Process and structure for fabrication of MEMS device having isolated edge posts

• US 7,561,321 B2
• Filed: 12/19/2007
• Issued: 07/14/2009
• Est. Priority Date: 06/01/2006
• Status: Expired due to Fees

• Current Assignee: Snaptrack Incorporated (Qualcomm, Inc.)
• Original Assignee: Qualcomm MEMS Technologies Incorporated (Qualcomm, Inc.)
• Inventors: Heald, David
• Primary Examiner(s): Choi; William C
• Application Number:
  US11/960,602
• Publication Number:
  US 20080094687A1
• Time in Patent Office: 573 Days
• Field of Search: 359/198, 359/212, 359/230, 359/231, 359/290, 359/291, 359/295
• US Class Current: 359/290
• CPC Class Codes: G02B 26/001 based on interference in an adjustable optical cavity interference filters G02B5/28; devices or arrangements using multiple reflections in spectrometry or monochromators G01J3/26

Abstract

A method of fabricating an array of MEMS devices includes the formation of support structures located at the edge of upper strip electrodes. A support structure is etched to form a pair of individual support structures located at the edges of a pair of adjacent electrodes. The electrodes themselves may be used as a hard mask during the etching of these support structures. A resultant array of MEMS devices includes support structures having a face located at the edge of an overlying electrode and coincident with the edge of the overlying electrode.

Claims

1. An apparatus comprising an array of MEMS devices, the array comprising:

a plurality of lower electrodes located over a substrate;

a plurality of upper strip electrodes spaced apart from the plurality of lower electrodes by a cavity, the upper strip electrodes separated by gaps;

a plurality of isolated edge posts located between the upper strip electrodes and the lower electrodes, wherein the isolated edge posts comprise a face extending along the edge of the isolated edge posts facing an adjacent gap; and

a reflective layer located under the plurality of upper strip electrodes on the same side of the cavity as the upper strip electrodes, wherein the reflective layer extends underneath at least a portion of the isolated edge posts.

2. The apparatus of claim 1, wherein said face is coincident with the edge of the upper strip electrode overlying the isolated edge posts.

3. The apparatus of claim 1, further comprising at least one pair of isolated edge posts, wherein a first isolated edge post is located underneath a first upper strip electrode, and wherein a second isolated edge post is located underneath a second upper strip electrode adjacent to the first upper strip electrode, wherein the pair of isolated edge posts are formed by etching a single support structure.

4. The apparatus of claim 1, wherein the isolated edge posts additionally comprise a substantially horizontal wing portion along the edges of the isolated edge post not facing the adjacent gap between upper strip electrodes, wherein the substantially horizontal wing portion is spaced apart from the substrate by the cavity and extends substantially parallel to the substrate.

5. The apparatus of claim 4, wherein the isolated edge posts comprise a substantially flat base portion in contact with underlying layers on the substrate, and a sloped side portion extending away from the substrate toward the wing portion.

6. The apparatus of claim 1, wherein the face extending along the edge of the isolated edge post facing the adjacent gap between upper strip electrodes comprises a substantially vertical face.

7. The apparatus of claim 1, wherein the plurality of upper strip electrodes comprises nickel.

8. The apparatus of claim 1, wherein the plurality of lower electrodes comprises indium tin oxide.

9. The apparatus of claim 1, wherein the isolated edge posts comprise a material selected from the group of:

SiO₂ and SiN_x.

10. The apparatus of claim 1, additionally comprising a dielectric layer located over the lower electrodes on the same side of the cavity as the electrode.

11. The apparatus of claim 10, wherein the dielectric layer comprises a material selected from the group of:

SiO₂ and SiN_x.

12. The apparatus of claim 1, additionally comprising a partially reflective layer located over the plurality of lower electrodes on the same side of the cavity as the lower electrodes.

13. The apparatus of claim 12, wherein the partially reflective layer comprises chromium.

14. The apparatus of claim 1, wherein the reflective layer comprises a material selected from the group of:

aluminum, silver, gold, copper, palladium, platinum, and rhodium.

15. The apparatus of claim 1, additionally comprising

a processor that is configured to communicate with at least one of said upper and lower electrodes, said processor being configured to process image data;

and

a memory device that is configured to communicate with said processor.

16. The apparatus of claim 15, further comprising a driver circuit configured to send at least one signal to at least one of said upper and lower electrodes.

17. The apparatus of claim 16, further comprising a controller configured to send at least a portion of the image data to the driver circuit.

18. The apparatus of claim 15, further comprising an image source module configured to send said image data to said processor.

19. The apparatus of claim 18, wherein the image source module comprises at least one of a receiver, transceiver, and transmitter.

20. The apparatus of claim 15, further comprising an input device configured to receive input data and to communicate said input data to said processor.

21. A MIEMS device, comprising:

first means for electrically conducting;

second means for electrically conducting;

adjacent second means for electrically conducting; and

supporting means for supporting edge portions of and for electrically isolating said second conducting means from said adjacent second conducting means wherein said second conducting means is electrically isolated from said first conducting means, and wherein said second conducting means is movable relative to said first conducting means in response to generating electrostatic potential between said first and second conducting means, and wherein said supporting means extends over and contacts at least a portion of said second conducting means, wherein the portion comprises a conductive material.

22. The MEMS device of claim 21, wherein:

said first conducing means comprise a plurality of lower electrodes supported by a substrate;

said second conducting means and said adjacent second conducting means comprise a plurality of upper strip electrodes supported by a substrate, and spaced apart from one another by gaps, wherein the upper strip electrodes are electrically isolated from the lower electrodes, and wherein said upper strip electrodes comprise a conductive sublayer and a mechanical sublayer located over said conductive sublayer; and

said supporting means comprise a plurality of isolated edge posts located between the upper strip electrodes and the lower electrodes, wherein the isolated edge posts comprise a face extending along the edge of the isolated edge posts facing an adjacent gap, wherein said face is coincident with the edge of the upper strip electrode overlying the isolated edge posts, wherein the conductive sublayer extends underneath at least a portion of the edge posts, and wherein the mechanical sublayer extends over at least a portion of the edge posts.

23. The MEMS device of claim 22, wherein said plurality of isolated edge posts comprise at least one pair of isolated edge posts, wherein a first isolated edge post is located underneath a first upper strip electrode, and wherein a second isolated edge post is located underneath a second upper strip electrode adjacent to the first upper strip electrode, wherein the pair of isolated edge posts are formed by etching a single support structure.

24. An apparatus comprising an array of MEMS devices, the array comprising:

a plurality of lower electrodes located over a substrate;

a plurality of upper strip electrodes spaced apart from the plurality of lower electrodes by a cavity, the upper strip electrodes separated by gaps, wherein the plurality of upper strip electrodes comprise nickel;

a plurality of isolated edge posts located between the upper strip electrodes and the lower electrodes, wherein the isolated edge posts comprise a face extending along the edge of the isolated edge posts facing an adjacent gap.

25. An apparatus comprising an array of MEMS devices, the array comprising:

a plurality of lower electrodes located over a substrate;

a plurality of upper strip electrodes spaced apart from the plurality of lower electrodes by a cavity, the upper strip electrodes separated by gaps;

a plurality of isolated edge posts located between the upper strip electrodes and the lower electrodes, wherein the isolated edge posts comprise a face extending along the edge of the isolated edge posts facing an adjacent gap, and wherein the isolated edge posts comprise a material selected from the group of;

SiO₂ and SiN_x.