Semiconductor device and its manufacturing method

  • US 7,564,102 B2
  • Filed: 03/07/2003
  • Issued: 07/21/2009
  • Est. Priority Date: 03/15/2002
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising an N-channel metal-insulator-semiconductor field-effect transistor and a P-channel metal-insulator-semiconductor field-effect transistor, characterized in that said N-channel metal-insulator-semiconductor field-effect transistor includes a gate electrode made of a metal, alloy or metal nitride film doped with oxygen or fluorine, and that said P-channel metal-insulator-semiconductor field-effect transistor includes a gate electrode formed in a common layer with said gate electrode of said N-channel metal-insulator-semiconductor field-effect transistor and made from a portion of said common layer doped with oxygen or fluorine more heavily than said gate electrode of said N-channel metal-insulator-semiconductor field-effect transistor.

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