 29/7802 : Vertical DMOS transistors, i.e. VDMOS transistors
• CPC Class Codes: H01L 29/7806 : the other device being a Schottky barrier diode
• CPC Class Codes: H01L 29/7809 : having both source and drain contacts on the same surface, i.e. Up-Drain VDMOS transistors
• CPC Class Codes: H01L 29/7813 : with trench gate electrode, e.g. UMOS transistors trench gate electrodes per se H01L29/4236
• CPC Class Codes: H01L 29/7835 : with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01015 : Phosphorus [P]
• CPC Class Codes: H01L 2924/01023 : Vanadium [V]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/0103 : Zinc [Zn]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/12032 : Schottky diode
• CPC Class Codes: H01L 2924/1306 : Field-effect transistor [FET]
• CPC Class Codes: H01L 2924/13091 : Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/19041 : being a capacitor
• CPC Class Codes: H01L 2924/19042 : being an inductor
• CPC Class Codes: H01L 2924/19105 : in a side-by-side arrangement on a common die mounting substrate
• CPC Class Codes: H01L 2924/30105 : Capacitance
• CPC Class Codes: H01L 2924/30107 : Inductance
• CPC Class Codes: H01L 2924/3011 : Impedance
• CPC Class Codes: H01L 2924/3025 : Electromagnetic shielding
• CPC Class Codes: H01L 2924/3511 : Warping

Abstract

A semiconductor module comprises a mounting board. A plurality of power switching device chips are mounted on the mounting board by flip-chip bonding. The chip has an upper surface and a lower surface and is configured to face the upper surface toward the mounting board. A drive IC chip is mounted on the mounting board by flip-chip bonding. The drive IC chip is operative to drive gates of transistors formed in the plurality of power switching device chips. A plurality of heat sink members are located on the lower surfaces of the plurality of power switching device chips, respectively. A resinous member is provided to seal the plurality of power switching device chips and the drive IC chip in a single package.

Claims

1. A semiconductor module, comprising:

a mounting board formed to be a rectangle in shape with four sides;

a plurality of power switching device chips each having an upper surface and a lower surface and mounted on said mounting board by flip-chip bonding with said upper surface faced toward said mounting board;

a drive IC chip mounted on said mounting board by flip-chip bonding and operation to drive gates of transistors formed in said plurality of power switching device chips;

a plurality of heat sink members located respectively on said lower surfaces of said plurality of power switching device chips;

a resinous member provided to seal said plurality of power switching device chips and said drive IC chip in a single package; and

a power source terminal and a ground terminal of a circuit configured by said plurality of power switching device chips,

wherein said power source terminal is located at one of two adjacent perpendicular sides of said rectangle, and said ground terminal is located at the other adjacent perpendicular side; and

wherein said heat sink member services as a wire that connects said power switching device and said mounting board; and

further comprising a decoupling condenser connected between said power source terminal and said ground terminal.

2. The semiconductor module according to claim 1, further comprising:

a built-in decoupling condenser connected between said power source terminal and said ground terminal.

3. The semiconductor module according to claim 2, wherein said mounting board includes a recess for embedding said decoupling condenser.

4. The semiconductor module according to claim 2,

wherein said drive IC chip includes a gate driver and a signal transmitter transmitting a signal from outside to said gate driver;

wherein said power source terminal includes a VDD terminal as a power source terminal of said drive IC chip; and

a VIN terminal as a power source terminal of a circuit configured by said plurality of power switching device chips;

wherein said ground terminal includes an IC-PGND terminal as a ground terminal of said gate driver, a SGND terminal as a ground terminal of said signal transmitter, and a PGND terminal as a ground terminal of a circuit configured by said plurality of power switching device chips; and

wherein said decoupling condenser includes a first decoupling condenser connected between said VDD terminal and said IC-PGND terminal, a second decoupling condenser connected between said VDD terminal and said SGND terminal, and a third decoupling condenser connected between said VIN terminal and said PGND terminal.

5. The semiconductor module according to claim 1,

wherein said mounting board is defined by sides, a surface facing said plurality of power switching device chips and said drive IC chips, and an opposite surface located opposite to the surface;

and

wherein said mounting board includes a wire formed at said opposite surface, a step corrective section formed at a region at said opposite surface corresponding to said chips and having the same thickness as said wire.

6. The semiconductor module according to claim 5, wherein said step corrective section is formed by expanding the width of said wire.

7. The semiconductor module according to claim 5, wherein said step corrective section comprises a dummy wire.

8. The semiconductor module according to claim 1, wherein said power source terminal is a VIN terminal of a circuit configured by said plurality of power switching device chips;

wherein at the opposite side of said VIN terminal at the mounting board is provided a VOUT terminal as an output terminal of the circuit configured by said plurality of power switching device chips;

wherein said plurality of heat sink members have respective terminals electrically connected to electrodes on said mounting board and are electrically connected to said lower surfaces of said plurality of power switching device chips; and

wherein said terminals are aligned in line along the direction from said VIN terminal to said VOUT terminal.

9. The semiconductor module according to claim 8, wherein at least one of said plurality of power switching device chips is rectangular in shape;

wherein a heat sink member corresponding to said rectangular chip has terminals electrically connected to electrodes on said mounting board and is electrically connected to said lower surface of said rectangular chip; and

wherein said rectangular chip has two opposite longer sides on which said terminals are arranged.

10. The semiconductor module according to claim 8, wherein at least one of said plurality of heat sink members has a plurality of portions fixed on said mounting board.

11. The semiconductor module according to claim 8, wherein said plurality of heat sink members include a heat sink member having a plurality of portions fixed on said mounting board and a heat sink member having a single portion fixed on said mounting board.

12. The semiconductor module according to claim 8, wherein said plurality of heat sink members have respective terminals electrically connected to electrodes on said mounting board and are electrically connected to said lower surfaces of said plurality of power switching device chips;

wherein said plurality of heat sink members include a heat sink member having two portions fixed on said mounting board; and

wherein said terminals of said heat-sink members are electrically connected to said electrodes on said mounting board at said two portions.

13. The method of protecting a recessed region according to claim 1 wherein said mounting board includes a recess for embedding said decoupling condenser.