Sensor and image pickup device

• US 7,535,010 B2
• Filed: 11/08/2007
• Issued: 05/19/2009
• Est. Priority Date: 11/10/2004
• Status: Active Grant

• Current Assignee: Canon Kabushiki Kaisha (Canon Inc.), Japan Science & Technology Trading Co. Limited, Tokyo Institute of Technology (National University Corporation Tokyo Institute of Technology)
• Original Assignee: Canon Kabushiki Kaisha (Canon Inc.), Tokyo Institute of Technology (National University Corporation Tokyo Institute of Technology)
• Inventors: Kamiya, Toshio, Nomura, Kenji, Hosono, Hideo, Saito, Keishi
• Primary Examiner(s): Porta; David P
• Assistant Examiner(s): Gaworecki; Mark R
• Application Number:
  US11/937,259
• Publication Number:
  US 20080251729A1
• Time in Patent Office: 558 Days
• Field of Search: 250/370.09, 250/370.11
• US Class Current: 250/370.09
• CPC Class Codes: H01L 27/14601 Structural or functional details thereof
• CPC Class Codes: H01L 27/14632 Wafer-level processed structures
• CPC Class Codes: H01L 27/14658 X-ray, gamma-ray or corpuscular radiation imagers measuring X-, gamma- or corpuscular radiation G01T1/00
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H01L 31/02322 comprising luminescent members, e.g. fluorescent sheets upon the device
• CPC Class Codes: H01L 31/032 including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
• CPC Class Codes: H01L 31/085 the device being sensitive to very short wavelength, e.g. X-ray, Gamma-rays
• CPC Class Codes: H01L 31/09 Devices sensitive to infrared, visible or ultraviolet radiation H01L31/101 takes precedence
• CPC Class Codes: H01L 31/118 of the surface barrier or shallow PN junction detector type, e.g. surface barrier alpha-particle detectors

Abstract

A sensor for detecting a received electromagnetic wave comprising a first electrode, a second electrode and an amorphous oxide layer interposed between the first electrode and the second electrode.

Claims

1. A sensor for detecting a received electromagnetic wave, comprising:

a first electrode;

a second electrode; and

an amorphous oxide layer interposed between the first electrode and the second electrode, wherein the amorphous oxide layer comprises an oxide selected from the group consisting of an oxide containing In, Zn and Sn, an oxide containing In and Zn, an oxide containing In and Sn, and an oxide containing In.

2. A sensor for detecting a received electromagnetic wave, comprising:

a first electrode;

a second electrode; and

an amorphous oxide layer interposed between the first electrode and the second electrode, wherein the amorphous oxide layer has an electron carrier concentration of less than 10¹⁸/cm³.

3. A sensor for detecting a received electromagnetic wave, comprising:

a first electrode;

a second electrode; and

an amorphous oxide layer interposed between the first electrode and the second electrode, wherein the amorphous oxide layer contains In, Ga, and Zn.

4. A sensor for detecting a received electromagnetic wave, comprising:

a first electrode;

a second electrode; and

an amorphous oxide layer interposed between the first electrode and the second electrode,

wherein the amorphous oxide layer comprises an amorphous oxide whose electron mobility tends to increase with increasing electron carrier concentration.