Deep diffused thin photodiodes
First Claim
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1. A photodiode comprising:
- a substrate with at least a front side and a back side;
a passivation layer proximate to the front side;
an active high resistivity layer proximate to said passivation layer comprising at least five regions of alternating conductivity type;
an n+ deep drive in layer proximate to the active high resistivity layer;
an anti-reflective layer proximate to said n+ deep drive in layer; and
a plurality of contact electrodes in electrical communication with each of said five regions of alternating conductivity type;
wherein the five regions of alternating conductivity type comprises a first n+ region adjacent to a first deep diffused p+ region adjacent to a second n+ region adjacent to a second deep diffused p+ region adjacent to a third n+ region and wherein the five regions of alternating conductivity type comprise a thickness of approximately 40 μ
m.
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Abstract
This invention comprises photodiodes, optionally organized in the form of an array, including p+ deep diffused regions or p+ and n+ deep diffused regions. More specifically, the invention permits one to fabricate thin 4 inch and 6 inch wafer using the physical support provided by a n+ deep diffused layer and/or p+ deep diffused layer. Consequently, the present invention delivers high device performances, such as low crosstalk, low radiation damage, high speed, low leakage dark current, and high speed, using a thin active layer.
117 Citations
6 Claims
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1. A photodiode comprising:
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a substrate with at least a front side and a back side; a passivation layer proximate to the front side; an active high resistivity layer proximate to said passivation layer comprising at least five regions of alternating conductivity type; an n+ deep drive in layer proximate to the active high resistivity layer; an anti-reflective layer proximate to said n+ deep drive in layer; and a plurality of contact electrodes in electrical communication with each of said five regions of alternating conductivity type; wherein the five regions of alternating conductivity type comprises a first n+ region adjacent to a first deep diffused p+ region adjacent to a second n+ region adjacent to a second deep diffused p+ region adjacent to a third n+ region and wherein the five regions of alternating conductivity type comprise a thickness of approximately 40 μ
m. - View Dependent Claims (2)
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3. A photodiode comprising:
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a substrate with at least a front side and a back side; a passivation layer proximate to the front side; an active high resistivity layer proximate to said passivation layer comprising at least five regions of alternating conductivity type; an n+ deep drive in layer proximate to the active high resistivity layer; an anti-reflective layer proximate to said n+ deep drive in layer; and a plurality of contact electrodes in electrical communication with each of said five regions of alternating conductivity type; wherein the five regions of alternating conductivity type comprises a first deep diffused n+ region adjacent to a first deep diffused p+ region adjacent to a second deep diffused n+ region adjacent to a second deep diffused p+ region adjacent to a third deep diffused n+ region and wherein the five regions of alternating conductivity type comprise a thickness of approximately 140 μ
m to 200 μ
m. - View Dependent Claims (4, 5, 6)
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Specification