Radiation image detector

• US 7,557,354 B2
• Filed: 10/12/2007
• Issued: 07/07/2009
• Est. Priority Date: 10/12/2006
• Status: Active Grant

• Current Assignee: Fujifilm Corporation (Fujifilm Holdings Corporation)
• Original Assignee: Fujifilm Corporation (Fujifilm Holdings Corporation)
• Inventors: Okada, Yoshihiro
• Primary Examiner(s): Porta; David P
• Assistant Examiner(s): Gaworecki; Mark R
• Application Number:
  US11/871,229
• Publication Number:
  US 20080087834A1
• Time in Patent Office: 634 Days
• Field of Search: 250/370.08, 250/370.09, 250/370.11
• US Class Current: 250/370.08
• CPC Class Codes: G01T 1/247 Detector read-out circuitry for processing gain or off-set correction H04N

Abstract

A radiation image detector including: a plurality of image sensing sections, disposed on a substrate in an array, for converting radiation to electrical signals; a plurality of data lines for transferring electrical signals converted by the image sensing sections; a charge amplifier circuit for integrating electrical signals transferred by the data lines; and a selector circuit for connecting a plurality of data lines to the charge amplifier circuit by sequentially switching the data lines.

Claims

1. A radiation image detector, comprising:

a plurality of image sensing sections, disposed on a substrate in an array, for converting radiation to electrical signals;

a plurality of data lines for transferring the electrical signals converted by the image sensing sections;

a charge amplifier circuit for integrating the electrical signals converted by the image sensing sections and transferred by the data lines; and

a selector circuit for sequentially switching the plurality of data lines to connect the plurality of data lines to the charge amplifier circuit.

2. The radiation image detector of claim 1, wherein the selector circuit is formed on an IC chip and the IC chip is mounted on the substrate.

3. The radiation image detector of claim 2, wherein the charge amplifier circuit is formed on a second IC chip that is different from the first IC chip.

4. The radiation image detector of claim 1, wherein the selector circuit is formed on a first IC chip and the charge amplifier circuit is formed on a second IC chip that is different from the first IC chip.

5. The radiation image detector of claim 1, wherein the charge amplifier circuit first integrates the electrical signals converted by the image sensing sections.