Semiconductor device and manufacturing method thereof
First Claim
1. A semiconductor device comprising:
- a semiconductor layer on an insulating layer, the semiconductor layer surrounded by a device isolating layer;
a gate insulating film on the semiconductor layer;
a gate electrode having comb-like shape on the gate insulating film, the gate electrode including a base portion extending in a first direction and a plurality of tooth portions extending in a second direction from one side surface of the base portion;
a diffusion layer of first conductivity type having comb-like shape in the semiconductor layer under the gate electrode, the gate insulating film sandwiched between the diffusion layer and the gate electrode;
a source layer of second conductivity type and having high impurity concentration in the semiconductor layer on a tooth portion side of the base portion of the gate electrode, the second conductivity type opposite the first conductivity type;
a drain layer of the second conductivity type and having high impurity concentration in the semiconductor layer on a side of the base portion of the gate electrode opposite the tooth portion side,the first and second directions respectively corresponding to a gate width direction and a gate length direction of the gate electrode; and
an extraction layer of the first conductivity type in the semiconductor layer between the source layer and the device isolating layer, the extraction layer having a high impurity concentration greater than an impurity concentration of the diffusion layer and connected with the diffusion layer below the tooth portions of the gate electrode.
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Accused Products
Abstract
A device includes a semiconductor layer on an insulating layer; a gate insulator on the semiconductor layer; a comb-shaped gate electrode on the gate insulator, including a base portion extending in a first direction and tooth portions extending in a second direction from one side surface of the base portion; a comb-shaped low-concentration diffusion layer in the semiconductor layer under the gate electrode having a first electroconductive type; a source layer in the semiconductor layer on the tooth portion side of the base portion having second electroconductive type with high concentration; a drain layer in the semiconductor layer on a side of the base portion opposite the tooth portion side having second electroconductive type with high concentration; and an extraction layer in the semiconductor layer between the source and the device isolating layers having first electroconductive type with high concentration, and connected with the diffusion layer.
1 Citation
5 Claims
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1. A semiconductor device comprising:
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a semiconductor layer on an insulating layer, the semiconductor layer surrounded by a device isolating layer; a gate insulating film on the semiconductor layer; a gate electrode having comb-like shape on the gate insulating film, the gate electrode including a base portion extending in a first direction and a plurality of tooth portions extending in a second direction from one side surface of the base portion; a diffusion layer of first conductivity type having comb-like shape in the semiconductor layer under the gate electrode, the gate insulating film sandwiched between the diffusion layer and the gate electrode; a source layer of second conductivity type and having high impurity concentration in the semiconductor layer on a tooth portion side of the base portion of the gate electrode, the second conductivity type opposite the first conductivity type; a drain layer of the second conductivity type and having high impurity concentration in the semiconductor layer on a side of the base portion of the gate electrode opposite the tooth portion side, the first and second directions respectively corresponding to a gate width direction and a gate length direction of the gate electrode; and an extraction layer of the first conductivity type in the semiconductor layer between the source layer and the device isolating layer, the extraction layer having a high impurity concentration greater than an impurity concentration of the diffusion layer and connected with the diffusion layer below the tooth portions of the gate electrode. - View Dependent Claims (2, 3, 4, 5)
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Specification